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2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
Piezoresistive properties of heavily doped P-type polysilicon films
Shenzhen, China
January 05-January 08
ISBN: 978-1-4244-4629-2
ASCII Text
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Xuebin Lu, Xiaowei Liu, Rongyan Chuai, Changzhi Shi, Mingxue Huo, Weiping Chen, "Piezoresistive properties of heavily doped P-type polysilicon films," International Conference on Nano/Micro Engineered and Molecular Systems, pp. 498-501, 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2009.
 
 
BibTex
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@article{ 10.1109/NEMS.2009.5068627,
author = { Xuebin Lu and Xiaowei Liu and Rongyan Chuai and Changzhi Shi and Mingxue Huo and Weiping Chen},
title = {Piezoresistive properties of heavily doped P-type polysilicon films},
journal ={International Conference on Nano/Micro Engineered and Molecular Systems},
volume = {0},
year = {2009},
isbn = {978-1-4244-4629-2},
pages = {498-501},
doi = {http://doi.ieeecomputersociety.org/10.1109/NEMS.2009.5068627},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - International Conference on Nano/Micro Engineered and Molecular Systems
TI - Piezoresistive properties of heavily doped P-type polysilicon films
SN - 978-1-4244-4629-2
SP498
EP501
A1 - Xuebin Lu,
A1 - Xiaowei Liu,
A1 - Rongyan Chuai,
A1 - Changzhi Shi,
A1 - Mingxue Huo,
A1 - Weiping Chen,
PY - 2009
VL - 0
JA - International Conference on Nano/Micro Engineered and Molecular Systems
ER -
 
Xuebin Lu, MEMS Center, Harbin Institute of Technology, China
Xiaowei Liu, MEMS Center, Harbin Institute of Technology, China
Rongyan Chuai, Information Science and Engineering School, Shenyang University of Technology, China
Changzhi Shi, MEMS Center, Harbin Institute of Technology, China
Mingxue Huo, MEMS Center, Harbin Institute of Technology, China
Weiping Chen, MEMS Center, Harbin Institute of Technology, China
The different thickness polysilicon films were prepared by low pressure chemical vapor deposition. The microstructures of samples were observed by X-ray diffraction, scanning electron microscope and transmission electron microscope. The piezoresistive properties of samples were tested. The experimental results show that under high doping concentration, the gauge factor of polysilicon nanofilms is larger than that of common polysilicon films, which can not be explained reasonably by existing piezoresistive theories, but can be well explained by tunneling piezoresistive theory. The experimental results imply that the polysilicon nanofilms is a promising high temperature piezoresistive material.
Citation:
Xuebin Lu, Xiaowei Liu, Rongyan Chuai, Changzhi Shi, Mingxue Huo, Weiping Chen, "Piezoresistive properties of heavily doped P-type polysilicon films," nems, pp.498-501, 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2009
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