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Sixth International Symposium on Quality of Electronic Design (ISQED'05)
Leakage Current Modeling in PD SOI Circuits
San Jose, California
March 21-March 23
ISBN: 0-7695-2301-3
Mini Nanua, Sun MicroSystems
David Blaauw, University of Michigan
Chanhee Oh, Nascentric Inc.
In this paper we demonstrate the transient behavior of off-state device leakage due to signal switching history in PD SOI devices. We address the leakage modeling for PD SOI circuits taking input switching history into account and demonstrate that the off-state power dissipation is a function of the device input duty cycle due to body voltage variations with switching history in SOI devices. We also demonstrate that the device off-state power dissipation can be 2.4 times higher than the power dissipation calculated with traditional steady state off-state device current.
Citation:
Mini Nanua, David Blaauw, Chanhee Oh, "Leakage Current Modeling in PD SOI Circuits," isqed, pp.113-117, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005
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