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Acoustics, Speech, and Signal Processing, 1993. ICASSP-93 Vol 5., 1993 IEEE International Conference on
Minneapolis, MN, USA
April 27-April 30
ISBN: 0-7803-0946-4
Table of Contents
F.R. Chen, Xerox Palo Alto Res. Center, CA, USA
L.D. Wilcox, Xerox Palo Alto Res. Center, CA, USA
D.S. Bloomberg, Xerox Palo Alto Res. Center, CA, USA
pp. 1-4vol.5
I.B. Kerfoot, Beckman Inst., Illinois Univ., Urbana, IL, USA
Y. Bresler, Beckman Inst., Illinois Univ., Urbana, IL, USA
pp. 5-8vol.5
P.-K. Ser, Dept. of Electron. Eng., Hong Kong Polytech., Hong Kong
W.-C. Siu, Dept. of Electron. Eng., Hong Kong Polytech., Hong Kong
pp. 9-12vol.5
B. Wang, Eng. Math. & Comput. Sci. Dept., Louisville Univ., KY, USA
D.M. Rose, Eng. Math. & Comput. Sci. Dept., Louisville Univ., KY, USA
A.A. Farag, Eng. Math. & Comput. Sci. Dept., Louisville Univ., KY, USA
pp. 13-16vol.5
F. Marques, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain
J. Cunillera, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain
A. Gasull, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain
pp. 17-20vol.5
J.-L. Chen, Dept. of Biophys. Sci., State Univ. of New York, Buffalo, NY, USA
A. Kundu, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain
pp. 21-24vol.5
P. Migliorati, CEFRIEL, Milano, Italy
F. Pedersini, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain
L. Sorcinelli, Dept. Teoria de la Senal y Commun., E.T.S.E.T.B.-U.P.C., Barcelona, Spain
pp. 25-28vol.5
C. Kotropoulos, Dept. of Electr. Eng., Thessaloniki Univ., Greece
I. Pitas, Dept. of Electr. Eng., Thessaloniki Univ., Greece
A. Maglara, Dept. of Electr. Eng., Thessaloniki Univ., Greece
pp. 29-32vol.5
M.M. Chang, Electr. Eng. Dept., Rochester Univ., NY, USA
A.M. Tekalp, Electr. Eng. Dept., Rochester Univ., NY, USA
M.I. Sezan, Dept. of Electr. Eng., Thessaloniki Univ., Greece
pp. 33-36vol.5
D.F. Dunn, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
W.E. Higgins, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
pp. 37-40vol.5
M.R. Luettgen, MIT Lab. for Inf. & Decision Syst., Cambridge, MA, USA
W.C. Karl, MIT Lab. for Inf. & Decision Syst., Cambridge, MA, USA
A.S. Willsky, MIT Lab. for Inf. & Decision Syst., Cambridge, MA, USA
pp. 41-44vol.5
P. Salembier, Dept. of Signal Theory & Com., Univ. of Politecnica de Catalunya, Barcelona, Spain
J. Serra, MIT Lab. for Inf. & Decision Syst., Cambridge, MA, USA
J.A. Bangham, MIT Lab. for Inf. & Decision Syst., Cambridge, MA, USA
pp. 45-48vol.5
P.A. Kelly, Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
G. Chen, Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
pp. 49-52vol.5
M.A. Schulze, Dept. of Electr. Eng., Texas Univ., Austin, TX, USA
J.A. Pearce, Dept. of Electr. Eng., Texas Univ., Austin, TX, USA
pp. 57-60vol.5
Gaofeng Wang, Dept. of Electr. Eng. & Comput. Sci., Wisconsin Univ., Milwaukee, WI, USA
J. Zhang, Dept. of Electr. Eng. & Comput. Sci., Wisconsin Univ., Milwaukee, WI, USA
G.W. Pan, Dept. of Electr. Eng. & Comput. Sci., Wisconsin Univ., Milwaukee, WI, USA
pp. 61-64vol.5
S.A. Martucci, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
R.M. Mersereau, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 65-68vol.5
L. Akarun, Electr. Eng. Dept., Bogazici Univ., Istanbul, Turkey
R.A. Haddad, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 69-72vol.5
A.I. El-Fallah, Center for Image Process. & Integrated Comput., California Univ., Davis, CA, USA
G.E. Ford, Center for Image Process. & Integrated Comput., California Univ., Davis, CA, USA
pp. 73-76vol.5
M.R. Zaman, Fac. of Eng. & Appl. Sci., Memorial Univ. of Newfoundland, St. John's, Nfld., Canada
C.R. Moloney, Fac. of Eng. & Appl. Sci., Memorial Univ. of Newfoundland, St. John's, Nfld., Canada
pp. 77-80vol.5
