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Issue No.03 - March (1977 vol.26)
pp: 281-288
H.T. Mouftah , Department of Electrical Engineering, University of Toronto
ABSTRACT
Ternary storage elements are realized using ternary operators and fundamental circuits, designed with the COS/MOS integrated circuits. Several ternary flip-flops (tri-flops) are constructed and described in detail: the PZN (set positive, set zero, and set negative), the clocked PZN, the D-type, and the T-type. Ternary shift registers and ring counter are formed by means of these tri-flops. A maste
INDEX TERMS
COS/MOS integrated circuits, fundamental ternary circuits, multiple-valued logic, programmable divide-by-N counters, ternary counters, ternary flip-flops, ternary logic implementation, ternary memory cells, ternary sequential logic.
CITATION
H.T. Mouftah, "Design of Ternary COS/MOS Memory and Sequential Circuits", IEEE Transactions on Computers, vol.26, no. 3, pp. 281-288, March 1977, doi:10.1109/TC.1977.1674821