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2009 15th IEEE International On-Line Testing Symposium
Critical charge characterization in 6-T SRAMs during read mode
Sesimbra-Lisbon, Portugal
June 24-June 26
ISBN: 978-1-4244-4596-7
ASCII Text
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Sebastia Bota, Gabriel Torrens, Bartomeu Alorda, "Critical charge characterization in 6-T SRAMs during read mode," 11th IEEE International On-Line Testing Symposium, pp. 120-125, 2009 15th IEEE International On-Line Testing Symposium, 2009.
 
 
BibTex
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@article{ 10.1109/IOLTS.2009.5195993,
author = {Sebastia Bota and Gabriel Torrens and Bartomeu Alorda},
title = {Critical charge characterization in 6-T SRAMs during read mode},
journal ={11th IEEE International On-Line Testing Symposium},
volume = {0},
year = {2009},
isbn = {978-1-4244-4596-7},
pages = {120-125},
doi = {http://doi.ieeecomputersociety.org/10.1109/IOLTS.2009.5195993},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - 11th IEEE International On-Line Testing Symposium
TI - Critical charge characterization in 6-T SRAMs during read mode
SN - 978-1-4244-4596-7
SP120
EP125
A1 - Sebastia Bota,
A1 - Gabriel Torrens,
A1 - Bartomeu Alorda,
PY - 2009
VL - 0
JA - 11th IEEE International On-Line Testing Symposium
ER -
 
Sebastia Bota, Jaume Segura Grup de Sistemes Electronics. Balearic Islands University Carretera de Valldemossa km 7.5. 07122 Palma de Mallorca (Spain)
Gabriel Torrens, Jaume Segura Grup de Sistemes Electronics. Balearic Islands University Carretera de Valldemossa km 7.5. 07122 Palma de Mallorca (Spain)
Bartomeu Alorda, Jaume Segura Grup de Sistemes Electronics. Balearic Islands University Carretera de Valldemossa km 7.5. 07122 Palma de Mallorca (Spain)
In this work we analyze the effects of radiation-induced transient pulses on 6T SRAM cells operating in read mode. The critical charge of a memory cell during read mode is lower than in hold mode. For 1 to 0 upsets, this reduction reaches a factor x1.5 for events produced by alpha particles; this factor is even higher for longer induced current pulses. The impact of events propagated through the bit-lines is also analyzed. Results show that it is possible the occurrence of an upset in the Sense Amplifier producing a wrong output in the readout process without changing the memory cell stored value.
Citation:
Sebastia Bota, Gabriel Torrens, Bartomeu Alorda, "Critical charge characterization in 6-T SRAMs during read mode," iolts, pp.120-125, 2009 15th IEEE International On-Line Testing Symposium, 2009
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