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Sixth International Symposium on Quality of Electronic Design (ISQED'05)
Modeling Within-Die Spatial Correlation Effects for Process-Design Co-Optimization
San Jose, California
March 21-March 23
ISBN: 0-7695-2301-3
Paul Friedberg, University of California, Berkeley, CA
Yu Cao, University of California, Berkeley, CA
Jason Cain, University of California, Berkeley, CA
Ruth Wang, University of California, Berkeley, CA
Jan Rabaey, University of California, Berkeley, CA
Costas Spanos, University of California, Berkeley, CA
Within-die spatial correlation of device parameter values caused by manufacturing variations [1] has a significant impact on circuit performance. Based on experimental and simulation results, we (1) characterize the spatial correlation of gate length over a full-field range of horizontal and vertical separation; (2) develop a rudimentary spatial correlation model; and (3) investigate its impact on the variability of circuit performance.
Citation:
Paul Friedberg, Yu Cao, Jason Cain, Ruth Wang, Jan Rabaey, Costas Spanos, "Modeling Within-Die Spatial Correlation Effects for Process-Design Co-Optimization," isqed, pp.516-521, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005
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