S.-s. Kuo, AT&T Bell Lab., Murray Hill, NJ, USA
O.E. Agazzi, AT&T Bell Lab., Murray Hill, NJ, USA
pp. 81-84vol.5
G.E. Kopec, Xerox Palo Alto Res. Center, CA, USA
P.A. Chou, Xerox Palo Alto Res. Center, CA, USA
pp. 85-88vol.5
H.K. Aghajan, Dept. of Electr. Eng., Stanford Univ., CA, USA
T. Kailath, Dept. of Electr. Eng., Stanford Univ., CA, USA
pp. 89-92vol.5
K.A. Bartels, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
A.C. Bovik, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
pp. 93-96vol.5
P.-F. Yang, Div. of Appl. Sci., Harvard Univ., Cambridge, MA, USA
P. Maragos, Div. of Appl. Sci., Harvard Univ., Cambridge, MA, USA
pp. 97-100vol.5
C.W. Chen, Dept. of Electr. Eng., Rochester Univ., NY, USA
J. Luo, Dept. of Electr. Eng., Rochester Univ., NY, USA
T.S. Huang, Dept. of Electr. Eng. & Comput. Sci., Wisconsin Univ., Milwaukee, WI, USA
pp. 101-104vol.5
M.-Y. Chen, CEDAR, State Univ. of New York, Amherst, NY, USA
A. Kundu, Dept. of Electr. Eng., Rochester Univ., NY, USA
S.N. Srihari, Dept. of Electr. Eng. & Comput. Sci., Wisconsin Univ., Milwaukee, WI, USA
pp. 105-108vol.5
O.E. Agazzi, AT&T Bell Lab., Murray Hill, NJ, USA
S.-S. Kuo, AT&T Bell Lab., Murray Hill, NJ, USA
E. Levin, AT&T Bell Lab., Murray Hill, NJ, USA
R. Pieraccini, AT&T Bell Lab., Murray Hill, NJ, USA
pp. 113-116vol.5
A.K. Muhamad, Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
F. Deravi, Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
pp. 117-120vol.5
K.S. Nathan, IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
J.R. Bellegarda, IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
D. Nahamoo, IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
E.J. Bellegarda, IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
pp. 121-124vol.5
J.M. Reinhardt, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
W.E. Higgins, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
pp. 125-128vol.5
T. Greiner, Dept. of Electr. Eng., Kaiserslautern Univ., Germany
J.P. Casel, Dept. of Electr. Eng., Kaiserslautern Univ., Germany
M. Pandit, Dept. of Electr. Eng., Kaiserslautern Univ., Germany
pp. 129-132vol.5
K. Aizawa, Dept. of Electr. Eng., Tokyo Univ., Bunkyo-ku, Tokyo, Japan
T. Komatsu, Dept. of Electr. Eng., Kaiserslautern Univ., Germany
T. Saito, Dept. of Electr. Eng., Kaiserslautern Univ., Germany
M. Hatori, IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
pp. 133-136vol.5
Z. Kato, INRIA, Sophia Antipolis, France
M. Berthod, INRIA, Sophia Antipolis, France
J. Zerubia, INRIA, Sophia Antipolis, France
pp. 137-140vol.5
F.G.B. De Natale, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
G.S. Desoli, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
D.D. Giusto, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
G. Vernazza, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
pp. 141-144vol.5
J. Ben-Arie, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
K.R. Rao, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
pp. 145-148vol.5
S.P. Kim, Dept. of Electr. Eng., Polytech. Univ., Brooklyn, NY, USA
W.Y. Su, Dept. of Electr. Eng., Polytech. Univ., Brooklyn, NY, USA
pp. 153-156vol.5
Y.S. Yao, Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
R. Chellappa, Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
pp. 157-160vol.5
R.W. Picard, Media Lab., MIT, Cambridge, MA, USA
T. Kabir, Media Lab., MIT, Cambridge, MA, USA
pp. 161-164vol.5
R. Lenz, Auditory & Visuual Perception Lab., Adv. Telecommun. Res. Inst., Soraku-gun, Kyoto, Japan
pp. 165-168vol.5
D.M. Monro, Sch. of Electron. & Electr. Eng., Bath Univ., UK
pp. 169-172vol.5
H. Cha, Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
L.F. Chaparro, Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
pp. 173-176vol.5
S.W. Lee, Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
