International Symposium on Quality Electronic Design (ISQED '01)
Analysis and Design of ESD Protection Circuits for High-Frequency/RF Applications
San Jose, California
March 26-March 28
ISBN: 0-7695-1025-6
Electrostatic discharge (ESD) protection devices can have an adverse effect on the performance of high frequency and RF circuits. This work presents for the first time, an s-parameter based analysis of the performance of RF circuits with various ESD protection designs. Additionally, a design methodology for distributed ESD protection using coplanar waveguides is developed to achieve a better impedance match over a broad frequency range. By using this technique, an ESD device with a parasitic capacitance of 200 fF will attenuate the signal power by only 0.27 dB at 10 GHz.
Citation:
Choshu Ito, Kaustav Banerjee, Robert W. Dutton, "Analysis and Design of ESD Protection Circuits for High-Frequency/RF Applications," isqed, pp.117, International Symposium on Quality Electronic Design (ISQED '01), 2001