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34th International Symposium on Multiple-Valued Logic (ISMVL'04)
A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices
University of Toronto, Toronto, Canada
May 19-May 22
ISBN: 0-7695-2130-4
ASCII Text
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Hiromitsu Kimura, Kostas Pagiamtzis, Ali Sheikholeslami, Takahiro Hanyu, "A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices," Multiple-Valued Logic, IEEE International Symposium on, pp. 340-345, 34th International Symposium on Multiple-Valued Logic (ISMVL'04), 2004.
 
 
BibTex
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@article{ 10.1109/ISMVL.2004.1319965,
author = {Hiromitsu Kimura and Kostas Pagiamtzis and Ali Sheikholeslami and Takahiro Hanyu},
title = {A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices},
journal ={Multiple-Valued Logic, IEEE International Symposium on},
volume = {0},
year = {2004},
issn = {0195-623X},
pages = {340-345},
doi = {http://doi.ieeecomputersociety.org/10.1109/ISMVL.2004.1319965},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
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TY - CONF
JO - Multiple-Valued Logic, IEEE International Symposium on
TI - A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices
SN - 0195-623X
SP340
EP345
A1 - Hiromitsu Kimura,
A1 - Kostas Pagiamtzis,
A1 - Ali Sheikholeslami,
A1 - Takahiro Hanyu,
PY - 2004
KW - null
VL - 0
JA - Multiple-Valued Logic, IEEE International Symposium on
ER -
 
Hiromitsu Kimura, Tohoku University
Kostas Pagiamtzis, University of Toronto
Ali Sheikholeslami, University of Toronto
Takahiro Hanyu, Tohoku University
This paper presents four-valued magnetoresistive RAM (MRAM) storage cells using one access transistor and two binary magnetic tunnel junction (MTJ) devices with the MTJ devices either in series or in parallel. We present a comparative study of the two cells in terms of their area and power benefits over the binary MRAM, all using the same conventional MRAM process.
Citation:
Hiromitsu Kimura, Kostas Pagiamtzis, Ali Sheikholeslami, Takahiro Hanyu, "A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices," ismvl, pp.340-345, 34th International Symposium on Multiple-Valued Logic (ISMVL'04), 2004
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