The Community for Technology Leaders
RSS Icon
Subscribe
Issue No.12 - December (1993 vol.42)
pp: 1510-1516
ABSTRACT
<p>The resistance dependence, voltage dependence, temperature dependence, and pattern dependence properties of CMOS logic gate operation in the presence of gate oxide shorts are analyzed. The analysis is based on realistic defect models that incorporate the resistive nature of gate oxide shorts and the difference between gate oxide shorts in n- and p-channel transistors.</p>
INDEX TERMS
CMOS integrated circuits; integrated logic circuits; logic gates; semiconductor device models; gate oxide shorts; CMOS circuits; resistance dependence; voltage dependence; temperature dependence; pattern dependence; logic gate operation; defect models; p-channel transistors; n-channel transistors.
CITATION
Hong Hao, E.J. McCluskey, "Analysis of Gate Oxide Shorts in CMOS Circuits", IEEE Transactions on Computers, vol.42, no. 12, pp. 1510-1516, December 1993, doi:10.1109/12.260643
6 ms
(Ver 2.0)

Marketing Automation Platform Marketing Automation Tool