- I
- ICASSP
- 1993
- Acoustics, Speech, and Signal Processing, 1993. ICASSP-93 Vol 5., 1993 IEEE International Conference on
| | This Publication | | | | | | | |
| | | | Bibliographic References | | | |
| | | | |
Acoustics, Speech, and Signal Processing, 1993. ICASSP-93 Vol 5., 1993 IEEE International Conference on Minneapolis, MN, USA April 27-April 30 ISBN: 0-7803-0946-4 Table of Contents
F.R. Chen, Xerox Palo Alto Res. Center, CA, USA pp. 1-4vol.5
I.B. Kerfoot, Beckman Inst., Illinois Univ., Urbana, IL, USA
Y. Bresler, Beckman Inst., Illinois Univ., Urbana, IL, USA pp. 5-8vol.5
P.-K. Ser, Dept. of Electron. Eng., Hong Kong Polytech., Hong Kong
W.-C. Siu, Dept. of Electron. Eng., Hong Kong Polytech., Hong Kong pp. 9-12vol.5
B. Wang, Eng. Math. & Comput. Sci. Dept., Louisville Univ., KY, USA
D.M. Rose, Eng. Math. & Comput. Sci. Dept., Louisville Univ., KY, USA
A.A. Farag, Eng. Math. & Comput. Sci. Dept., Louisville Univ., KY, USA pp. 13-16vol.5
F. Marques, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain
J. Cunillera, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain
A. Gasull, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain pp. 17-20vol.5
J.-L. Chen, Dept. of Biophys. Sci., State Univ. of New York, Buffalo, NY, USA
A. Kundu, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain pp. 21-24vol.5
F. Pedersini, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain
L. Sorcinelli, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain pp. 25-28vol.5
I. Pitas, Dept. of Electr. Eng., Thessaloniki Univ., Greece
A. Maglara, Dept. of Electr. Eng., Thessaloniki Univ., Greece pp. 29-32vol.5
M.M. Chang, Electr. Eng. Dept., Rochester Univ., NY, USA
A.M. Tekalp, Electr. Eng. Dept., Rochester Univ., NY, USA
M.I. Sezan, Dept. of Electr. Eng., Thessaloniki Univ., Greece pp. 33-36vol.5
D.F. Dunn, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
W.E. Higgins, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA pp. 37-40vol.5
M.R. Luettgen, MIT Lab. for Inf. & Decision Syst., Cambridge, MA, USA
W.C. Karl, MIT Lab. for Inf. & Decision Syst., Cambridge, MA, USA
A.S. Willsky, MIT Lab. for Inf. & Decision Syst., Cambridge, MA, USA pp. 41-44vol.5
P. Salembier, Dept. of Signal Theory & Com., Univ. of Politecnica de Catalunya, Barcelona, Spain
J. Serra, MIT Lab. for Inf. & Decision Syst., Cambridge, MA, USA
J.A. Bangham, MIT Lab. for Inf. & Decision Syst., Cambridge, MA, USA pp. 45-48vol.5
P.A. Kelly, Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
G. Chen, Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA pp. 49-52vol.5
F. Heil, Kaiserslautern Univ., Germany pp. 53-56vol.5
M.A. Schulze, Dept. of Electr. Eng., Texas Univ., Austin, TX, USA
J.A. Pearce, Dept. of Electr. Eng., Texas Univ., Austin, TX, USA pp. 57-60vol.5
Gaofeng Wang, Dept. of Electr. Eng. & Comput. Sci., Wisconsin Univ., Milwaukee, WI, USA
J. Zhang, Dept. of Electr. Eng. & Comput. Sci., Wisconsin Univ., Milwaukee, WI, USA
G.W. Pan, Dept. of Electr. Eng. & Comput. Sci., Wisconsin Univ., Milwaukee, WI, USA pp. 61-64vol.5
S.A. Martucci, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
R.M. Mersereau, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA pp. 65-68vol.5
L. Akarun, Electr. Eng. Dept., Bogazici Univ., Istanbul, Turkey
R.A. Haddad, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA pp. 69-72vol.5
A.I. El-Fallah, Center for Image Process. & Integrated Comput., California Univ., Davis, CA, USA
G.E. Ford, Center for Image Process. & Integrated Comput., California Univ., Davis, CA, USA pp. 73-76vol.5
M.R. Zaman, Fac. of Eng. & Appl. Sci., Memorial Univ. of Newfoundland, St. John's, Nfld., Canada
C.R. Moloney, Fac. of Eng. & Appl. Sci., Memorial Univ. of Newfoundland, St. John's, Nfld., Canada pp. 77-80vol.5
S.-s. Kuo, AT&T Bell Lab., Murray Hill, NJ, USA pp. 81-84vol.5
P.A. Chou, Xerox Palo Alto Res. Center, CA, USA pp. 85-88vol.5
H.K. Aghajan, Dept. of Electr. Eng., Stanford Univ., CA, USA
T. Kailath, Dept. of Electr. Eng., Stanford Univ., CA, USA pp. 89-92vol.5
