A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices

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34th International Symposium on Multiple-Valued Logic (ISMVL'04)

University of Toronto, Toronto, Canada

May 19-May 22

ISBN: 0-7695-2130-4

	ASCII Text	x
	Hiromitsu Kimura, Kostas Pagiamtzis, Ali Sheikholeslami, Takahiro Hanyu, "A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices," Multiple-Valued Logic, IEEE International Symposium on, pp. 340-345, 34th International Symposium on Multiple-Valued Logic (ISMVL'04), 2004.

	BibTex	x
	@article{ 10.1109/ISMVL.2004.1319965, author = {Hiromitsu Kimura and Kostas Pagiamtzis and Ali Sheikholeslami and Takahiro Hanyu}, title = {A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices}, journal ={Multiple-Valued Logic, IEEE International Symposium on}, volume = {0}, year = {2004}, issn = {0195-623X}, pages = {340-345}, doi = {http://doi.ieeecomputersociety.org/10.1109/ISMVL.2004.1319965}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Multiple-Valued Logic, IEEE International Symposium on TI - A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices SN - 0195-623X SP340 EP345 A1 - Hiromitsu Kimura, A1 - Kostas Pagiamtzis, A1 - Ali Sheikholeslami, A1 - Takahiro Hanyu, PY - 2004 KW - null VL - 0 JA - Multiple-Valued Logic, IEEE International Symposium on ER -

Hiromitsu Kimura, Tohoku University

Kostas Pagiamtzis, University of Toronto

Ali Sheikholeslami, University of Toronto

Takahiro Hanyu, Tohoku University

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISMVL.2004.1319965

This paper presents four-valued magnetoresistive RAM (MRAM) storage cells using one access transistor and two binary magnetic tunnel junction (MTJ) devices with the MTJ devices either in series or in parallel. We present a comparative study of the two cells in terms of their area and power benefits over the binary MRAM, all using the same conventional MRAM process.

Citation:

Hiromitsu Kimura, Kostas Pagiamtzis, Ali Sheikholeslami, Takahiro Hanyu, "A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices," ismvl, pp.340-345, 34th International Symposium on Multiple-Valued Logic (ISMVL'04), 2004

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