J.K. Paik, Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
pp. 177-180vol.5
J. Zhong, Beckman Inst., Illinois Univ., Urbana, IL, USA
R.J. Adrian, Beckman Inst., Illinois Univ., Urbana, IL, USA
T.S. Huang, Beckman Inst., Illinois Univ., Urbana, IL, USA
pp. 181-184vol.5
R. Bernardini, Dipartimento di Elettronica e Inf., Padova, Italy
G.M. Cortelazzo, Dipartimento di Elettronica e Inf., Padova, Italy
G.A. Mian, Dipartimento di Elettronica e Inf., Padova, Italy
pp. 185-188vol.5
C. Stiller, Inst. for Commun. Eng., Aachen Univ. of Technol., Germany
pp. 193-196vol.5
J. Zhang, Electr. Eng. & Comput. Sci. Dept., Wisconsin Univ., Milwaukee, WI, USA
J. Hanauer, Electr. Eng. & Comput. Sci. Dept., Wisconsin Univ., Milwaukee, WI, USA
pp. 197-200vol.5
Q. Zheng, Maryland Univ., College Park, MD, USA
R. Chellappa, Maryland Univ., College Park, MD, USA
pp. 201-204vol.5
S.L. Iu, Panasonic Adv. TV-Video Lab., Inc., Burlington, NJ, USA
E.C. Wu, Panasonic Adv. TV-Video Lab., Inc., Burlington, NJ, USA
pp. 205-208vol.5
I.M. Abdelqader, Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
S.A. Rajala, Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
W.E. Snyder, Dipartimento di Elettronica e Inf., Padova, Italy
pp. 209-212vol.5
A. Kojima, NTT Network Inf. Syst. Lab., Take, Yokosuka, Japan
N. Sakurai, NTT Network Inf. Syst. Lab., Take, Yokosuka, Japan
J.I. Kishigami, Dipartimento di Elettronica e Inf., Padova, Italy
pp. 213-216vol.5
C.K. Cheong, Dept. of Electr. Eng., Tokyo Univ., Bunkyo-Ku, Tokyo, Japan
K. Alizawa, Dept. of Electr. Eng., Tokyo Univ., Bunkyo-Ku, Tokyo, Japan
T. Saito, Dipartimento di Elettronica e Inf., Padova, Italy
M. Hatori, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
pp. 217-220vol.5
J.Y.A. Wang, Media Lab., MIT, Cambridge, MA, USA
E.H. Adelson, Media Lab., MIT, Cambridge, MA, USA
pp. 221-224vol.5
E.H. Adelson, Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
J.L. Prince, Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
pp. 225-228vol.5
A. Nosratinia, Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
M.T. Orchard, Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
pp. 229-232vol.5
L. Torres, ETSIT-U Univ. Politecnica de Catalunya, Barcelona, Spain
J. Salillas, ETSIT-U Univ. Politecnica de Catalunya, Barcelona, Spain
pp. 237-240vol.5
K.L. Oehler, Dept. of Electr. Eng., Stanford Univ., CA, USA
R.M. Gray, Dept. of Electr. Eng., Stanford Univ., CA, USA
pp. 241-244vol.5
N. Mohsenian, Dept. of Electr. Eng., Princeton Univ., NJ, USA
N.M. Nasrabadi, Dept. of Electr. Eng., Stanford Univ., CA, USA
pp. 245-248vol.5
P. D'Alessandro, Contraves Italiana SpA, Roma, Italy
P. Formenti, Dept. of Electr. Eng., Stanford Univ., CA, USA
R. Lancini, Washington Univ., Seattle, WA, USA
pp. 249-252vol.5
L. Lu, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
W.A. Pearlman, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
pp. 253-256vol.5
L.M. Po, Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong
pp. 257-260vol.5
A.J. Patti, Electr. Eng. Dept., Rochester Univ., NY, USA
M.K. Ozkan, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
A.M. Tekalp, Washington Univ., Seattle, WA, USA
M.I. Sezan, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
pp. 261-264vol.5
N.K. Bose, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
H.C. Kim, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
H.M. Valenzuela, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
pp. 269-272vol.5
J.C. Brailean, Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
A.K. Katsaggelos, Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
pp. 273-276vol.5
P. Nasiopoulos, Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
R.K. Ward, Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
pp. 277-280vol.5