K.A. Bartels, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
A.C. Bovik, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA pp. 93-96vol.5
P.-F. Yang, Div. of Appl. Sci., Harvard Univ., Cambridge, MA, USA
P. Maragos, Div. of Appl. Sci., Harvard Univ., Cambridge, MA, USA pp. 97-100vol.5
C.W. Chen, Dept. of Electr. Eng., Rochester Univ., NY, USA
J. Luo, Dept. of Electr. Eng., Rochester Univ., NY, USA
T.S. Huang, Dept. of Electr. Eng. & Comput. Sci., Wisconsin Univ., Milwaukee, WI, USA pp. 101-104vol.5
M.-Y. Chen, CEDAR, State Univ. of New York, Amherst, NY, USA
A. Kundu, Dept. of Electr. Eng., Rochester Univ., NY, USA
S.N. Srihari, Dept. of Electr. Eng. & Comput. Sci., Wisconsin Univ., Milwaukee, WI, USA pp. 105-108vol.5
S.-S. Kuo, AT&T Bell Lab., Murray Hill, NJ, USA
E. Levin, AT&T Bell Lab., Murray Hill, NJ, USA pp. 113-116vol.5
A.K. Muhamad, Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
F. Deravi, Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK pp. 117-120vol.5
K.S. Nathan, IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
D. Nahamoo, IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA pp. 121-124vol.5
J.M. Reinhardt, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
W.E. Higgins, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA pp. 125-128vol.5
T. Greiner, Dept. of Electr. Eng., Kaiserslautern Univ., Germany
J.P. Casel, Dept. of Electr. Eng., Kaiserslautern Univ., Germany
M. Pandit, Dept. of Electr. Eng., Kaiserslautern Univ., Germany pp. 129-132vol.5
K. Aizawa, Dept. of Electr. Eng., Tokyo Univ., Bunkyo-ku, Tokyo, Japan
T. Komatsu, Dept. of Electr. Eng., Kaiserslautern Univ., Germany
T. Saito, Dept. of Electr. Eng., Kaiserslautern Univ., Germany
M. Hatori, IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA pp. 133-136vol.5
Z. Kato, INRIA, Sophia Antipolis, France pp. 137-140vol.5
G.S. Desoli, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
D.D. Giusto, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
G. Vernazza, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy pp. 141-144vol.5
J. Ben-Arie, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
K.R. Rao, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA pp. 145-148vol.5
M. Unser, Nat. Inst. of Health, Bethesda, MD, USA pp. 149-152vol.5
S.P. Kim, Dept. of Electr. Eng., Polytech. Univ., Brooklyn, NY, USA
W.Y. Su, Dept. of Electr. Eng., Polytech. Univ., Brooklyn, NY, USA pp. 153-156vol.5
Y.S. Yao, Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
R. Chellappa, Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA pp. 157-160vol.5
T. Kabir, Media Lab., MIT, Cambridge, MA, USA pp. 161-164vol.5
R. Lenz, Auditory & Visuual Perception Lab., Adv. Telecommun. Res. Inst., Soraku-gun, Kyoto, Japan pp. 165-168vol.5
D.M. Monro, Sch. of Electron. & Electr. Eng., Bath Univ., UK pp. 169-172vol.5
H. Cha, Dept. of Electr. Eng., Pittsburgh Univ., PA, USA pp. 173-176vol.5
S.W. Lee, Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
J.K. Paik, Dept. of Electr. Eng., Pittsburgh Univ., PA, USA pp. 177-180vol.5
J. Zhong, Beckman Inst., Illinois Univ., Urbana, IL, USA
R.J. Adrian, Beckman Inst., Illinois Univ., Urbana, IL, USA
T.S. Huang, Beckman Inst., Illinois Univ., Urbana, IL, USA pp. 181-184vol.5
G.A. Mian, Dipartimento di Elettronica e Inf., Padova, Italy pp. 185-188vol.5
P. Moulin, Bell Commun. Res., Morristown, NJ, USA pp. 189-192vol.5
C. Stiller, Inst. for Commun. Eng., Aachen Univ. of Technol., Germany pp. 193-196vol.5
J. Zhang, Electr. Eng. & Comput. Sci. Dept., Wisconsin Univ., Milwaukee, WI, USA
J. Hanauer, Electr. Eng. & Comput. Sci. Dept., Wisconsin Univ., Milwaukee, WI, USA pp. 197-200vol.5
Q. Zheng, Maryland Univ., College Park, MD, USA pp. 201-204vol.5
S.L. Iu, Panasonic Adv. TV-Video Lab., Inc., Burlington, NJ, USA
E.C. Wu, Panasonic Adv. TV-Video Lab., Inc., Burlington, NJ, USA pp. 205-208vol.5
I.M. Abdelqader, Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
S.A. Rajala, Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
W.E. Snyder, Dipartimento di Elettronica e Inf., Padova, Italy pp. 209-212vol.5
