Issue No.02 - February (1973 vol.22)
A.B. Kaufman , Lockheed Aircraft Corporation
A ferroelectric memory array is described that may be implemented with discrete bits, discrete words, or multiple word components. Binary information is stored as either a positive or negative polarization state in the ferroelectric ceramic material and is read out, with interrogation, by sensing a positive polarity pulse for a " 1" bit, and the lack of a signal for a " 0." The maximum size of the memory is limited only by noise isolation of the bit lines. The array, because of its nonresonant operation, may be interrogated asynchronously. The memory READ/WRITE circuit configuration provides random word access, a device immune to disturb pulses, and compatibility with integrated or discrete circuits. The ceramic material and its configuration provide nonvolatile storage and non-destructive readout. Experimental 5-wordX8-bit discrete word prototype memory array implementations are examined.
Ceramic memory, ferroelectric expandable memory, ferroelectric memory, ferroelectric memory sneak paths, multibyte ceramic memory, nonmagnetic memory, piezoelectric/ferroelectric memory.
A.B. Kaufman, "An Expandable Ferroelectric Random Access Memory", IEEE Transactions on Computers, vol.22, no. 2, pp. 154-158, February 1973, doi:10.1109/T-C.1973.223677