M.R. Banham, Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
H. Gonzalez, Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
N.P. Galatsanos, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
A.K. Katsaggelos, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
pp. 281-284vol.5
Y.L. You, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
M. Kaveh, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
pp. 285-288vol.5
M.E. Zervakis, Dept. of Comput. Eng., Minnesota Univ., Duluth, MN, USA
T.M. Kwon, Dept. of Comput. Eng., Minnesota Univ., Duluth, MN, USA
pp. 289-292vol.5
R.P. Kleihorst, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
R.L. Lagendijk, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
J. Biemond, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
pp. 293-296vol.5
P.L. Combettes, Dept. of Electr. Eng., City Univ. of New York, NY, USA
H. Puh, Dept. of Electr. Eng., City Univ. of New York, NY, USA
pp. 297-300vol.5
T. Mitsa, Dept. of Electr. & Comput. Eng., Iowa Univ., Iowa City, IA, USA
K.L. Varkur, Dept. of Electr. & Comput. Eng., Iowa Univ., Iowa City, IA, USA
pp. 301-304vol.5
R. Soininen, Signal Process Lab., Tampere Univ. of Technol., Finland
I. Defee, Signal Process Lab., Tampere Univ. of Technol., Finland
Y. Neuvo, Signal Process Lab., Tampere Univ. of Technol., Finland
pp. 305-308vol.5
S. Hein, Siemens AG, Munchen, Germany
A. Zakhor, Signal Process Lab., Tampere Univ. of Technol., Finland
pp. 309-312vol.5
M.J. Vrhel, Electr. & Comput. Eng. Dept., North Carolina State Univ., Raleigh, NC, USA
H.J. Trussell, Electr. & Comput. Eng. Dept., North Carolina State Univ., Raleigh, NC, USA
pp. 313-316vol.5
V.S. Iverson, Washington Univ., Seattle, WA, USA
E.A. Riskin, Washington Univ., Seattle, WA, USA
pp. 317-320vol.5
Y. Chen, Merck & Co., Rahway, NJ, USA
H. Peterson, Washington Univ., Seattle, WA, USA
W. Bender, Signal Process Lab., Tampere Univ. of Technol., Finland
pp. 325-328vol.5
A. Bist, Dept. of Electr. Eng., Hawaii Univ., HI, USA
A. Jacquin, Washington Univ., Seattle, WA, USA
C. Podilchuk, Signal Process Lab., Tampere Univ. of Technol., Finland
pp. 329-332vol.5
T.N. Pappas, AT&T Bell Lab., Murray Hill, NJ, USA
pp. 333-336vol.5
S. Lepsoy, Dept. of Telecommun., Norwegian Inst. of Technol., Trondheim, Norway
G.E. Oien, Dept. of Telecommun., Norwegian Inst. of Technol., Trondheim, Norway
T.A. Ramstad, Dept. of Telecommun., Norwegian Inst. of Technol., Trondheim, Norway
pp. 337-340vol.5
L. Thomas, Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
F. Deravi, Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
pp. 341-344vol.5
M. Gharavi-Alkhansari, Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
T.S. Huang, Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
pp. 345-348vol.5
G. Vines, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
G. Vines, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 349-352vol.5
W. Li, Signal Process. Lab., Swiss Federal Inst. of Technol., Lausanne, Switzerland
F.X. Mateo, Signal Process. Lab., Swiss Federal Inst. of Technol., Lausanne, Switzerland
pp. 357-360vol.5
D. Tretter, Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
C. Bouman, Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
pp. 361-364vol.5
P. Su, Dept. of Electr. Eng., Imperial Coll. of Sci. Technol. & Med., London, UK
A.G. Constantinides, Dept. of Electr. Eng., Imperial Coll. of Sci. Technol. & Med., London, UK
pp. 365-368vol.5
D. Shah, Dept. of EEE, Strathclyde Univ., Glasgow, UK
S. Marshall, Dept. of EEE, Strathclyde Univ., Glasgow, UK
W.J. Welsh, Dept. of Telecommun., Norwegian Inst. of Technol., Trondheim, Norway
pp. 373-376vol.5
A. Zaccarin, Dept. de Genie Electr., Laval Univ., Quebec, Que., Canada
B. Liu, Dept. of EEE, Strathclyde Univ., Glasgow, UK
pp. 377-380vol.5
