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19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT'04)
Noise Effects on Performance of Low Power Design Schemes in Deep Submicron Regime
Cannes, France
October 10-October 13
ISBN: 0-7695-2241-6
Mohamed Abbas, University of Tokyo, Japan
Makoto Ikeda, University of Tokyo, Japan
Kunihiro Asada, University of Tokyo, Japan
The noise immunity of modern CMOS digital design has become an important metrice as well as its power consumption. In the last decade, many low power design schemes have been presented. However, no one can simply judge which one is the best from the noise immunity point of view. In this paper, we evaluate the noise immunity of the static CMOS low power design schemes in terms of logic and delay error. To fulfill the aims of the paper, first a model representing the different sources of noise in deep submicron is presented. Then the model is applied to the most famous low power design schemes to find out the most robust one with regard to noise. Our results show the advantages of the dual threshold voltage scheme over other schemes from the noise immunity point of view. Moreover, it indicates that noise should be carefully taken into account when designing low power circuits; otherwise circuit performance would be unexpected. The study is carried out on three circuits; each is designed in five different schemes. The analysis is done using HSPICE, assuming 0.18 ?m CMOS technology.
Citation:
Mohamed Abbas, Makoto Ikeda, Kunihiro Asada, "Noise Effects on Performance of Low Power Design Schemes in Deep Submicron Regime," dft, pp.87-95, 19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT'04), 2004
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