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Issue No.11 - November (1986 vol.35)
pp: 996-1000
T. Fuja , School of Electrical Engineering, Cornell University
ABSTRACT
We describe and analyze row/column replacement, the technique currently used to control hard cell defects in semiconductor RAM's during manufacture. This strategy is shown to be asymptotically ineffective; it is demonstrated that this ineffectiveness may become a limiting issue for very large memory arrays.
INDEX TERMS
yield improvement, Error-control coding, hard defects, RAM's, redundancy, reliability, row/column replacement
CITATION
T. Fuja, C. Heegard, "Row/Column Replacement for the Control of Hard Defects in Semiconductor RAM's", IEEE Transactions on Computers, vol.35, no. 11, pp. 996-1000, November 1986, doi:10.1109/TC.1986.1676701
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