K. Ramchandran, Dept. of Electr. Eng., Columbia Univ., NY, USA
A. Ortega, Dept. of Electr. Eng., Columbia Univ., NY, USA
M. Vetterli, Dept. of Electr. Eng., Columbia Univ., NY, USA
pp. 381-384vol.5
K.M. Uz, David Sarnoff Res. Center, Princeton, NJ, USA
J.M. Shapiro, David Sarnoff Res. Center, Princeton, NJ, USA
M. Czigler, David Sarnoff Res. Center, Princeton, NJ, USA
pp. 385-388vol.5
S.W. Wu, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
A. Gersho, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 389-392vol.5
B. Zeng, Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowlooon, Hong Kong
A.N. Venetsanopoulos, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 393-396vol.5
N. Farvardin, Electr. Eng. Dept., Maryland Univ. College Park, MD, USA
X. Ran, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
C.C. Lee, David Sarnoff Res. Center, Princeton, NJ, USA
pp. 397-400vol.5
R.L. Stevenson, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
pp. 401-404vol.5
Y. Yang, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
N.P. Galatsanos, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
A.K. Katsaggelos, David Sarnoff Res. Center, Princeton, NJ, USA
pp. 405-408vol.5
F.G.B. De Natale, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
G.S. Desoli, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
S. Fioravanti, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
D.D. Giusto, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
pp. 409-412vol.5
B. DeCleene, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
H. Sorensen, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
pp. 413-416vol.5
W.M. Lam, Dept. of Electr. Eng., Princeton Univ., NJ, USA
A.R. Reibman, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
B. Liu, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
pp. 417-420vol.5
S.F. Chang, Dept. of EECS, California Univ., Berkeley, CA, USA
D.G. Messerschmitt, Dept. of EECS, California Univ., Berkeley, CA, USA
pp. 421-424vol.5
L.W. Lee, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
J.F. Wang, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
J.Y. Lee, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
C.C. Chen, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
pp. 425-428vol.5
S. Liu, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
M. Hayes, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 429-432vol.5
J. Huang, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
R.M. Mersereau, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 433-436vol.5
H. Li, Dept. of Electr. Eng., Linkoping Univ., Sweden
R. Forchheimer, Dept. of Electr. Eng., Linkoping Univ., Sweden
pp. 441-444vol.5
B.L. Douglas, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
H. Lee, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 445-448vol.5
B.L. Robertson, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
B.L. Robertson, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
pp. 449-452vol.5
M.S. D'Errico, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
B.L. Douglas, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
H. Lee, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 453-456vol.5
G.E. Mailloux, Inst. de Genie Biomed., Ecole Polytech. de Montreal, Que., Canada
R. Noumeir, Inst. de Genie Biomed., Ecole Polytech. de Montreal, Que., Canada
R. Lemieux, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 457-460vol.5
M.F. Griffin, Syst. Sci. Dept., Tokyo Inst. of Technol., Yokohama, Japan
E.C. Boman, Inst. de Genie Biomed., Ecole Polytech. de Montreal, Que., Canada
I. Metal, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
L.P. Orwig, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
pp. 461-464vol.5
M. Soumekh, Dept. of Electr. & Comput. Eng., State Univ. of New York at Buffalo, Amherst, NY, USA