A. Kojima, NTT Network Inf. Syst. Lab., Take, Yokosuka, Japan
N. Sakurai, NTT Network Inf. Syst. Lab., Take, Yokosuka, Japan pp. 213-216vol.5
C.K. Cheong, Dept. of Electr. Eng., Tokyo Univ., Bunkyo-Ku, Tokyo, Japan
K. Alizawa, Dept. of Electr. Eng., Tokyo Univ., Bunkyo-Ku, Tokyo, Japan
T. Saito, Dipartimento di Elettronica e Inf., Padova, Italy
M. Hatori, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy pp. 217-220vol.5
E.H. Adelson, Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
J.L. Prince, Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA pp. 225-228vol.5
A. Nosratinia, Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
M.T. Orchard, Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA pp. 229-232vol.5
R.Y. Wang, Washington Univ., Seattle, WA, USA
R. Ladner, Washington Univ., Seattle, WA, USA pp. 233-236vol.5
L. Torres, ETSIT-U Univ. Politecnica de Catalunya, Barcelona, Spain
J. Salillas, ETSIT-U Univ. Politecnica de Catalunya, Barcelona, Spain pp. 237-240vol.5
K.L. Oehler, Dept. of Electr. Eng., Stanford Univ., CA, USA
R.M. Gray, Dept. of Electr. Eng., Stanford Univ., CA, USA pp. 241-244vol.5
N. Mohsenian, Dept. of Electr. Eng., Princeton Univ., NJ, USA pp. 245-248vol.5
P. Formenti, Dept. of Electr. Eng., Stanford Univ., CA, USA pp. 249-252vol.5
L. Lu, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
W.A. Pearlman, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA pp. 253-256vol.5
L.M. Po, Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong pp. 257-260vol.5
A.J. Patti, Electr. Eng. Dept., Rochester Univ., NY, USA
M.K. Ozkan, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
M.I. Sezan, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy pp. 261-264vol.5
N.K. Bose, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
H.C. Kim, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
H.M. Valenzuela, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA pp. 269-272vol.5
J.C. Brailean, Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
A.K. Katsaggelos, Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA pp. 273-276vol.5
P. Nasiopoulos, Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
R.K. Ward, Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada pp. 277-280vol.5
M.R. Banham, Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
H. Gonzalez, Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
N.P. Galatsanos, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA pp. 281-284vol.5
Y.L. You, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
M. Kaveh, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA pp. 285-288vol.5
M.E. Zervakis, Dept. of Comput. Eng., Minnesota Univ., Duluth, MN, USA
T.M. Kwon, Dept. of Comput. Eng., Minnesota Univ., Duluth, MN, USA pp. 289-292vol.5
R.P. Kleihorst, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
R.L. Lagendijk, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
J. Biemond, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands pp. 293-296vol.5
P.L. Combettes, Dept. of Electr. Eng., City Univ. of New York, NY, USA
H. Puh, Dept. of Electr. Eng., City Univ. of New York, NY, USA pp. 297-300vol.5
T. Mitsa, Dept. of Electr. & Comput. Eng., Iowa Univ., Iowa City, IA, USA
K.L. Varkur, Dept. of Electr. & Comput. Eng., Iowa Univ., Iowa City, IA, USA pp. 301-304vol.5
R. Soininen, Signal Process Lab., Tampere Univ. of Technol., Finland
I. Defee, Signal Process Lab., Tampere Univ. of Technol., Finland
Y. Neuvo, Signal Process Lab., Tampere Univ. of Technol., Finland pp. 305-308vol.5
S. Hein, Siemens AG, Munchen, Germany
A. Zakhor, Signal Process Lab., Tampere Univ. of Technol., Finland pp. 309-312vol.5
M.J. Vrhel, Electr. & Comput. Eng. Dept., North Carolina State Univ., Raleigh, NC, USA
H.J. Trussell, Electr. & Comput. Eng. Dept., North Carolina State Univ., Raleigh, NC, USA pp. 313-316vol.5
Z. Fan, Xerox Corp., Webster, NY, USA pp. 321-324vol.5
Y. Chen, Merck & Co., Rahway, NJ, USA
W. Bender, Signal Process Lab., Tampere Univ. of Technol., Finland pp. 325-328vol.5
A. Bist, Dept. of Electr. Eng., Hawaii Univ., HI, USA
