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14th International Conference on Electronics, Communications and Computers
Bi-CMOS Opto-Electronic Reception System for Application in High-Frequencies
Veracruz, Mexico
February 16-February 18
ISBN: 0-7695-2074-X
J. Mart?nez-Castillo, Cinvestav-Unidad Guadalajara, M?xico
A. D?az-S?nchez, Instituto Nacional de Astrof?sica, ?ptica y Electr?nica, M?xico
A. Torres-J?come, Instituto Nacional de Astrof?sica, ?ptica y Electr?nica, M?xico
R. S. Murphy-Arteaga, Instituto Nacional de Astrof?sica, ?ptica y Electr?nica, M?xico
J. L. Finol, Motorola, SPS., Chandler, AZ
Two opto-electronics integrated circuits (OEIC) are presented. CMOS transimpedance amplifier (TIA) structures based on the common-gate topology, using negative feedback with the integration of a silicon photodiode, are discussed. Simulations were performed using BSIM3V3, modified BSIM3v3, and EKV models for high-frequency applications. Experimental and simulation results were performed for a 0.8 ?m Si BiCMOS AMS process, using HSPICE and CADENCE simulators. Experimental results, obtained from S-parameters, show a transimpedance gain of 40 dB and a bandwidth of 1.9 GHz.
Index Terms:
BiCMOS, low-noise amplifier, OEIC receiver, TIA, transimpedance amplifier
Citation:
J. Mart?nez-Castillo, A. D?az-S?nchez, A. Torres-J?come, R. S. Murphy-Arteaga, J. L. Finol, "Bi-CMOS Opto-Electronic Reception System for Application in High-Frequencies," conielecomp, pp.214, 14th International Conference on Electronics, Communications and Computers, 2004
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