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November 1986 (vol. 35 no. 11)
pp. 996-1000
| ASCII Text | x | ||
| T. Fuja, C. Heegard, "Row/Column Replacement for the Control of Hard Defects in Semiconductor RAM's," IEEE Transactions on Computers, vol. 35, no. 11, pp. 996-1000, November, 1986. | |||
| BibTex | x | ||
| @article{ 10.1109/TC.1986.1676701, author = {T. Fuja and C. Heegard}, title = {Row/Column Replacement for the Control of Hard Defects in Semiconductor RAM's}, journal ={IEEE Transactions on Computers}, volume = {35}, number = {11}, issn = {0018-9340}, year = {1986}, pages = {996-1000}, doi = {http://doi.ieeecomputersociety.org/10.1109/TC.1986.1676701}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, } | |||
| RefWorks Procite/RefMan/Endnote | x | ||
| TY - JOUR JO - IEEE Transactions on Computers TI - Row/Column Replacement for the Control of Hard Defects in Semiconductor RAM's IS - 11 SN - 0018-9340 SP996 EP1000 EPD - 996-1000 A1 - T. Fuja, A1 - C. Heegard, PY - 1986 KW - yield improvement KW - Error-control coding KW - hard defects KW - RAM's KW - redundancy KW - reliability KW - row/column replacement VL - 35 JA - IEEE Transactions on Computers ER - | |||
We describe and analyze row/column replacement, the technique currently used to control hard cell defects in semiconductor RAM's during manufacture. This strategy is shown to be asymptotically ineffective; it is demonstrated that this ineffectiveness may become a limiting issue for very large memory arrays.
Index Terms:
yield improvement, Error-control coding, hard defects, RAM's, redundancy, reliability, row/column replacement
Citation:
T. Fuja, C. Heegard, "Row/Column Replacement for the Control of Hard Defects in Semiconductor RAM's," IEEE Transactions on Computers, vol. 35, no. 11, pp. 996-1000, Nov. 1986, doi:10.1109/TC.1986.1676701
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