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| Tanay Karnik, Peter Hazucha, Jagdish Patel, "Characterization of Soft Errors Caused by Single Event Upsets in CMOS Processes," IEEE Transactions on Dependable and Secure Computing, vol. 1, no. 2, pp. 128-143, April-June, 2004. | |||
| BibTex | x | ||
| @article{ 10.1109/TDSC.2004.14, author = {Tanay Karnik and Peter Hazucha and Jagdish Patel}, title = {Characterization of Soft Errors Caused by Single Event Upsets in CMOS Processes}, journal ={IEEE Transactions on Dependable and Secure Computing}, volume = {1}, number = {2}, issn = {1545-5971}, year = {2004}, pages = {128-143}, doi = {http://doi.ieeecomputersociety.org/10.1109/TDSC.2004.14}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, } | |||
| RefWorks Procite/RefMan/Endnote | x | ||
| TY - JOUR JO - IEEE Transactions on Dependable and Secure Computing TI - Characterization of Soft Errors Caused by Single Event Upsets in CMOS Processes IS - 2 SN - 1545-5971 SP128 EP143 EPD - 128-143 A1 - Tanay Karnik, A1 - Peter Hazucha, A1 - Jagdish Patel, PY - 2004 KW - High performance KW - error tolerance KW - reliability KW - soft error KW - single event upset. VL - 1 JA - IEEE Transactions on Dependable and Secure Computing ER - | |||
[1] S. Thompson et al., “A 90nm Logic Technology Featuring 50nm Strained Silicon Channel Transistors, 7 Layers of Cu Interconnects, Low K ILD, and $\rm 1\mu M^2$ SRAM Cell,” Proc. IEEE Int'l Electronic Development Meeting, pp. 61-64, Dec. 2002.
[2] J.T. Wallmark and M. Marcus, “Minimum Size and Maximum Packing Density of Nonredundant Semiconductor Devices,” Proc. IRE Conf., pp. 286-298 Mar. 1962.
[3] D. Binder, E.C. Smith, and A.B. Holman, “Satellite Anomalies from Galactic Cosmic Rays,” IEEE Trans. Nuclear Science, vol. 22, pp. 2675-2680, Dec. 1975.
[4] T.C. May and M.H. Woods, “A New Physical Mechanism for Soft Errors in Dynamic Memories,” Proc. IEEE 16th Ann. Int'l Reliability Physics Symp., pp. 33-402, Apr. 1978.
[5] J.L. Ziegler and W.A. Lanford, “Effects of Cosmic Rays on Computer Memories,” Science, vol. 206, p. 776, 1979.
[6] C.S. Guenzer, E.A. Wolicki, and R.G. Allas, “Single Event Upset of Dynamic Rams by Neutrons and Protons,” IEEE Trans. Nuclear Science, vol. 26, pp. 5048-5052, Dec. 1979.
[7] T.J. O'Gorman, “The Effect of Cosmic Rays on the Soft Error Rate of a DRAM at Ground Level,” IEEE Trans. Electronic Devices, vol. 41, pp. 553-557, Apr. 1994.
[8] J. Olsen, P.E. Becher, P.B. Fynbo, P. Raaby, and J. Schult, “Neutron-Induced Single Event Upsets in Static Rams Observed at 10km Flight Altitude,” IEEE Trans. Nuclear Science, vol. 40, pp. 120-126, Dec. 1993.
[9] A. Taber and E. Normand, “Single Event Upset in Avionics,” IEEE Trans. Nuclear Science, vol. 40, pp. 120-126, Apr. 1993.
[10] R. Baumann, T. Hossain, E. Smith, S. Murata, and H. Kitagawa, “Boron as a Primary Source of Radiation in High Density DRAMs,” IEEE Symp. VLSI, pp. 81-82, 1995.
[11] E. Normand, “Single Event Upset at Ground Level,” IEEE Trans. Nuclear Science, vol. 43, pp. 2742-2750, Dec. 1996.
