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IEEE Computer Society Annual Symposium on VLSI (ISVLSI'03)
Novel Circuit Styles for Minimization of Floating Body Effects in Scaled PD-SOI CMOS
Tampa, Florida
February 20-February 21
ISBN: 0-7695-1904-0
Koushik K. Das, University of Michigan
Richard B. Brown, University of Michigan
SOI (silicon-on-insulator)technology suffers from a number of floating body effects,most notably parasitic bipolar and history effects.These are influenced by the rapidly increasing gate tunneling current caused by an ultra-thin gate oxide,even at scaled VDs [8 ].This paper analyzes these effects in detail and proposes a number of novel circuit styles to minimize them.Simulation results are based on model parameters from an AMD 0.25 ?m PD-SOI process.
Citation:
Koushik K. Das, Richard B. Brown, "Novel Circuit Styles for Minimization of Floating Body Effects in Scaled PD-SOI CMOS," isvlsi, pp.29, IEEE Computer Society Annual Symposium on VLSI (ISVLSI'03), 2003
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