C. Podilchuk, Signal Process Lab., Tampere Univ. of Technol., Finland pp. 329-332vol.5
S. Lepsoy, Dept. of Telecommun., Norwegian Inst. of Technol., Trondheim, Norway
G.E. Oien, Dept. of Telecommun., Norwegian Inst. of Technol., Trondheim, Norway
T.A. Ramstad, Dept. of Telecommun., Norwegian Inst. of Technol., Trondheim, Norway pp. 337-340vol.5
L. Thomas, Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
F. Deravi, Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK pp. 341-344vol.5
T.S. Huang, Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA pp. 345-348vol.5
G. Vines, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
G. Vines, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA pp. 349-352vol.5
W. Li, Signal Process. Lab., Swiss Federal Inst. of Technol., Lausanne, Switzerland
F.X. Mateo, Signal Process. Lab., Swiss Federal Inst. of Technol., Lausanne, Switzerland pp. 357-360vol.5
D. Tretter, Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
C. Bouman, Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA pp. 361-364vol.5
P. Su, Dept. of Electr. Eng., Imperial Coll. of Sci. Technol. & Med., London, UK pp. 365-368vol.5
S.L. Eddins, EECS Dept., Illinois Univ., Chicago, IL, USA pp. 369-372vol.5
D. Shah, Dept. of EEE, Strathclyde Univ., Glasgow, UK
S. Marshall, Dept. of EEE, Strathclyde Univ., Glasgow, UK
W.J. Welsh, Dept. of Telecommun., Norwegian Inst. of Technol., Trondheim, Norway pp. 373-376vol.5
A. Zaccarin, Dept. de Genie Electr., Laval Univ., Quebec, Que., Canada
B. Liu, Dept. of EEE, Strathclyde Univ., Glasgow, UK pp. 377-380vol.5
A. Ortega, Dept. of Electr. Eng., Columbia Univ., NY, USA
M. Vetterli, Dept. of Electr. Eng., Columbia Univ., NY, USA pp. 381-384vol.5
K.M. Uz, David Sarnoff Res. Center, Princeton, NJ, USA
M. Czigler, David Sarnoff Res. Center, Princeton, NJ, USA pp. 385-388vol.5
S.W. Wu, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
A. Gersho, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA pp. 389-392vol.5
B. Zeng, Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowlooon, Hong Kong pp. 393-396vol.5
N. Farvardin, Electr. Eng. Dept., Maryland Univ. College Park, MD, USA
X. Ran, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
C.C. Lee, David Sarnoff Res. Center, Princeton, NJ, USA pp. 397-400vol.5
Y. Yang, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
N.P. Galatsanos, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA pp. 405-408vol.5
G.S. Desoli, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
S. Fioravanti, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
D.D. Giusto, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy pp. 409-412vol.5
B. DeCleene, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
H. Sorensen, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA pp. 413-416vol.5
W.M. Lam, Dept. of Electr. Eng., Princeton Univ., NJ, USA
A.R. Reibman, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
B. Liu, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy pp. 417-420vol.5
S.F. Chang, Dept. of EECS, California Univ., Berkeley, CA, USA pp. 421-424vol.5
L.W. Lee, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
J.F. Wang, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
J.Y. Lee, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
C.C. Chen, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan pp. 425-428vol.5
S. Liu, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
M. Hayes, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA pp. 429-432vol.5
J. Huang, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
R.M. Mersereau, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA pp. 433-436vol.5
H. Li, Dept. of Electr. Eng., Linkoping Univ., Sweden pp. 441-444vol.5
B.L. Douglas, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
H. Lee, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA pp. 445-448vol.5
B.L. Robertson, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
B.L. Robertson, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA pp. 449-452vol.5