[12] P.D. Bradley and E. Normand, “Single Event Upsets in Implantable Cardioverter Defibrillators,” IEEE Trans. Nuclear Science, vol. 45, pp. 2929-2940, Dec. 1998.
[13] J.F. Ziegler, “Terrestrial Cosmic Rays,” IBM J. Research Development, pp. 19-39, Jan. 1996.
[14] E. Normand and T.J. Baker, “Altitude and Latitude Variations in Avionics SEU and Atmospheric Neutron Flux,” IEEE Trans. Nuclear Science, vol. 40, pp. 1484-1492, Dec. 1993.
[15] J.R. Lamarsh, Introduction to Nuclear Engineering, second ed., p. 56. Addison-Wesley, Jan. 1999.
[16] P.J. Griffin, T.F. Luera, F.W. Sexton, P.J. Cooper, S.G. Karr, and G.L. Hash, “The Role of Thermal and Fission Neutrons in Reactor Neutron-Induced Upsets in Commercial SRAMs,” IEEE Trans. Nuclear Science, vol. 44, pp. 2079-2086, Dec. 1997.
[17] R.C. Baumann and E.B. Smith, “Neutron-Induced Boron Fission as a Major Source of Soft Errors in Deep Submicron SRAM Devices,” Proc. IEEE 38th Ann. Int'l Reliability Physics Symp., pp. 152-157, 2000.
[18] L. Lantz, “Tutorial: Soft Errors Induced by Alpha Particles,” IEEE Trans. Reliability, vol. 45, pp. 174-179, June 1996.
[19] Sematech, “Call for Improved Ultra-Low Background Alpha-Particle Emission Metrology for the Semiconductor Industry,” http://www.sematech.org/docubase/document 4118axfr.pdf, 2001.
[20] SRIM 2003, http:/www.srim.org.
[21] R.N. Hamm, J.E. Turner, H.A. Wright, and R.H. Ritchie, “Heavy-Ion Track Structure in Silicon,” IEEE Trans. Nuclear Science, vol. 26, pp. 4892-4895, Dec. 1979.
[22] O. Fageeha, J. Howard, and R.C. Block, “Distribution of Radial Energy Deposition around the Track of Energetic Charged Particles in Silicon,” J. Applied Physics, vol. 75, pp. 2317-2321, Mar. 1994.
[23] E.J. Kobetich and R. Katz, “Width of Heavy-Ion Tracks in Emulsion,” Physics Rev., vol. 170, pp. 405-411, June 1968.
[24] C.M. Hsieh, P.C. Murley, and R.R. O'Brien, “A Field-Funneling Effect on the Collection of Alpha-Particle-Generated Carriers in Silicon Devices,” IEEE Electron Device Letters, vol. 2, pp. 103-105, Apr. 1981.
[25] F.B. McLean and T.R. Oldham, “Charge Funneling in N- And P-Type Si Substrates,” IEEE Trans. Nuclear Science, vol. 29, pp. 2018-2023, Dec. 1982.
[26] G.C. Messenger, “Collection of Charge on Junction Diodes from Ion Tracks,” IEEE Trans. Nuclear Science, vol. 29, pp. 2024-2031, Dec. 1982.
[27] L.D. Edmonds, “Charge Collected by Diffusion from an Ion Track Under Mixed Boundary Conditions,” IEEE Trans. Nuclear Science, vol. 38, pp. 834-837, Apr. 1991.
[28] L.D. Edmonds, “A Simple Estimate of Funneling-Assisted Charge Collection,” IEEE Trans. Nuclear Science, vol. 38, pp. 828-833, Apr. 1991.
[29] P.E. Dodd, F.W. Sexton, and P.S. Winokur, “Three-Dimensional Simulation of Charge Collection and Multiple-Bit Upset in Si Devices,” IEEE Trans. Nuclear Science, vol. 41, pp. 2005-2017, Dec. 1994.
