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A High-Speed Threshold Memory Element
September 1968 (vol. 17 no. 9)
pp. 893-894
Abstract?This note describes a new analog-memory or variable- weight device that can be set to any of 100 stable states and switched between states in 100 ns or less. The device uses the coupling between a circularly polarized microwave signal (as generated by a helical structure) and a partially switched ferrite core.
Index Terms:
Index Terms?Adaptive logic device, analog memory, microwave read-out, threshold logic, threshold memory element.
Citation:
R.L. Gamblin, C.J. Tunis, "A High-Speed Threshold Memory Element," IEEE Transactions on Computers, vol. 17, no. 9, pp. 893-894, Sept. 1968, doi:10.1109/TC.1968.229113
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