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IEEE-INNS-ENNS International Joint Conference on Neural Networks (IJCNN'00)-Volume 4
A Modular Neural Network for Global Modeling of Microwave Transistors
Como, Italy
July 24-July 27
ISBN: 0-7695-0619-4
| ASCII Text | x | ||
| M. Lázaro, I. Santamaría, C. Pantaleón, C. Navarro, A. Tazón, T. Fernández, "A Modular Neural Network for Global Modeling of Microwave Transistors," Neural Networks, IEEE - INNS - ENNS International Joint Conference on, vol. 4, pp. 4389, IEEE-INNS-ENNS International Joint Conference on Neural Networks (IJCNN'00)-Volume 4, 2000. | |||
| BibTex | x | ||
| @article{ 10.1109/IJCNN.2000.860803, author = {M. Lázaro and I. Santamaría and C. Pantaleón and C. Navarro and A. Tazón and T. Fernández}, title = {A Modular Neural Network for Global Modeling of Microwave Transistors}, journal ={Neural Networks, IEEE - INNS - ENNS International Joint Conference on}, volume = {4}, year = {2000}, issn = {1098-7576}, pages = {4389}, doi = {http://doi.ieeecomputersociety.org/10.1109/IJCNN.2000.860803}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, } | |||
| RefWorks Procite/RefMan/Endnote | x | ||
| TY - CONF JO - Neural Networks, IEEE - INNS - ENNS International Joint Conference on TI - A Modular Neural Network for Global Modeling of Microwave Transistors SN - 1098-7576 SP EP A1 - M. Lázaro, A1 - I. Santamaría, A1 - C. Pantaleón, A1 - C. Navarro, A1 - A. Tazón, A1 - T. Fernández, PY - 2000 VL - 4 JA - Neural Networks, IEEE - INNS - ENNS International Joint Conference on ER - | |||
In this paper, we present a modular neural network structure for global modeling of microwave transistors (MESFET/HEMT). The model is able to accurately represent both, the small signal and the large-signal behavior of the device. This is achieved by means of an original neural architecture, which is composed of two main modules. The first module captures the nonlinear dynamic I/V characteristic of the transistor, which governs the large signal behavior of the device. The second module estimates the derivatives at the operation (bias) point by means of a neural network and then it locally reconstructs the function by means of a third order Taylor series around that point. This second module is able to reproduce the small-signal inter-modulation behavior. These two modules are combined into a global model by means of a simple fuzzy controller. In this way, the global model represents adequately the device behavior independently of the nature of the applied signals.
Citation:
M. Lázaro, I. Santamaría, C. Pantaleón, C. Navarro, A. Tazón, T. Fernández, "A Modular Neural Network for Global Modeling of Microwave Transistors," ijcnn, vol. 4, pp.4389, IEEE-INNS-ENNS International Joint Conference on Neural Networks (IJCNN'00)-Volume 4, 2000
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