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A Graph Model for Pattern-Sensitive Faults in Random Access Memories
December 1981 (vol. 30 no. 12)
pp. 973-977
| ASCII Text | x | ||
| S.C. Seth, K. Narayanaswamy, "A Graph Model for Pattern-Sensitive Faults in Random Access Memories," IEEE Transactions on Computers, vol. 30, no. 12, pp. 973-977, December, 1981. | |||
| BibTex | x | ||
| @article{ 10.1109/TC.1981.1675737, author = {S.C. Seth and K. Narayanaswamy}, title = {A Graph Model for Pattern-Sensitive Faults in Random Access Memories}, journal ={IEEE Transactions on Computers}, volume = {30}, number = {12}, issn = {0018-9340}, year = {1981}, pages = {973-977}, doi = {http://doi.ieeecomputersociety.org/10.1109/TC.1981.1675737}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, } | |||
| RefWorks Procite/RefMan/Endnote | x | ||
| TY - JOUR JO - IEEE Transactions on Computers TI - A Graph Model for Pattern-Sensitive Faults in Random Access Memories IS - 12 SN - 0018-9340 SP973 EP977 EPD - 973-977 A1 - S.C. Seth, A1 - K. Narayanaswamy, PY - 1981 KW - single pattern-sensitive faults KW - Coloring algorithm KW - graph modeling KW - optimal transition write sequences KW - RAM testing VL - 30 JA - IEEE Transactions on Computers ER - | |||
This correspondence generalizes Hayes' recent ideas for generating an optimal transition write sequence which forms the "backbone" of his algorithm for testing semiconductor RAM's for pattern-sensitive faults. The generalization, presented in graph theoretic terms, involves two sequential steps. The frmst step results in assigning of a "color" to each memory cell. In the second step, each color is defined as a distinct sequence of bits representing the sequence of states assumed by the correspondingly colored cell. The constraints imposed at each step lead to interesting and general problems in graph theory: the standard graph coloring problem in the first step, and a path projection problem from a binary m-cube to a subcube in the second step. Applications to arbitrary k-cell neighborhoods, and particularly to three-cell neighborhoods are shown.
Index Terms:
single pattern-sensitive faults, Coloring algorithm, graph modeling, optimal transition write sequences, RAM testing
Citation:
S.C. Seth, K. Narayanaswamy, "A Graph Model for Pattern-Sensitive Faults in Random Access Memories," IEEE Transactions on Computers, vol. 30, no. 12, pp. 973-977, Dec. 1981, doi:10.1109/TC.1981.1675737
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