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Ninth Great Lakes Symposium on VLSI
Resonant Tunneling Transistors for Threshold Logic Circuit Applications
Ann Arbor, Michigan
March 04-March 06
ISBN: 0-7695-0104-4
C. Pacha, Universit?t Dortmund
P. Glösekötter, Universit?t Dortmund
K. Goser, Universit?t Dortmund
U. Auer, Universit?t Duisburg
W. Prost, Universit?t Duisburg
F.-J. Tegude, Universit?t Duisburg
Resonant tunneling transistors (RTT's) and linear threshold gates based on monostable-bistable logic transition elements (MOBILE's) are promising candidates for nano-scale integrated circuits. In this paper the design methodology of RTT logic gates is discussed and experimental results of a monolithically integrated NAND-NOR gate are presented. To exploit the computational functionality of threshold logic circuits a depth-2 full adder and a bit-level pipelined ripple carry adder are proposed.
Citation:
C. Pacha, P. Glösekötter, K. Goser, U. Auer, W. Prost, F.-J. Tegude, "Resonant Tunneling Transistors for Threshold Logic Circuit Applications," glsvlsi, pp.344, Ninth Great Lakes Symposium on VLSI, 1999
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