Test Structure for IC(VBE) Parameter Determination of Low Voltage Applications

D
DATE
2002
2002 Design, Automation and Test in Europe Conference and Exhibition (DATE'02)
Abstract - Test Structure for IC(VBE) Parameter Determination of Low Voltage Applications

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	Similar Articles Articles by W. Rahajandraibe Articles by C. Dufaza Articles by D. Auvergne Articles by B. Cialdella Articles by B. Majoux Articles by V. Chowdhury

2002 Design, Automation and Test in Europe Conference and Exhibition (DATE'02)

Paris, France

March 04-March 08

ISBN: 0-7695-1471-5

	ASCII Text	x
	W. Rahajandraibe, C. Dufaza, D. Auvergne, B. Cialdella, B. Majoux, V. Chowdhury, "Test Structure for IC(VBE) Parameter Determination of Low Voltage Applications," Design, Automation and Test in Europe Conference and Exhibition, pp. 0316, 2002 Design, Automation and Test in Europe Conference and Exhibition (DATE'02), 2002.

	BibTex	x
	@article{ 10.1109/DATE.2002.998291, author = {W. Rahajandraibe and C. Dufaza and D. Auvergne and B. Cialdella and B. Majoux and V. Chowdhury}, title = {Test Structure for IC(VBE) Parameter Determination of Low Voltage Applications}, journal ={Design, Automation and Test in Europe Conference and Exhibition}, volume = {0}, year = {2002}, isbn = {0-7695-1471-5}, pages = {0316}, doi = {http://doi.ieeecomputersociety.org/10.1109/DATE.2002.998291}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Design, Automation and Test in Europe Conference and Exhibition TI - Test Structure for IC(VBE) Parameter Determination of Low Voltage Applications SN - 0-7695-1471-5 SP EP A1 - W. Rahajandraibe, A1 - C. Dufaza, A1 - D. Auvergne, A1 - B. Cialdella, A1 - B. Majoux, A1 - V. Chowdhury, PY - 2002 VL - 0 JA - Design, Automation and Test in Europe Conference and Exhibition ER -

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/DATE.2002.998291

The temperature dependence of the I_C(V_BE) relationship can be characterised by two parameters: EG and XTI. The classical method to extract these parameters consists in a "best fitting" from measured V_BE(T) values, using least square algorithm at constant collector current. This method involves an accurate measurement of V_BE voltage and an accurate value of the operating temperature. We propose in this paper, a configurable test structure dedicated to the extraction of temperature dependence of I_C(V_BE) characteristic for BJT designed with bipolar or BiCMOS processes. This allows a direct measurement of die temperature and consequently an accurate measurement of V_BE(T). First, the classical extraction method is explained. Then, the implementation techniques of the new method are discussed, the improvement of the design is presented.

Citation:

W. Rahajandraibe, C. Dufaza, D. Auvergne, B. Cialdella, B. Majoux, V. Chowdhury, "Test Structure for IC(VBE) Parameter Determination of Low Voltage Applications," date, pp.0316, 2002 Design, Automation and Test in Europe Conference and Exhibition (DATE'02), 2002

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