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International Test Conference 2001 (ITC'01)
Test cost reduction by at-speed BISR for embedded DRAMs
Baltimore, Maryland
October 30-November 01
ISBN: 0-7803-7171-2
Yoshihiro Nagura, Mitsubishi Electric Corp.
Michael Mullins, Mitsubishi Electronics America, Inc.
Anthony Sauvageau, Mitsubishi Electronics America, Inc.
Yoshinori Fujiwara, Mitsubishi Electric Corp.
Katsuya Furue, Mitsubishi Electric Corp.
Ryuji Ohmura, Mitsubishi Electric Corp.
Tatsunori Komoike, Mitsubishi Electric Corp.
Takenori Okitaka, Mitsubishi Electric Corp.
Tetsushi Tanizaki, Mitsubishi Electric Corp.
Katsumi Dosaka, Mitsubishi Electric Corp.
Kazutami Arimito, Mitsubishi Electric Corp.
Yukiyoshi Koda, Mitsubishi Electric Corp.
Tetsuo Tada, Mitsubishi Electric Corp.
The increase of test time of embedded DRAMs (e-DRAM) is one of the key issues of System-on-chip (SOC) device test. This paper proposes to put the repair analysis function on chip as Built In Self Repair (BISR). BISR is performed at 166MHz as at-speed of e-DRAM with using low cost automatic test equipment (ATE). The area of the BISR is approximately 1.7mm2 about 2% of conventional SOC devices. Using error storage table form contributes to realize small area penalty of repair analysis function. e-DRAM functional test time was reduced about 20% less than conventional method at wafer level testing. Moreover, the results of e-DRAM test and repair analysis using BISR is almost coincident with conventional method.
Citation:
Yoshihiro Nagura, Michael Mullins, Anthony Sauvageau, Yoshinori Fujiwara, Katsuya Furue, Ryuji Ohmura, Tatsunori Komoike, Takenori Okitaka, Tetsushi Tanizaki, Katsumi Dosaka, Kazutami Arimito, Yukiyoshi Koda, Tetsuo Tada, "Test cost reduction by at-speed BISR for embedded DRAMs," itc, pp.182, International Test Conference 2001 (ITC'01), 2001
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