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2009 15th IEEE International On-Line Testing Symposium
Novel DRAM mitigation technique
Sesimbra-Lisbon, Portugal
June 24-June 26
ISBN: 978-1-4244-4596-7
| ASCII Text | x | ||
| A. Bougerol, F. Miller, N. Buard, "Novel DRAM mitigation technique," 11th IEEE International On-Line Testing Symposium, pp. 109-113, 2009 15th IEEE International On-Line Testing Symposium, 2009. | |||
| BibTex | x | ||
| @article{ 10.1109/IOLTS.2009.5195991, author = {A. Bougerol and F. Miller and N. Buard}, title = {Novel DRAM mitigation technique}, journal ={11th IEEE International On-Line Testing Symposium}, volume = {0}, year = {2009}, isbn = {978-1-4244-4596-7}, pages = {109-113}, doi = {http://doi.ieeecomputersociety.org/10.1109/IOLTS.2009.5195991}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, } | |||
| RefWorks Procite/RefMan/Endnote | x | ||
| TY - CONF JO - 11th IEEE International On-Line Testing Symposium TI - Novel DRAM mitigation technique SN - 978-1-4244-4596-7 SP109 EP113 A1 - A. Bougerol, A1 - F. Miller, A1 - N. Buard, PY - 2009 VL - 0 JA - 11th IEEE International On-Line Testing Symposium ER - | |||
This paper describes a novel patented radiation mitigation technique for DRAM cell memories. Because of their non-symmetrical structure, only one state is sensitive to radiations. This particular property is used to detect and correct upsets. Several fault-tolerant architectures are proposed, which are able to detect and correct all SEU/ MBU in a word, whatever its length. Overhead in term of additional memory cells is lower than other classical mitigation techniques.
Citation:
A. Bougerol, F. Miller, N. Buard, "Novel DRAM mitigation technique," iolts, pp.109-113, 2009 15th IEEE International On-Line Testing Symposium, 2009
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