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13th Asian Test Symposium (ATS'04)
Evaluation of Intra-Word Faults in Word-Oriented RAMs
Kenting, Taiwan
November 15-November 17
ISBN: 0-7695-2235-1
ASCII Text
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Said Hamdioui, John D. Reyes, Zaid Al-ars, "Evaluation of Intra-Word Faults in Word-Oriented RAMs," Asian Test Symposium, pp. 283-288, 13th Asian Test Symposium (ATS'04), 2004.
 
 
BibTex
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@article{ 10.1109/ATS.2004.42,
author = {Said Hamdioui and John D. Reyes and Zaid Al-ars},
title = {Evaluation of Intra-Word Faults in Word-Oriented RAMs},
journal ={Asian Test Symposium},
volume = {0},
year = {2004},
issn = {1081-7735},
pages = {283-288},
doi = {http://doi.ieeecomputersociety.org/10.1109/ATS.2004.42},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Asian Test Symposium
TI - Evaluation of Intra-Word Faults in Word-Oriented RAMs
SN - 1081-7735
SP283
EP288
A1 - Said Hamdioui,
A1 - John D. Reyes,
A1 - Zaid Al-ars,
PY - 2004
KW - null
VL - 0
JA - Asian Test Symposium
ER -
 
Said Hamdioui, Delft University of Technology and Currently with Philips Semiconductor Crolles R&D
John D. Reyes, Intel Corporation
Zaid Al-ars, Delft University of Technology and CatRam Solutions
This paper presents an industrial evaluation of tests for intra-word faults in word oriented memories, applied to big arrays with bit-interleaved organization as well as to small arrays with bit-adjacent organization, in order to investigate the influence of the memory organization on the intra-word faults. The test results show that the intra-word faults are also significantly important for interleaved memories, even though that the cells within a single word are not physically adjacent.
Citation:
Said Hamdioui, John D. Reyes, Zaid Al-ars, "Evaluation of Intra-Word Faults in Word-Oriented RAMs," ats, pp.283-288, 13th Asian Test Symposium (ATS'04), 2004
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