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8th International Symposium on Quality Electronic Design (ISQED'07)
Analytical Modeling of Hot-Carrier Induced Degradation of MOS Transistor for Analog Design for Reliability
San Jose, California
March 26-March 28
ISBN: 0-7695-2795-7
| ASCII Text | x | ||
| Benoit Dubois, Jean-Baptiste Kammerer, Luc Hebrard, Francis Braun, "Analytical Modeling of Hot-Carrier Induced Degradation of MOS Transistor for Analog Design for Reliability," Quality Electronic Design, International Symposium on, pp. 53-58, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007. | |||
| BibTex | x | ||
| @article{ 10.1109/ISQED.2007.37, author = {Benoit Dubois and Jean-Baptiste Kammerer and Luc Hebrard and Francis Braun}, title = {Analytical Modeling of Hot-Carrier Induced Degradation of MOS Transistor for Analog Design for Reliability}, journal ={Quality Electronic Design, International Symposium on}, volume = {0}, year = {2007}, isbn = {0-7695-2795-7}, pages = {53-58}, doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2007.37}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, } | |||
| RefWorks Procite/RefMan/Endnote | x | ||
| TY - CONF JO - Quality Electronic Design, International Symposium on TI - Analytical Modeling of Hot-Carrier Induced Degradation of MOS Transistor for Analog Design for Reliability SN - 0-7695-2795-7 SP53 EP58 A1 - Benoit Dubois, A1 - Jean-Baptiste Kammerer, A1 - Luc Hebrard, A1 - Francis Braun, PY - 2007 KW - null VL - 0 JA - Quality Electronic Design, International Symposium on ER - | |||
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2007.37
A CMOS transistor ageing analytical model is presented and the procedure that allows to extract its parameters is proposed in this paper. By using a simple example, we show how such a model can be used to forecast the drifts of the main characteristics of a CMOS circuit. Further, we demonstrate that this model can also be used to help the designer to choose and/or modify a circuit in order to minimize the hot-carrier induced degradations. Simulation results compared to the analytical study are also shown.
Citation:
Benoit Dubois, Jean-Baptiste Kammerer, Luc Hebrard, Francis Braun, "Analytical Modeling of Hot-Carrier Induced Degradation of MOS Transistor for Analog Design for Reliability," isqed, pp.53-58, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007
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