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26th IEEE VLSI Test Symposium (vts 2008)
Design and Analysis of a Self-Repairing SRAM with On-Chip Monitor and Compensation Circuitry
April 27-May 01
ISBN: 0-7695-3123-7
| ASCII Text | x | ||
| Niladri Narayan Mojumder, Saibal Mukhopadhyay, Jae-Joon Kim, Ching-Te Chuang, Kaushik Roy, "Design and Analysis of a Self-Repairing SRAM with On-Chip Monitor and Compensation Circuitry," VLSI Test Symposium, IEEE, pp. 101-106, 26th IEEE VLSI Test Symposium (vts 2008), 2008. | |||
| BibTex | x | ||
| @article{ 10.1109/VTS.2008.26, author = {Niladri Narayan Mojumder and Saibal Mukhopadhyay and Jae-Joon Kim and Ching-Te Chuang and Kaushik Roy}, title = {Design and Analysis of a Self-Repairing SRAM with On-Chip Monitor and Compensation Circuitry}, journal ={VLSI Test Symposium, IEEE}, volume = {0}, year = {2008}, issn = {1093-0167}, pages = {101-106}, doi = {http://doi.ieeecomputersociety.org/10.1109/VTS.2008.26}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, } | |||
| RefWorks Procite/RefMan/Endnote | x | ||
| TY - CONF JO - VLSI Test Symposium, IEEE TI - Design and Analysis of a Self-Repairing SRAM with On-Chip Monitor and Compensation Circuitry SN - 1093-0167 SP101 EP106 A1 - Niladri Narayan Mojumder, A1 - Saibal Mukhopadhyay, A1 - Jae-Joon Kim, A1 - Ching-Te Chuang, A1 - Kaushik Roy, PY - 2008 KW - Design KW - failure KW - SRAM KW - variation KW - yield VL - 0 JA - VLSI Test Symposium, IEEE ER - | |||
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VTS.2008.26
In an SRAM array, the systematic inter-die and the random within-die variations in process parameters cause significant number of parametric failures, to degrade process yield in the nanometer technology regime. In this paper, we investigate the interaction between the inter-die and intra-die Vt variations on SRAM read and write failures. To improve robustness of SRAM cell, we propose a closed-loop compensation scheme using on-chip monitors that directly sense the global read stability and writability of the cell directly. Computer simulations based on 45nm PD/SOI technology demonstrate the viability and effectiveness of the scheme in SRAM yield enhancement.
Index Terms:
Design, failure, SRAM, variation, yield
Citation:
Niladri Narayan Mojumder, Saibal Mukhopadhyay, Jae-Joon Kim, Ching-Te Chuang, Kaushik Roy, "Design and Analysis of a Self-Repairing SRAM with On-Chip Monitor and Compensation Circuitry," vts, pp.101-106, 26th IEEE VLSI Test Symposium (vts 2008), 2008
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