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2003 International Conference on MEMS, NANO and Smart Systems (ICMENS'03)
MEMS Spring Probe for Next Generation Wafer Level Testing
Banff, Alberta, Canada
July 20-July 23
ISBN: 0-7695-1947-4
Kee-Keun Lee, Arizona State University
Bruce C. Kim, Arizona State University
MEMS spring probe was fabricated for a nondestructive contact and testing of ultra small pitch devices. The probes have high suspension from the bottom planar surface, high elastic spring constant, and low interface contact resistivity. All contacts take place simultaneously. The contact interface area of the fabricated probe was 70?m2. Low RF signal loss was observed from RF testing. Measured S11 parameter was approximately -50dB and S21 was -0.5dB up to 30GHz. The total resistance of the probe was 2 ohms and the inductance and capacitance were negligible.
Citation:
Kee-Keun Lee, Bruce C. Kim, "MEMS Spring Probe for Next Generation Wafer Level Testing," icmens, pp.214, 2003 International Conference on MEMS, NANO and Smart Systems (ICMENS'03), 2003
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