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9th International Symposium on Quality Electronic Design (isqed 2008)
A Root-Finding Method for Assessing SRAM Stability
March 17-March 19
ISBN: 978-0-7695-3117-5
| ASCII Text | x | ||
| Rouwaida Kanj, Zhuo Li, Rajiv Joshi, Frank Liu, Sani Nassif, "A Root-Finding Method for Assessing SRAM Stability," Quality Electronic Design, International Symposium on, pp. 804-809, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008. | |||
| BibTex | x | ||
| @article{ 10.1109/ISQED.2008.23, author = {Rouwaida Kanj and Zhuo Li and Rajiv Joshi and Frank Liu and Sani Nassif}, title = {A Root-Finding Method for Assessing SRAM Stability}, journal ={Quality Electronic Design, International Symposium on}, volume = {0}, year = {2008}, isbn = {978-0-7695-3117-5}, pages = {804-809}, doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.23}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, } | |||
| RefWorks Procite/RefMan/Endnote | x | ||
| TY - CONF JO - Quality Electronic Design, International Symposium on TI - A Root-Finding Method for Assessing SRAM Stability SN - 978-0-7695-3117-5 SP804 EP809 A1 - Rouwaida Kanj, A1 - Zhuo Li, A1 - Rajiv Joshi, A1 - Frank Liu, A1 - Sani Nassif, PY - 2008 KW - sram KW - yield KW - stability KW - roots KW - memory VL - 0 JA - Quality Electronic Design, International Symposium on ER - | |||
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.23
In this paper, we propose a closed form method to evaluate the read stability of an SRAM cell via quartic root finding. By utilizing a simplified MOSFET device model, we model SRAM cell stability by a system of quartic equations. The algebraic nature of the equations along with simplified region boundaries provide the insight that only a few combinations of device operating regions correspond to the stability of the cell, instead of 729 combinations in the brutal force approach. Such an insight not only makes it possible to have a quick “litmus test” to determine cell stability under variability, but also significantly speeds up the analysis, compared to a traditional SPICE approach. Experimental results using industrial bulk CMOS models show that the results are in excellent agreement with SPICE results and 65X faster.
Index Terms:
sram, yield, stability, roots, memory
Citation:
Rouwaida Kanj, Zhuo Li, Rajiv Joshi, Frank Liu, Sani Nassif, "A Root-Finding Method for Assessing SRAM Stability," isqed, pp.804-809, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008
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