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12th Asian Test Symposium (ATS'03)
Stress Test for Disturb Faults in Non-Volatile Memories
Xi?an, China
November 16-November 19
ISBN: 0-7695-1951-2
ASCII Text
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Mohammad Gh. Mohammad, Kewal K. Saluja, "Stress Test for Disturb Faults in Non-Volatile Memories," Asian Test Symposium, pp. 384, 12th Asian Test Symposium (ATS'03), 2003.
 
 
BibTex
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@article{ 10.1109/ATS.2003.1250842,
author = {Mohammad Gh. Mohammad and Kewal K. Saluja},
title = {Stress Test for Disturb Faults in Non-Volatile Memories},
journal ={Asian Test Symposium},
volume = {0},
year = {2003},
issn = {1081-7735},
pages = {384},
doi = {http://doi.ieeecomputersociety.org/10.1109/ATS.2003.1250842},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
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TY - CONF
JO - Asian Test Symposium
TI - Stress Test for Disturb Faults in Non-Volatile Memories
SN - 1081-7735
SP
EP
A1 - Mohammad Gh. Mohammad,
A1 - Kewal K. Saluja,
PY - 2003
KW - null
VL - 0
JA - Asian Test Symposium
ER -
 
Mohammad Gh. Mohammad, Kuwait University
Kewal K. Saluja, University of Wisconsin-Madison
Non-volatile memories are susceptible to special type of faults known as program disturb faults. Testing for such faults requires the application of stress tests which have long application time to distinguish faulty cells from non-faulty cells. In this paper, we present a new sensing scheme that can be used with stress tests to allow for efficient detection of faulty cells based on the notion of margin reads. We demonstrate the efficiency of margin-read approach for distinguishing between faulty and fault-free cells using electrical simulations.
Citation:
Mohammad Gh. Mohammad, Kewal K. Saluja, "Stress Test for Disturb Faults in Non-Volatile Memories," ats, pp.384, 12th Asian Test Symposium (ATS'03), 2003
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