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Sesimbra-Lisbon, Portugal
June 24, 2009 to June 26, 2009
ISBN: 978-1-4244-4596-7
pp: 109-113
A. Bougerol , EADS IW, the European Aeronautic Defense and Space Company, Innovation Works, 12 rue Pasteur, 92150, Suresnes, France
F. Miller , EADS IW, the European Aeronautic Defense and Space Company, Innovation Works, 12 rue Pasteur, 92150, Suresnes, France
N. Buard , EADS IW, the European Aeronautic Defense and Space Company, Innovation Works, 12 rue Pasteur, 92150, Suresnes, France
ABSTRACT
This paper describes a novel patented radiation mitigation technique for DRAM cell memories. Because of their non-symmetrical structure, only one state is sensitive to radiations. This particular property is used to detect and correct upsets. Several fault-tolerant architectures are proposed, which are able to detect and correct all SEU/ MBU in a word, whatever its length. Overhead in term of additional memory cells is lower than other classical mitigation techniques.
CITATION
A. Bougerol, F. Miller, N. Buard, "Novel DRAM mitigation technique", IOLTS, 2009, 11th IEEE International On-Line Testing Symposium, 11th IEEE International On-Line Testing Symposium 2009, pp. 109-113, doi:10.1109/IOLTS.2009.5195991
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