[30] P.E. Dodd, “Device Simulation of Charge Collection and Single-Event Upset,” IEEE Trans. Nuclear Science, vol. 43, pp. 561-575, Apr. 1996.
[31] P.E. Dodd, F.W. Sexton, G.L. Hash, M.R. Shaneyfelt, B.L. Draper, A.J. Farino, and R.S. Flores, “Impact of Technology Trends on SEU in CMOS SRAMs,” IEEE Trans. Nuclear Science, vol. 43, pp. 2797-2804, Dec. 1996.
[32] Integrated Systems Engineering (ISE), http:/www.ise.ch, 2004.
[33] P. Hazucha, C. Svensson, and S.A. Wender, “Cosmic-Ray Soft Error Rate Characterization of a Standard 0.6-μM CMOS Process,” IEEE J. Solid-State Circuitry, vol. 35, pp. 1422-1429, Oct. 2000.
[34] P.E. Dodd and F.W. Sexton, “Critical Charge Concepts for CMOS SRAMs,” IEEE Trans. Nuclear Science, vol. 42, pp. 1764-1771, Dec. 1995.
[35] C. Detchevery, C. Dachs, E. Lorfevre, C. Sudre, G. Bruguier, and J.-M. Palau, “SEU Critical Charge and Sensitive Area in a Submicron CMOS Technology,” IEEE Trans. Nuclear Science, vol. 44, pp. 2266-2273, Dec. 1997.
[36] P. Roche, J.-M. Palau, K. Belhaddad, G. Bruguier, R. Ecoffet, and J. Gasiot, “SEU Response of an Entire SRAM Cell Simulated as One Contiguous Three Dimensional Device Domain,” IEEE Trans. Nuclear Science, vol. 45, pp. 2534-2543, Dec. 1998.
[37] T.V. Rajeevakumar, N.C.C. Lu, W.H. Henkels, W. Hwang, and R. Franch, “A New Failure Mode of Radiation-Induced Soft Errors in Dynamic Memories,” IEEE Electron Device Letters, vol. 9, pp. 644-646, Dec. 1988.
[38] S. Lin and D.J. Costello, Error Control Coding: Fundamentals and Applications. Prentice Hall, 1983.
[39] T. Karnik, S. Vangal, V. Veeramachaneni, P. Hazucha, V. Erraguntla, and S. Borkar, “Selective Node Engineering for Chip-Level Soft Error Rate Improvement,” IEEE Symp. VLSI, pp. 204-205, June 2002.
[40] P. Liden, P. Dahlgren, R. Johansson, and J. Karlsson, “On Latching Probability of Particle Induced Transients in Combinational Networks,” Proc. 24th Int'l Symp. Fault-Tolerant Computing, pp. 340-349, June 1994.
[41] H. Cha and J.H. Patel, “A Logic-Level Model for α-Particle Hits in CMOS Circuits,” IEEE Int'l Conf. Computer Design, pp. 538-542, Oct. 1993.
[42] P. Dahlgren and P. Liden, “A Switch-Level Algorithm for Simulation of Transients in Combinational Logic,” Proc. IEEE 25th Int'l Symp. Fault-Tolerant Computing, pp. 207-216, June 1995.
[43] H. Cha, E.M. Rudnick, J.H. Patel, R.K. Iyer, and G.S. Choi, “A Gate-Level Simulation Environment for Alpha-Particle-Induced Transient Faults,” IEEE Trans. Computers, vol. 45, no. 11. pp. 1248-1256, Nov. 1996.
[44] Z. Kalbarczyk, R.K. Iyer, G.L. Ries, J.U. Patel, M.S. Lee, and Y. Xiao, “Hierarchical Simulation Approach to Accurate Fault Modeling for System Dependability Evaluation,” IEEE Trans. Software Eng., vol. 25, no. 5, pp. 619-632, Sept./Oct. 1999.
[45] H.T. Nguyen and Y. Yagil, “A Systematic Approach to SER Estimation and Solutions,” Proc. IEEE 41st Ann. Int'l Reliability Physics Symp., pp. 60-70, Mar. 2003.