S. Nugroho, Dept. of Electr. & Comput. Eng., State Univ. of New York at Buffalo, Amherst, NY, USA
S. Jones, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
R. Rysdyk, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
pp. 465-468vol.5
R. Noumeir, Inst. de Genie Biomed., Ecole Polytech. de Montreal, Que., Canada
G.E. Mailloux, Inst. de Genie Biomed., Ecole Polytech. de Montreal, Que., Canada
R. Lemieux, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 469-472vol.5
F.A. Baqai, Dept. of Electr. & Electron. Eng., Melbourne Univ., Parkville, Vic., Australia
Y. Hua, Dept. of Electr. & Electron. Eng., Melbourne Univ., Parkville, Vic., Australia
pp. 473-476vol.5
J. Hui, Inst. of Acoust., Acad. Sinica, Beijing, China
H.C. Huan, Inst. of Acoust., Acad. Sinica, Beijing, China
pp. 477-480vol.5
A.C. Segal, Illinois Univ., Chicago, IL, USA
M. Walther, Illinois Univ., Chicago, IL, USA
W.-M. Boerner, Illinois Univ., Chicago, IL, USA
H.-J. Eom, Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
pp. 481-482vol.5
J.L. Prince, Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
pp. 483-486vol.5
Y. Bresler, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
N.P. Willis, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
pp. 487-490vol.5
P. Charbonnier, Univ. de Nice-Sophia Antipolis, Valbonne, France
L. Blanc-Feraud, Univ. de Nice-Sophia Antipolis, Valbonne, France
M. Barlaud, Univ. de Nice-Sophia Antipolis, Valbonne, France
pp. 491-494vol.5
A. Mohammad-Djafari, Lab. des Signaux et Syst., Ecole Superieure d'Electr., Gif-sur-Yvette, France
pp. 495-498vol.5
C. Klifa, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
K. Sauer, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
pp. 499-502vol.5
X.-L. Xu, Dept. of Radiol., Minnesota Univ., Minneapolis, MN, USA
J.-S. Liow, Dept. of Radiol., Minnesota Univ., Minneapolis, MN, USA
S.C. Strother, Dept. of Radiol., Minnesota Univ., Minneapolis, MN, USA
pp. 503-506vol.5
A.H. Tewfik, Minnesota Univ., Minneapolis, MN, USA
X. Hu, Minnesota Univ., Minneapolis, MN, USA
H.H. Garnaoui, Minnesota Univ., Minneapolis, MN, USA
pp. 507-510vol.5
A.S. Belmont, Beckman Inst., Illinois Univ., Urbana, IL, USA
I.B. Kerfoot, Beckman Inst., Illinois Univ., Urbana, IL, USA
pp. 515-518vol.5
G. Potamianos, Dept. of Electr. & Comput. Eng., John Hopkins Univ., Baltimore, MD, USA
J. Goutsias, Dept. of Electr. & Comput. Eng., John Hopkins Univ., Baltimore, MD, USA
pp. 519-522vol.5
B.H. Khalaj, Inf. Syst. Lab., Stanford Univ., CA, USA
A.H. Sayed, Inf. Syst. Lab., Stanford Univ., CA, USA
T. Kailath, Inf. Syst. Lab., Stanford Univ., CA, USA
pp. 523-526vol.5
T. Chen, Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
P.P. Vaidyanathan, Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
pp. 527-530vol.5
N.D. Sinha, Sch. of Electr. Eng. & Comput. Sci., Polytech. Univ., Brooklyn, NY, USA
R.A. Haddad, Sch. of Electr. Eng. & Comput. Sci., Polytech. Univ., Brooklyn, NY, USA
pp. 531-534vol.5
H.-C. Lu, Dept. of Electr. Eng., Tatung Inst. of Technol., Taipei, Taiwan
K.-S. Yeh, Dept. of Electr. Eng., Tatung Inst. of Technol., Taipei, Taiwan
pp. 539-542vol.5
Z. Xiong, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
N.P. Galatsanos, Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
M.T. Orchard, Inf. Syst. Lab., Stanford Univ., CA, USA
pp. 546-549vol.5
P. Sriram, Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
M.W. Marcellin, Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
pp. 554-557vol.5
A. Baskurt, URA CNRS, Villeurbanne, France
F. Peyrin, URA CNRS, Villeurbanne, France
H. Benoit-Cattin, URA CNRS, Villeurbanne, France
R. Goutte, URA CNRS, Villeurbanne, France
pp. 562-565vol.5
S.O. Aase, Div. of Telecommun., Norwegian Inst. Technol., Trondheim, Norway
T.A. