loading...
 This Article 
   
 Share 
   
 Bibliographic References 
   
 Add to: 
 
Digg
Furl
Spurl
Blink
Simpy
Google
Del.icio.us
Y!MyWeb
 
 Search 
   
Ninth Great Lakes Symposium on VLSI
Transport in Split Gate MOS Quantum Dot Structures
Ann Arbor, Michigan
March 04-March 06
ISBN: 0-7695-0104-4
ASCII Text
x 
 
S.M. Goodnick, J. Bird, D.K. Ferry, A.D. Gunther, M.D. Khoury, M. Kozicki, M.J. Rack, T.J. Thornton, D. Vasileska-Kafedezka, "Transport in Split Gate MOS Quantum Dot Structures," Great Lakes Symposium on VLSI, pp. 394, Ninth Great Lakes Symposium on VLSI, 1999.
 
 
BibTex
x
 
@article{ 10.1109/GLSV.1999.757466,
author = {S.M. Goodnick and J. Bird and D.K. Ferry and A.D. Gunther and M.D. Khoury and M. Kozicki and M.J. Rack and T.J. Thornton and D. Vasileska-Kafedezka},
title = {Transport in Split Gate MOS Quantum Dot Structures},
journal ={Great Lakes Symposium on VLSI},
volume = {0},
year = {1999},
issn = {1066-1395},
pages = {394},
doi = {http://doi.ieeecomputersociety.org/10.1109/GLSV.1999.757466},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Great Lakes Symposium on VLSI
TI - Transport in Split Gate MOS Quantum Dot Structures
SN - 1066-1395
SP
EP
A1 - S.M. Goodnick,
A1 - J. Bird,
A1 - D.K. Ferry,
A1 - A.D. Gunther,
A1 - M.D. Khoury,
A1 - M. Kozicki,
A1 - M.J. Rack,
A1 - T.J. Thornton,
A1 - D. Vasileska-Kafedezka,
PY - 1999
VL - 0
JA - Great Lakes Symposium on VLSI
ER -
 
S.M. Goodnick, Arizona State University,
J. Bird, Arizona State University,
D.K. Ferry, Arizona State University,
A.D. Gunther, Arizona State University,
M.D. Khoury, Arizona State University,
M. Kozicki, Arizona State University,
M.J. Rack, Arizona State University,
T.J. Thornton, Arizona State University,
D. Vasileska-Kafedezka, Arizona State University,
A novel technique has been developed for the fabrication of Si quantum dot structures with controllable electron number through both top and side gates. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, and controlling the input and output barriers of the dot with the side gates, conductance peaks are observed which map details of the energy level within the dot as well as the interaction of the electrons with one another.
Citation:
S.M. Goodnick, J. Bird, D.K. Ferry, A.D. Gunther, M.D. Khoury, M. Kozicki, M.J. Rack, T.J. Thornton, D. Vasileska-Kafedezka, "Transport in Split Gate MOS Quantum Dot Structures," glsvlsi, pp.394, Ninth Great Lakes Symposium on VLSI, 1999
Usage of this product signifies your acceptance of the Terms of Use.