|
| This Article | ||
| ||
| Share | ||
| Bibliographic References | ||
| Add to: | ||
| | ||
| Search | ||
| ||
| ASCII Text | x | ||
| F.J. Meyer, D.K. Pradhan, "Modeling Defect Spatial Distribution," IEEE Transactions on Computers, vol. 38, no. 4, pp. 538-546, April, 1989. | |||
| BibTex | x | ||
| @article{ 10.1109/12.21146, author = {F.J. Meyer and D.K. Pradhan}, title = {Modeling Defect Spatial Distribution}, journal ={IEEE Transactions on Computers}, volume = {38}, number = {4}, issn = {0018-9340}, year = {1989}, pages = {538-546}, doi = {http://doi.ieeecomputersociety.org/10.1109/12.21146}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, } | |||
| RefWorks Procite/RefMan/Endnote | x | ||
| TY - JOUR JO - IEEE Transactions on Computers TI - Modeling Defect Spatial Distribution IS - 4 SN - 0018-9340 SP538 EP546 EPD - 538-546 A1 - F.J. Meyer, A1 - D.K. Pradhan, PY - 1989 KW - defect spatial distribution modelling; center-satellite model; wafers; cluster; yield models; redundancy techniques; WSI; fault-tolerant designs; circuit CAD; fault tolerant computing; VLSI. VL - 38 JA - IEEE Transactions on Computers ER - | |||
[1] R. S. Burington,Handbook of Mathematical Tables and Formulas. Sandusky, OH: Handbook Publishers, 1933.
[2] J. Burkill,The Lebesgue Integral. Cambridge, England: University Press, 1953.
[3] A. Cliff and J. Ord,Spatial Processes: Models and Applications. London, England: Pion, 1981.
[4] W. Feller, "On a general class of 'contagious' distributions,"Ann. Math. Stat., vol. 14, pp. 389-400, 1943.
[5] A. V. Ferris-Prabhu, "Modeling the critical area in yield forecasts,"IEEE J. Solid-State Circuits, vol. SC-20, pp. 874-878, Aug. 1985.
[6] A. Gupta, W. A. Porter, and J. A. Lathrop, "Defect analysis and yield degradation of integrated circuits,"IEEE J. Solid-State Circuits, vol. SC-9, pp. 96-102, June 1974.
[7] E. Horowitz and A. Zorat, "The binary tree as an interconnection network: Applications to multiprocessor systems and VLSI,"IEEE Trans. Comput., vol. C-30, pp. 247-253, Apr. 1981.
[8] S. Kotz and N. L. Johnson,Encyclopedia of Statistical Sciences. New York: Wiley, 1982.
[9] F. J. Meyer and D. K. Pradhan, "The center-satellite model: A WSI-ready model of spatial dispersion," Tech. Rep., Dep. Elec. Comput. Eng., Univ. of Massachusetts, Amherst, MA, Nov. 1988.
[10] H. Mughal, W. Eccleston, and R. Stuart, "Spatial distribution of defects in SiO2,"Electron. Lett., vol. 14, pp. 761-762, Nov. 23, 1978.
[11] B. T. Murphy, "Cost-size optima for monolithic integrated circuits,"Proc. IEEE, vol. 52, pp. 1537-1545, Dec. 1964.
[12] J. Neyman, "On a new class of 'contagious' distributions applicable in entomology and bacteriology,"Ann. Math. Stat., vol. 10, pp. 35-57, 1939.
[13] O. Paz and T. L. Lawson, "Modification of Poisson statistics: Modeling defects induced by diffusion,"IEEE J. Solid-State Circuits, vol. SC-12, pp. 540-546, Oct. 1977.
[14] C. Stapper, "Modeling of defects in integrated circuit photolithographic patterns,"IBM J. Res. Develop., vol. 28, pp. 461-475, July 1984.
[15] C. Stapper, "Yield model for fault clusters within integrated circuits,"IBM J. Res. Develop., vol. 28, pp. 636-640, Sept. 1984.
[16] C. Stapper, "The effects of wafer to wafer defect density variations on integrated circuity defect and fault distributions,"IBM J. Res. Develop., vol. 29, pp. 87-97, Jan. 1985.
[17] C. H. Stapper, "On yield, fault distributions and clustering of particles,"IBM J. Res. Develop., vol. 30, no. 3, pp. 326-338, May 1986.
[18] C. H. Stapper, "Correlation analysis of particle clusters on integrated circuit wafers,"IBM J. Res. Develop., vol. 31, pp. 641-650, Nov. 1987.
[19] C. H. Stapper, F. M. Armstrong, and K. Saji, "Integrated circuit yield statistics,"Proc. IEEE, vol. 71, pp. 453-470, Apr. 1983.
[20] R. M. Warner, Jr., "Applying a composite model to the IC yield problem,"IEEE J. Solid-State Circuits, vol. SC-9, pp. 86-95, June 1974.
[21] W. Warren, "The center-satellite concept as a basis for ecological sampling,"Stat. Ecol., vol. 2, pp. 87-118, 1971.
[22] T. Yanagawa, "Yield degradation of integrated circuits due to spot defects,"IEEE Trans. Electron. Devices, vol. ED-19, pp. 190-197, Feb. 1972.