[46] J. Maiz, S. Hareland, K. Zhang, and P. Armstrong, “Characterization of Multibit Soft Error Events in Advanced SRAMs,” Proc. IEEE Int'l Electronic Device Meeting, pp. 519-522, Dec. 2003.
[47] K. Johansson, M. Ohlsson, N. Olsson, J. Blomgren, and P.-U. Renberg, “Neutron-Induced Single-Word Multiple-Bit Upset in SRAM,” IEEE Trans. Nuclear Science, vol. 46, pp. 1427-1433, Dec. 1999.
[48] K. Johansson, P. Dyreklev, B. Granbom, M.C. Calvet, S. Fourtine, and O. Feuillatre, “In-Flight and Ground Testing of Single Event Upset Sensitivity in Static Rams,” IEEE Trans. Nuclear Science, vol. 45, pp. 1628-1632, June 1998.
[49] E. Normand, “Correlation of Inflight Neutron Dosimeter and SEU Measurements With Atmospheric Neutron Model,” IEEE Trans. Nuclear Science, vol. 48, pp. 1996-2003, Dec. 2001.
[50] T.J. O'Gorman, J.M. Ross, A.H. Taber, J.F. Ziegler, H.P. Muhlfeld, C.J. Montrose, H.W. Curtis, and J.L. Walsh, “Field Testing for Cosmic Ray Soft Errors in Semiconductor Memories,” IBM J. Research and Development, vol. 40, pp. 41-49, Jan. 1996.
[51] “Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices,” JEDEC standard JESD89, Aug. 2001.
[52] R. Baumann, T. Hossain, S. Murata, and H. Kitagawa, “Boron Compounds as a Dominant Source of Alpha Particles in Semiconductor Devices,” Proc. IEEE 33rd Ann. Int'l Reliability Physics Symp., pp. 297-302, Apr. 1995.
[53] H. Kobayashi, K. Shiraishi, H. Tsuchiya, M. Motoyoshi, H. Usuki, Y. Nagai, K. Takahisa, T. Yoshiie, Y. Sakurai, and T. Ishizaki, “Soft Errors in SRAM Devices Induced by High Energy Neutrons, Thermal Neutrons and Alpha Particles,” Proc. IEEE Int'l Electronic Device Meeting, pp. 337-340, Dec. 2002.
[54] http:/wnr.lanl.gov/, 2004.
[55] J.F. Ziegler et al., “IBM Experiments in Soft Fails in Computer Electronics (1978-1994),” IBM J. Research and Development, vol. 40, no. 1, pp. 3-18, Jan. 1996.
[56] C.A. Gossett, B.W. Hughlock, M. Katoozi, G.S. LaRue, and S.A. Wender, “Single Event Phenomena in Atmospheric Neutron Environments,” IEEE Trans. Nuclear Science, vol. 40, pp. 1845-1852, Dec. 1993.
[57] E. Normand, D.L. Oberg, J.L. Wert, P.P. Majewski, G.A. Woffinden, S. Satoh, K. Sasaki, M.G. Tverskoy, V.V. Miroshkin, N. Golemnikov, S.A. Wender, and A. Gavron, “Comparison and Implications of Charge Collection Measurements in Silicon and InGaAs Irradiated by Energetic Protons and Neutrons,” IEEE Trans. Nuclear Science, vol. 42, pp. 1815-1822, Dec. 1995.
[58] Y. Tosaka, S. Satoh, K. Suzuki, T. Sugii, N. Nakayama, H. Ehara, G.A. Woffinden, and S.A. Wender, “Measurements and Analysis of Neutron-Reaction-Induced Charges in a Silicon Surface Region,” IEEE Trans. Nuclear Science, vol. 44, pp. 173-178, Apr. 1997.