M.S. D'Errico, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
B.L. Douglas, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
H. Lee, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA pp. 453-456vol.5
G.E. Mailloux, Inst. de Genie Biomed., Ecole Polytech. de Montreal, Que., Canada
R. Noumeir, Inst. de Genie Biomed., Ecole Polytech. de Montreal, Que., Canada
R. Lemieux, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA pp. 457-460vol.5
M.F. Griffin, Syst. Sci. Dept., Tokyo Inst. of Technol., Yokohama, Japan
E.C. Boman, Inst. de Genie Biomed., Ecole Polytech. de Montreal, Que., Canada
I. Metal, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
L.P. Orwig, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan pp. 461-464vol.5
M. Soumekh, Dept. of Electr. & Comput. Eng., State Univ. of New York at Buffalo, Amherst, NY, USA
S. Nugroho, Dept. of Electr. & Comput. Eng., State Univ. of New York at Buffalo, Amherst, NY, USA
S. Jones, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
R. Rysdyk, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan pp. 465-468vol.5
R. Noumeir, Inst. de Genie Biomed., Ecole Polytech. de Montreal, Que., Canada
G.E. Mailloux, Inst. de Genie Biomed., Ecole Polytech. de Montreal, Que., Canada
R. Lemieux, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA pp. 469-472vol.5
F.A. Baqai, Dept. of Electr. & Electron. Eng., Melbourne Univ., Parkville, Vic., Australia
Y. Hua, Dept. of Electr. & Electron. Eng., Melbourne Univ., Parkville, Vic., Australia pp. 473-476vol.5
J. Hui, Inst. of Acoust., Acad. Sinica, Beijing, China
H.C. Huan, Inst. of Acoust., Acad. Sinica, Beijing, China pp. 477-480vol.5
H.-J. Eom, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan pp. 481-482vol.5
J.L. Prince, Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA pp. 483-486vol.5
Y. Bresler, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
N.P. Willis, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA pp. 487-490vol.5
M. Barlaud, Univ. de Nice-Sophia Antipolis, Valbonne, France pp. 491-494vol.5
A. Mohammad-Djafari, Lab. des Signaux et Syst., Ecole Superieure d'Electr., Gif-sur-Yvette, France pp. 495-498vol.5
C. Klifa, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
K. Sauer, Dept. of Electr. Eng., Notre Dame Univ., IN, USA pp. 499-502vol.5
X.-L. Xu, Dept. of Radiol., Minnesota Univ., Minneapolis, MN, USA
J.-S. Liow, Dept. of Radiol., Minnesota Univ., Minneapolis, MN, USA
S.C. Strother, Dept. of Radiol., Minnesota Univ., Minneapolis, MN, USA pp. 503-506vol.5
X. Hu, Minnesota Univ., Minneapolis, MN, USA pp. 507-510vol.5
A.S. Belmont, Beckman Inst., Illinois Univ., Urbana, IL, USA
I.B. Kerfoot, Beckman Inst., Illinois Univ., Urbana, IL, USA pp. 515-518vol.5
G. Potamianos, Dept. of Electr. & Comput. Eng., John Hopkins Univ., Baltimore, MD, USA
J. Goutsias, Dept. of Electr. & Comput. Eng., John Hopkins Univ., Baltimore, MD, USA pp. 519-522vol.5
A.H. Sayed, Inf. Syst. Lab., Stanford Univ., CA, USA
T. Kailath, Inf. Syst. Lab., Stanford Univ., CA, USA pp. 523-526vol.5
T. Chen, Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
P.P. Vaidyanathan, Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA pp. 527-530vol.5
N.D. Sinha, Sch. of Electr. Eng. & Comput. Sci., Polytech. Univ., Brooklyn, NY, USA
R.A. Haddad, Sch. of Electr. Eng. & Comput. Sci., Polytech. Univ., Brooklyn, NY, USA pp. 531-534vol.5
T. Hinamoto, Fac. of Eng., Hiroshima Univ., Higashi-Hiroshima, Japan pp. 535-538vol.5
H.-C. Lu, Dept. of Electr. Eng., Tatung Inst. of Technol., Taipei, Taiwan
K.-S. Yeh, Dept. of Electr. Eng., Tatung Inst. of Technol., Taipei, Taiwan pp. 539-542vol.5
Z. Xiong, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
N.P. Galatsanos, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA pp. 546-549vol.5
O. Rioul, France Telecom. Issy-Les-Moulineaux, France pp. 550-553vol.5
P. Sriram, Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
M.W. Marcellin, Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA pp. 554-557vol.5
S.O. Aase, Div. of Telecommun., Norwegian Inst. Technol., Trondheim, Norway
