Design, Characterization & Modelling of a CMOS Magnetic Field Sensor

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	Similar Articles Articles by L. Latorre Articles by Y. Bertrand Articles by P. Hazard Articles by F. Pressecq Articles by P. Nouet

Design, Automation and Test in Europe (DATE '99)

Munich, Germany

March 09-March 12

ISBN: 0-7695-0078-1

	ASCII Text	x
	L. Latorre, Y. Bertrand, P. Hazard, F. Pressecq, P. Nouet, "Design, Characterization & Modelling of a CMOS Magnetic Field Sensor," Design, Automation and Test in Europe Conference and Exhibition, pp. 239, Design, Automation and Test in Europe (DATE '99), 1999.

	BibTex	x
	@article{ 10.1109/DATE.1999.761128, author = {L. Latorre and Y. Bertrand and P. Hazard and F. Pressecq and P. Nouet}, title = {Design, Characterization & Modelling of a CMOS Magnetic Field Sensor}, journal ={Design, Automation and Test in Europe Conference and Exhibition}, volume = {0}, year = {1999}, issn = {1530-1591}, pages = {239}, doi = {http://doi.ieeecomputersociety.org/10.1109/DATE.1999.761128}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Design, Automation and Test in Europe Conference and Exhibition TI - Design, Characterization & Modelling of a CMOS Magnetic Field Sensor SN - 1530-1591 SP EP A1 - L. Latorre, A1 - Y. Bertrand, A1 - P. Hazard, A1 - F. Pressecq, A1 - P. Nouet, PY - 1999 VL - 0 JA - Design, Automation and Test in Europe Conference and Exhibition ER -

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/DATE.1999.761128

This paper presents both the design and the characterization of a full CMOS magnetic field sensor. As an alternative to Hall effect sensors, it acts as a microscopic cantilever, deformed under the action of the Lorentz's force.

Citation:

L. Latorre, Y. Bertrand, P. Hazard, F. Pressecq, P. Nouet, "Design, Characterization & Modelling of a CMOS Magnetic Field Sensor," date, pp.239, Design, Automation and Test in Europe (DATE '99), 1999

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