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November 1986 (vol. 35 no. 11)
pp. 996-1000
T. Fuja, School of Electrical Engineering, Cornell University
We describe and analyze row/column replacement, the technique currently used to control hard cell defects in semiconductor RAM's during manufacture. This strategy is shown to be asymptotically ineffective; it is demonstrated that this ineffectiveness may become a limiting issue for very large memory arrays.
Index Terms:
yield improvement, Error-control coding, hard defects, RAM's, redundancy, reliability, row/column replacement
Citation:
T. Fuja, C. Heegard, "Row/Column Replacement for the Control of Hard Defects in Semiconductor RAM's," IEEE Transactions on Computers, vol. 35, no. 11, pp. 996-1000, Nov. 1986, doi:10.1109/TC.1986.1676701
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