Wafer-Level Defect-Based Testing Using Enhanced Voltage Stress and Statistical Test Data Evaluation

I
ITC
2002
International Test Conference 2002 (ITC'02)
Abstract - Wafer-Level Defect-Based Testing Using Enhanced Voltage Stress and Statistical Test Data Evaluation

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International Test Conference 2002 (ITC'02)

Baltimore, MD, USA

October 07-October 10

ISBN: 0-7803-7543-2

	ASCII Text	x
	Minh Quach, Tuan Pham, Tim Figal, Bob Kopitzke, Pete O?Neill, "Wafer-Level Defect-Based Testing Using Enhanced Voltage Stress and Statistical Test Data Evaluation," Test Conference, International, pp. 683, International Test Conference 2002 (ITC'02), 2002.

	BibTex	x
	@article{ 10.1109/TEST.2002.1041820, author = {Minh Quach and Tuan Pham and Tim Figal and Bob Kopitzke and Pete O?Neill}, title = {Wafer-Level Defect-Based Testing Using Enhanced Voltage Stress and Statistical Test Data Evaluation}, journal ={Test Conference, International}, volume = {0}, year = {2002}, isbn = {0-7803-7543-2}, pages = {683}, doi = {http://doi.ieeecomputersociety.org/10.1109/TEST.2002.1041820}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Test Conference, International TI - Wafer-Level Defect-Based Testing Using Enhanced Voltage Stress and Statistical Test Data Evaluation SN - 0-7803-7543-2 SP EP A1 - Minh Quach, A1 - Tuan Pham, A1 - Tim Figal, A1 - Bob Kopitzke, A1 - Pete O?Neill, PY - 2002 KW - null VL - 0 JA - Test Conference, International ER -

Minh Quach, Agilent Technologies Company

Tuan Pham, Agilent Technologies Company

Tim Figal, Agilent Technologies Company

Bob Kopitzke, Agilent Technologies Company

Pete O?Neill, Agilent Technologies Company

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/TEST.2002.1041820

In this paper, we illustrate the effectiveness of wafer-level Enhanced Voltage Stress (EVS) along with Low Voltage Sweep (LVS), IDDQ and other parametric tests to screen early life failure defects. Our experiment shows temporary undetected defects after repeated exposure to certain applied voltages. We demonstrate a statistical methodology to screen die with suspected early life failure defects.

Citation:

Minh Quach, Tuan Pham, Tim Figal, Bob Kopitzke, Pete O?Neill, "Wafer-Level Defect-Based Testing Using Enhanced Voltage Stress and Statistical Test Data Evaluation," itc, pp.683, International Test Conference 2002 (ITC'02), 2002

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