T.A. Ramstad, Div. of Telecommun., Norwegian Inst. Technol., Trondheim, Norway pp. 566-569vol.5
W.C. Chung, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
M.J.T. Smith, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA pp. 570-573vol.5
E. Chang, California Univ., Berkeley, CA, USA
A. Zahkor, California Univ., Berkeley, CA, USA pp. 574-577vol.5
E. Ramirez, Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
V. Vaishampayan, Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA pp. 578-581vol.5
J.W. Woods, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
T. Naveen, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA pp. 582-585vol.5
G. Poggi, Dipartimento di Ingegneria Elettronica, Napoli Univ., Italy
E. Sasso, Dipartimento di Ingegneria Elettronica, Napoli Univ., Italy pp. 586-589vol.5
M. Barlaud, Univ. de Nice-Sophia Antipolis, Valbonne, France
P. Sole, Univ. de Nice-Sophia Antipolis, Valbonne, France
M. Antonini, Univ. de Nice-Sophia Antipolis, Valbonne, France
P. Gauthier, Univ. de Nice-Sophia Antipolis, Valbonne, France pp. 590-593vol.5
W.J. Zeng, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Y.F. Huang, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
S.C. Huang, Univ. de Nice-Sophia Antipolis, Valbonne, France pp. 594-597vol.5
C.F. Barnes, Georgia Inst. of Technol., Atlanta, GA, USA pp. 598-601vol.5
D. Hui, Georgia Inst. of Technol., Atlanta, GA, USA pp. 602-605vol.5
C. Lo, Dept. of Electr. Eng.-Syst., Univ. of Southern California, Los Angeles, CA, USA pp. 606-608vol.5
W. Li, EECS Dept., Lehigh Univ., Bethlehem, PA, USA
Y.-Q. Zhang, Georgia Inst. of Technol., Atlanta, GA, USA pp. 609-612vol.5
T. Naveen, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
J.W. Woods, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA pp. 613-616vol.5
D. Chiang, Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
L.C. Potter, Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA pp. 617-620vol.5
J.M.F. Moura, Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA pp. 621-624vol.5
G.H. Wakefield, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
B.J. Feng, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
K.R. Raghavan, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
M.A. Blommer, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA pp. 626-629vol.5
H.H. Bothe, Dept. of Electron. Tech. Univ. of Berlin, Germany
F. Rieger, Dept. of Electron. Tech. Univ. of Berlin, Germany pp. 634-637vol.5
C. Banga, Groupe Image, Inst. Nat. des Telecommun., Villeneuve d'Ascq, France
F. Ghorbel, Groupe Image, Inst. Nat. des Telecommun., Villeneuve d'Ascq, France pp. 638-641vol.5
A.O. Asadi, NYNEX Sci. & Technol., Inc., White Plains, NY, USA
H.C. Leung, NYNEX Sci. & Technol., Inc., White Plains, NY, USA pp. 642-645vol.5
M.K. Asi, The Higher Inst. for Appl. Sci. & Technol., Damascus, Syria
M. Mrayati, The Higher Inst. for Appl. Sci. & Technol., Damascus, Syria pp. 646-649vol.5
P. Senn, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA pp. 650-653vol.5
S.G. Bakamidis, Dept. of Electr. Eng., Nat. Tech. Univ. of Athens, Greece pp. 658-661vol.5
Z. Berman, Electr. Eng. Dept., Maryland Univ., College Park, MD, USA
J.S. Baras, Electr. Eng. Dept., Maryland Univ., College Park, MD, USA pp. 662-665vol.5
N. Takai, Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci. Technol. & Med., London, UK
A. Manikas, Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci. Technol. & Med., London, UK pp. 666-669vol.5
C. Demeure, Thomson-CSF/RGS/STS, Gennevilliers, France pp. 670-673vol.5
F. Bosveld, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
R.L. Lagendijk, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
J. Biemond, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands pp. 674-677vol.5
N. Niki, Tokushima Univ., Minami-josanjima-cho, Japan
F. Masakiyo, Tokushima Univ., Minami-josanjima-cho, Japan
I. Tamura, Univ. de Nice-Sophia Antipolis, Valbonne, France pp. 678-681vol.5 Usage of this product signifies your acceptance of the Terms of Use.
| | | | | | | |
