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IEEE Computer Society Annual Symposium on VLSI (ISVLSI'03)
Dual Threshold Voltage Circuits in the Presence of Resistive Interconnects
Tampa, Florida
February 20-February 21
ISBN: 0-7695-1904-0
Per Larsson-Edefors, Chalmers University of Technology
Daniel Eckerbert, Chalmers University of Technology
Henrik Eriksson, Chalmers University of Technology
Lars "J" Svensson, Chalmers University of Technology
We consider the power-optimal design of dual-VT CMOS circuits under challenging delay constraints, with threshold voltages and device sizes as design variables. We show that the presence of interconnect resistance affects the optimum choices of VT and device sizes, and that ignoring the resistance can lead to highly suboptimal results. We also present criteria for deciding when interconnect resistance should be taken into account.
Citation:
Per Larsson-Edefors, Daniel Eckerbert, Henrik Eriksson, Lars "J" Svensson, "Dual Threshold Voltage Circuits in the Presence of Resistive Interconnects," isvlsi, pp.225, IEEE Computer Society Annual Symposium on VLSI (ISVLSI'03), 2003
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