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10th Asian Test Symposium (ATS'01)
IDDQ Sensing Technique for High Speed IDDQ Testing
Kyoto, Japan
November 19-November 21
ISBN: 0-7695-1378-6
Teppei Takeda, The University of Tokushima
Masaki Hashizume, The University of Tokushima
Masahiro Ichimiya, The University of Tokushima
Hiroyuki Yotsuyanagi, The University of Tokushima
Yukiya Miura, Tokyo Metropolitan University
Kozo Kinoshita, Osaka Gakuin University
In this paper, a useful technique is proposed for realizing high speed IDDQ tests. By using the technique, load capacitors of the CMOS logic gates can be charged quickly, whose output logic level changes L to H by applying a test input vector to a circuit under test. The technique is applied to built-in IDDQ sensor design and external IDDQ sensor design. It is shown experimentally that high speed IDDQ tests can be realized by using the technique.
Citation:
Teppei Takeda, Masaki Hashizume, Masahiro Ichimiya, Hiroyuki Yotsuyanagi, Yukiya Miura, Kozo Kinoshita, "IDDQ Sensing Technique for High Speed IDDQ Testing," ats, pp.111, 10th Asian Test Symposium (ATS'01), 2001
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