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An Expandable Ferroelectric Random Access Memory
February 1973 (vol. 22 no. 2)
pp. 154-158
A.B. Kaufman, Lockheed Aircraft Corporation
A ferroelectric memory array is described that may be implemented with discrete bits, discrete words, or multiple word components. Binary information is stored as either a positive or negative polarization state in the ferroelectric ceramic material and is read out, with interrogation, by sensing a positive polarity pulse for a " 1" bit, and the lack of a signal for a " 0." The maximum size of the memory is limited only by noise isolation of the bit lines. The array, because of its nonresonant operation, may be interrogated asynchronously. The memory READ/WRITE circuit configuration provides random word access, a device immune to disturb pulses, and compatibility with integrated or discrete circuits. The ceramic material and its configuration provide nonvolatile storage and non-destructive readout. Experimental 5-wordX8-bit discrete word prototype memory array implementations are examined.
Index Terms:
Ceramic memory, ferroelectric expandable memory, ferroelectric memory, ferroelectric memory sneak paths, multibyte ceramic memory, nonmagnetic memory, piezoelectric/ferroelectric memory.
Citation:
A.B. Kaufman, "An Expandable Ferroelectric Random Access Memory," IEEE Transactions on Computers, vol. 22, no. 2, pp. 154-158, Feb. 1973, doi:10.1109/T-C.1973.223677
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