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IEEE Computer Society Annual Symposium on VLSI: Emerging Trends in VLSI Systems Design (ISVLSI'04)
New Bulk Dynamic Threshold NMOS Schemes for Low-Energy Subthreshold Domino-Like Circuits
Lafayette, Louisiana
February 19-February 20
ISBN: 0-7695-2097-9
Walid Elgharbawy, University of Louisiana at Lafayette
Magdy Bayoumi, University of Louisiana at Lafayette
Dynamic threshold MOS circuits offer speed and energy saving advantages over the conventional subthreshold CMOS circuits; they are faster and consume less energy. In this paper a new Bulk Dynamic Threshold MOS scheme for NMOS transistors (B-DTNMOS) in Domino-like dynamic circuits is introduced. In this scheme the substrate of all the NMOS transistors is connected to the clock signal in dynamic circuits. The proposed scheme is shown to be 63% faster and has 37.2% energy savings compared to the regular subthreshold CMOS circuits.
Citation:
Walid Elgharbawy, Magdy Bayoumi, "New Bulk Dynamic Threshold NMOS Schemes for Low-Energy Subthreshold Domino-Like Circuits," isvlsi, pp.115, IEEE Computer Society Annual Symposium on VLSI: Emerging Trends in VLSI Systems Design (ISVLSI'04), 2004
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