[59] K. Johansson, P. Dyreklev, B. Granbom, N. Olsson, J. Blomgren, and P.-U. Renberg, “Energy-Resolved Neutron Measurements from 22 to 160 MeV,” IEEE Trans. Nuclear Science, vol. 45, pp. 2519-2526, Dec. 1998.
[60] Y. Yahagi, E. Ibe, Y. Saito, A. Eto, M. Sato, H. Kameyama, M. Hidaka, K. Terunuma, T. Nunomiya, T. Nakamura, P.-U. Renberg, and A. Prokofiev, “Self-Consistent Integrated System for Susceptibility to Terrestrial Neutron Induced Soft-Error of Sub-Quarter Micron Memory Devices,” Proc. IEEE Int'l Integrated Reliability Workshop, pp. 143-146, Oct. 2002.
[61] E. Normand, D.L. Oberg, J.L. Wert, J.D. Ness, P.P. Majewski, S.A. Wender, and A. Gavron, “Single Event Upset and Charge Collection Measurements Using High Energy Protons and Neutrons,” IEEE Trans. Nuclear Science, vol. 41, pp. 2203-2209, Dec. 1994.
[62] J.F. Ziegler, M.E. Nelson, J.D. Shell, R.J. Peterson, C.J. Gelderloos, H.P. Muhlfeld, and C.J. Montrose, “Cosmic Ray Soft Error Rates of 16-Mb DRAM Memory Chips,” IEEE J. Solid-State Circuitry, vol. 33, pp. 246-252, Feb. 1998.
[63] J. Ziegler, “Review of Accelerated Testing of SRAMs,” Proc. Fourth Ann. Conf. Reliability, Nov. 2000, http://www.sematech.org/meetings/20001030 index.htm.
[64] P. Hazucha, T. Karnik, J. Maiz, S. Walstra, B. Bloechel, J. Tschanz, G. Dermer, S. Hareland, P. Armstrong, and S. Borkar, “Neutron Soft Error Rate Measurements in a 90-nm CMOS Process and Scaling Trends in SRAM from 0.25μm to 90nm Generation,” Proc. IEEE Int'l Electronic Development Meeting, pp. 523-526, Dec. 2003.
[65] E. Normand and W.R. Doherty, “Incorporation of ENDF-V Neutron Cross-Section Data for Calculating Neutron-Induced Single Event Upsets,” IEEE Trans. Nuclear Science, vol. 36, pp. 2349-2355, Dec. 1989.
[66] G.R. Srinivasan, H.K. Tang, and P.C. Murley, “Parameter-Free, Predictive Modeling of Single Event Upsets Due to Protons, Neutrons, and Pions in Terrestrial Cosmic Rays,” IEEE Trans. Nuclear Science, vol. 41, pp. 2063-2070, Dec. 1994.
[67] P.C. Murley and G.R. Srinivasan, “Soft-Error Monte Carlo Modeling Program, SEMM,” IBM J. Research and Development, vol. 40, pp. 109-118, Jan. 1996.
[68] Y. Tosaka, S. Satoh, and T. Itakura, “Neutron-Induced Soft Error Simulator and Its Accurate Predictions,” Proc. IEEE Conf. Simulation of Semiconductor Processes and Devices, pp. 253-256, 1997.
[69] C. Vial, J.M. Palau, J. Gasiot, M.C. Calvet, and S. Fourtine, “A New Approach for the Prediction of the Neutron-Induced SEU Rate,” IEEE Trans. Nuclear Science, vol. 45, pp. 2915-2920, Dec. 1998.
[70] Y. Tosaka, H. Kanata, S. Satoh, and T. Itakura, “Simple Method for Estimating Neutron-Induced Soft Error Rates Based on Modified BGR Method,” IEEE Electronic Device Letters, vol. 20, pp. 89-91, Feb. 1999.
[71] P. Hazucha and C. Svensson, “Optimized Test Circuits for SER Characterization of a Manufacturing Process,” IEEE J. Solid-State Circuits, vol. 35, pp. 142-148, Feb. 2000.
