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5th International Symposium on Quality Electronic Design (ISQED'04)
A Comprehensive Analytical Capacitance Model of a Two Dimensional Nanodot Array
San Jose, California
March 22-March 24
ISBN: 0-7695-2093-6
Anirban Basu, University of California at Santa Barbara
Sheng-Chih Lin, University of California at Santa Barbara
Christoph Wasshuber, Texas Instruments
Adrian M. Ionescu, Swiss Federal Institute of Technology
Kaustav Banerjee, University of California at Santa Barbara
This paper introduces a new comprehensive analytical capacitance model for nanoscale architectures based on nanoscale metallic/semiconducting dots. The model takes into account a detailed charge interaction of the components and shows their implications on power and performance with reference to a nanoscale cellular neural network (CNN) without any loss of generality. Our proposed model, as opposed to a numerical simulator, provides an analytical technique to perform a quick but an accurate estimate of the functional capacitances and thereby evaluate some key performance parameters such as switching delay, power dissipation and energy-delay product of a CNN, or in general a nanodot based circuit. Moreover, this model can be used as a guideline to determine the boundary of transition from continuous charge to discrete charge regimes in nanodot based electronic implementations.
Citation:
Anirban Basu, Sheng-Chih Lin, Christoph Wasshuber, Adrian M. Ionescu, Kaustav Banerjee, "A Comprehensive Analytical Capacitance Model of a Two Dimensional Nanodot Array," isqed, pp.259-264, 5th International Symposium on Quality Electronic Design (ISQED'04), 2004
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