Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications

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	Similar Articles Articles by P. Fay Articles by G.H. Bernstein Articles by D. Chow Articles by J. Schulman Articles by P. Mazumder Articles by W. Williamson Articles by B. Gilbert

Ninth Great Lakes Symposium on VLSI

Ann Arbor, Michigan

March 04-March 06

ISBN: 0-7695-0104-4

	ASCII Text	x
	P. Fay, G.H. Bernstein, D. Chow, J. Schulman, P. Mazumder, W. Williamson, B. Gilbert, "Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications," Great Lakes Symposium on VLSI, pp. 162, Ninth Great Lakes Symposium on VLSI, 1999.

	BibTex	x
	@article{ 10.1109/GLSV.1999.757401, author = {P. Fay and G.H. Bernstein and D. Chow and J. Schulman and P. Mazumder and W. Williamson and B. Gilbert}, title = {Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications}, journal ={Great Lakes Symposium on VLSI}, volume = {0}, year = {1999}, issn = {1066-1395}, pages = {162}, doi = {http://doi.ieeecomputersociety.org/10.1109/GLSV.1999.757401}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Great Lakes Symposium on VLSI TI - Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications SN - 1066-1395 SP EP A1 - P. Fay, A1 - G.H. Bernstein, A1 - D. Chow, A1 - J. Schulman, A1 - P. Mazumder, A1 - W. Williamson, A1 - B. Gilbert, PY - 1999 KW - resonant tunneling diode (RTD) KW - resonant interband tunneling diode (RITD) KW - heterostructure field-effect transistor (HFET) KW - ultra-high-speed logic circuits VL - 0 JA - Great Lakes Symposium on VLSI ER -

P. Fay, University of Notre Dame

G.H. Bernstein, University of Notre Dame

D. Chow, HRL Laboratories

J. Schulman, HRL Laboratories

P. Mazumder, University of Michigan

W. Williamson, Institute for Defense Analysis

B. Gilbert, Mayo Foundation

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/GLSV.1999.757401

Resonant tunnelling diode based logic circuits offer significant advantages for low power, ultra-high-speed applications. In this work, a low-power resonant interband tunneling diode (RITD)-based logic technology capable of operating at clock rates of at least 12 GHz is reported. The circuits are fabricated using InAs/AlSb/ GaSb RITDs. Fanout of at least two at a clock rate of 10 GHz is also reported for two AND gates in a two-stage pipelined configuration. Simulation results for an RITD/ HFET circuit based on measured characteristics of InAs/ AlSb/GaSb RITDs and InAs-channel HFETs for a simple inverting Schmitt trigger are presented to demonstrate the advantages of an integrated RITD/HFET technology. This circuit architecture demonstrates proper operation with power supply voltages as low as 0.5 V. In addition, well defined logic levels and abrupt logic transitions are achieved, despite the limited transconductance and large output conductance typical of InAs-channel HFETs.

Index Terms:

resonant tunneling diode (RTD), resonant interband tunneling diode (RITD), heterostructure field-effect transistor (HFET), ultra-high-speed logic circuits

Citation:

P. Fay, G.H. Bernstein, D. Chow, J. Schulman, P. Mazumder, W. Williamson, B. Gilbert, "Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications," glsvlsi, pp.162, Ninth Great Lakes Symposium on VLSI, 1999

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