[72] T. Karnik, B. Bloechel, K. Soumyanath, V. De, and S. Borkar, “Scaling Trends of Cosmic Ray Induced Soft Errors in Static Latches beyond 0.18μm,” Proc. IEEE Symp. VLSI, pp. 61-62, June 2001.
[73] P. Hazucha, T. Karnik, S. Walstra, B. Bloechel, J. Tschanz, J. Maiz, K. Soumyanath, G. Dermer, S. Narendra, V. De, and S. Borkar, “Measurements and Analysis of SER Tolerant Latch in a 90 nm Dual-Vt CMOS Process,” Proc. IEEE Custom Integrity Circuitry Conf., pp. 617-620, Sept. 2003.
[74] J.C. Pickel, “Effect of CMOS Miniaturization on Cosmic-Ray-Induced Error Rate,” IEEE Trans. Nuclear Science, vol. 29, pp. 2049-2054, Dec. 1982.
[75] E.L. Petersen, P. Shapiro, J.H. Adams, and E.A. Burke, “Calculation of Cosmic-Ray Induced Soft Upsets and Scaling in VLSI Devices,” IEEE Trans. Nuclear Science, vol. 29, pp. 2055-2063, Dec. 1982.
[76] Y. Tosaka, S. Satoh, T. Itakura, H. Ehara, T. Ueda, G.A. Woffinden, and S.A. Wender, “Measurement and Analysis of Neutron-Induced Soft Errors in Sub-Half-Micron CMOS Circuits,” IEEE Trans. Electronic Devices, vol. 45, pp. 1453-1458, July 1998.
[77] N. Seifert, X. Zhu, and L.W. Massengill, “Impact of Scaling on Soft-Error Rates in Commercial Microprocessors,” IEEE Trans. Nuclear Science, vol. 49, pp. 3100-3106, Dec. 2002.
[78] P. Hazucha and C. Svensson, “Impact of CMOS Technology Scaling on the Atmospheric Neutron Soft Error Rate,” IEEE Trans. Nuclear Science, vol. 47, pp. 2586-2594, Dec. 2000.
[79] P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank, and G.L. Hash, “Neutron-Induced Soft Errors, Latchup, and Comparison of SER Test Methods for SRAM Technologies,” Proc. IEEE Int'l Electronic Device Meeting, pp. 333-336, Dec. 2002.
[80] T. Granlund, B. Granbom, and N. Olsson, “Soft Error Rate Increase for New Generations of SRAMs,” IEEE Trans. Nuclear Science, vol. 50, pp. 2065-2068, Dec. 2003.
[81] E.H. Cannon, D.D. Reinhardt, and P.S. Makowenskyj, “SRAM SER in 90, 130, and 180nm Bulk and SOI Technologies,” Proc. IEEE 42nd Ann. Int'l Reliability Physics Symp., Apr. 2004.
[82] T. Juhnke and H. Klar, “Calculation of the Soft Error Rate of Submicron CMOS Logic Circuits,” IEEE J. Solid-State Circuitry, vol. 30, pp. 830-834, July 1995.
[83] N. Cohen, T.S. Sriram, N. Leland, D. Moyer, S. Bulter, and R. Flatley, “Soft Error Considerations for Deep-Submicron CMOS Circuit Applications,” Proc. IEEE Int'l Electronic Device Meeting, pp. 315-318, Dec. 1999.
[84] C. Dai, N. Hakim, S. Hareland, J. Maiz, and S.-W. Lee, “Alpha-SER Modeling and Simulation for Sub-0.25um CMOS Technology,” Proc. IEEE Symp. VLSI, pp. 81-82, June 1999.
[85] Y. Tosaka, K. Suzuki, and T. Sugii, “Alpha Particle Induced Soft Errors in Submicron SOI SRAM,” Proc. IEEE Symp. VLSI, pp. 39-40, 1995.
