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20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07)
A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling
Bangalore, India
January 06-January 10
ISBN: 0-7695-2762-0
ASCII Text
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Yogesh Singh Chauhan, Francois Krummenacher, Renuad Gillon, Benoit Bakeroot, Michel Declercq, Adrian Mihai Ionescu, "A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling," VLSI Design, International Conference on, pp. 177-182, 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), 2007.
 
 
BibTex
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@article{ 10.1109/VLSID.2007.15,
author = {Yogesh Singh Chauhan and Francois Krummenacher and Renuad Gillon and Benoit Bakeroot and Michel Declercq and Adrian Mihai Ionescu},
title = {A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling},
journal ={VLSI Design, International Conference on},
volume = {0},
year = {2007},
issn = {1063-9667},
pages = {177-182},
doi = {http://doi.ieeecomputersociety.org/10.1109/VLSID.2007.15},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - VLSI Design, International Conference on
TI - A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling
SN - 1063-9667
SP177
EP182
A1 - Yogesh Singh Chauhan,
A1 - Francois Krummenacher,
A1 - Renuad Gillon,
A1 - Benoit Bakeroot,
A1 - Michel Declercq,
A1 - Adrian Mihai Ionescu,
PY - 2007
KW - null
VL - 0
JA - VLSI Design, International Conference on
ER -
 
Yogesh Singh Chauhan, Institute of Microelectronics and Microsystems, Switzerland
Francois Krummenacher, Institute of Microelectronics and Microsystems, Switzerland
Renuad Gillon, AMI Semiconductor (AMIS), Oudenaarde, Belgium
Benoit Bakeroot, University of Ghent, Ghent, Belgium
Michel Declercq, Institute of Microelectronics and Microsystems, Switzerland
Adrian Mihai Ionescu, Institute of Microelectronics and Microsystems, Switzerland
The Lateral Asymmetric MOSFET, which has longitudinal doping variation in the channel, is the building block of many categories of High Voltage MOSFETs e.g. LDMOS, VDMOS. Here we report a new charge based analytical compact model for Lateral Asymmetric MOSFET (LAMOS). Numerical device simulations are used to validate the intrinsic MOS region of high voltage MOSFET for lateral doping gradient in the channel. The model shows good results in DC and most importantly in AC regime, especially the peaks in CGD, CGS and CGG capacitances. The LAMOS model is also validated along with the drift model on the measured DC characteristics of high voltage LDMOS transistor.
Citation:
Yogesh Singh Chauhan, Francois Krummenacher, Renuad Gillon, Benoit Bakeroot, Michel Declercq, Adrian Mihai Ionescu, "A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling," vlsid, pp.177-182, 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), 2007
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