In this paper, a useful technique is proposed for realizing high speed IDDQ tests. By using the technique, load capacitors of the CMOS logic gates can be charged quickly, whose output logic level changes L to H by applying a test input vector to a circuit under test. The technique is applied to built-in IDDQ sensor design and external IDDQ sensor design. It is shown experimentally that high speed IDDQ tests can be realized by using the technique.
Citation:
Teppei Takeda, Masaki Hashizume, Masahiro Ichimiya, Hiroyuki Yotsuyanagi, Yukiya Miura, Kozo Kinoshita, "IDDQ Sensing Technique for High Speed IDDQ Testing," ats, pp.111, 10th Asian Test Symposium (ATS'01), 2001