[86] S. Hareland, J. Maiz, M. Alavi, K. Mistry, S. Walstra, and C. Dai, “Impact of CMOS Process Scaling and SOI on the Soft Error Rates of Logic Processes,” IEEE Symp. VLSI, pp. 12-14, June 2001.
[87] P. Roche, G. Gasiot, K. Forbes, V. O'Sullivan, and V. Ferlet, “Comparisons of Soft Error Rate for SRAMs in Commercial SOI and Bulk below the 130-nm Technology Node,” IEEE Trans. Nuclear Science, vol. 50, pp. 2046-2054, Dec. 2003.
[88] R. Baumann, “The Impact of Technology Scaling on Soft Error Rate Performance and Limits to the Efficacy of Error Correction,” Proc. IEEE Int'l Electronic Device Meeting, pp. 329-332, Dec. 2002.
[89] H. Sato, T. Wada, S. Ohbayashi, K. Kozaru, Y. Okamoto, Y. Higashide, T. Shimizu, Y. Maki, R. Morimoto, H. Otoi, T. Koga, H. Honda, M. Taniguchi, Y. Arita, and T. Shiomi, IEEE J. Solid-State Circuitry, vol. 34, pp. 1571-1579, Nov. 1999.
[90] S.-M. Jung, H. Lim, W. Cho, H. Cho, H. Hong, J. Jeong, S. Jung, H. Park, B. Son, Y. Jang, and K. Kim, “Soft Error Immune 0.46μM2 SRAM Cell with MIM Node Capacitor by 65nm CMOS Technology for Ultra High Speed SRAM,” Proc. IEEE Int'l Electronic Device Meeting, pp. 289-302, Dec. 2003.
[91] L. Geppert, “A Static RAM Says Goodbye to Data Errors,” IEEE Spectrum, Feb. 2004.
[92] P. Oldiges, K. Bernstein, D. Heidel, B. Klaasen, E. Cannon, R. Dennard, H. Tang, M. Ieong, and H.-S. P. Wong, “Soft Error Rate Scaling for Emerging SOI Technology Options,” Proc. IEEE Symp. VLSI, pp. 46-47, 2002.
[93] K.R. Mistry, J.W. Sleight, G. Grula, R. Flatley, B. Miner, L.A. Bair, and D.A. Antoniadis, “Parasitic Bipolar Gain Reduction and the Optimization of 0.15-um Partially Depleted SOI Mosfets,” IEEE Trans. Electronic Devices, vol. 46, pp. 2201-2209, Nov. 1999.
[94] Y. Hirano, T. Matsumoto, S. Maeda, T. Iwamatsu, T. Kunikiyo, K. Nii, K. Yamamoto, Y. Yamaguchi, T. Ipposhi, S. Maegawa, and M. Inuishi, “Impact of 0. 1μm SOI CMOS with Body-Tied Hybrid Trench Isolation Structure to Break through the Scaling Crisis of Silicon Technology,” Proc. IEEE Int'l Electronic Device Meeting, pp. 467-470, Dec. 2000.
[95] G. Gasiot, V. Ferlet-Cavrois, P. Roche, P. Flatresse, C. D'Hose, O. Musseau, and J. du Port de Poncharra, “Comparison of the Sensitivity to Heavy Ions of 0.25μm Bulk and SOI Technologies,” IEEE Trans. Nuclear Science, vol. 49, pp. 1450-1455, June 2002.
[96] P. Shivakumar, M. Kistler, S.W. Keckler, D. Burger, and L. Alvisi, “Modeling the Effect of Technology Trends on the Soft Error Rate of Combinational Logic,” Proc. Int'l Conf. Dependability Systems Networks, pp. 389-398, June 2002.
[97] D.M. Hiemstra, S. Yu, and M. Pop, “Single Event Upset Characterization of the Pentium4, Pentium III and Low Power Pentium MMM Microprocessors Using Proton Irradiation,” Proc. IEEE Radiation Effects Data Workshop, pp. 51-57, July 2002.
[98] S. Patel, Univ. of Mumbai, private communication, 2003.

