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Analysis of Gate Oxide Shorts in CMOS Circuits
December 1993 (vol. 42 no. 12)
pp. 1510-1516

The resistance dependence, voltage dependence, temperature dependence, and pattern dependence properties of CMOS logic gate operation in the presence of gate oxide shorts are analyzed. The analysis is based on realistic defect models that incorporate the resistive nature of gate oxide shorts and the difference between gate oxide shorts in n- and p-channel transistors.

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Index Terms:
CMOS integrated circuits; integrated logic circuits; logic gates; semiconductor device models; gate oxide shorts; CMOS circuits; resistance dependence; voltage dependence; temperature dependence; pattern dependence; logic gate operation; defect models; p-channel transistors; n-channel transistors.
Citation:
Hong Hao, E.J. McCluskey, "Analysis of Gate Oxide Shorts in CMOS Circuits," IEEE Transactions on Computers, vol. 42, no. 12, pp. 1510-1516, Dec. 1993, doi:10.1109/12.260643
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