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High-Performance DRAMs in Workstation Environments
November 2001 (vol. 50 no. 11)
pp. 1133-1153

Abstract—This paper presents a simulation-based performance study of several of the new high-performance DRAM architectures, each evaluated in a small system organization. These small-system organizations correspond to workstation-class computers and use only a handful of DRAM chips (~10, as opposed to ~1 or ~100). The study covers Fast Page Mode, Extended Data Out, Synchronous, Enhanced Synchronous, Double Data Rate, Synchronous Link, Rambus, and Direct Rambus designs. Our simulations reveal several things: 1) Current advanced DRAM technologies are attacking the memory bandwidth problem but not the latency problem; 2) bus transmission speed will soon become a primary factor limiting memory-system performance; 3) the post-L2 address stream still contains significant locality, though it varies from application to application; 4) systems without L2 caches are feasible for low- and medium-speed CPUs (1GHz and below); and 5) as we move to wider buses, row access time becomes more prominent, making it important to investigate techniques to exploit the available locality to decrease access time.

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Index Terms:
DRAM architectures, DRAM performance, DRAM systems, system modeling, DDR DRAM, Direct Rambus DRAM, PC100 SDRAM, DDR2 DRAM.
Citation:
Vinodh Cuppu, Bruce Jacob, Brian Davis, Trevor Mudge, "High-Performance DRAMs in Workstation Environments," IEEE Transactions on Computers, vol. 50, no. 11, pp. 1133-1153, Nov. 2001, doi:10.1109/12.966491
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