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International Symposium on Quality Electronic Design (ISQED '01)
Analysis and Design of ESD Protection Circuits for High-Frequency/RF Applications
San Jose, California
March 26-March 28
ISBN: 0-7695-1025-6
Choshu Ito, Stanford University
Kaustav Banerjee, Stanford University
Robert W. Dutton, Stanford University
Electrostatic discharge (ESD) protection devices can have an adverse effect on the performance of high frequency and RF circuits. This work presents for the first time, an s-parameter based analysis of the performance of RF circuits with various ESD protection designs. Additionally, a design methodology for distributed ESD protection using coplanar waveguides is developed to achieve a better impedance match over a broad frequency range. By using this technique, an ESD device with a parasitic capacitance of 200 fF will attenuate the signal power by only 0.27 dB at 10 GHz.
Citation:
Choshu Ito, Kaustav Banerjee, Robert W. Dutton, "Analysis and Design of ESD Protection Circuits for High-Frequency/RF Applications," isqed, pp.117, International Symposium on Quality Electronic Design (ISQED '01), 2001
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