A contact method between IC pads and probes at low contact force is a key to develop a probe card with over ten thousand probes and MEMS probe cards. In this paper, we have investigated the characteristics of new low-force contact methods on Cu electrodes in addition to Al electrodes. One method is to use an electric breakdown by applying voltage to the electrodes, and another one is to deoxidize the native oxide on the surface of Cu electrode before probing. A conventional needle probe card of tungsten probes were used for the experiment. At contact force of 1 mN, contact resistances of less than 2 Ω were obtained by the deoxidization process, and 0.7 Ω were obtained in combination of both the oxidization and the electric breakdown by applying 10 V.
Citation:
Kenichi Kataoka, Toshihiro Itoh, Katsuya Okumura, Tadatomo Suga, "Low-Contact-Force Probing on Copper Electrodes," itc, pp.424, International Test Conference 2002 (ITC'02), 2002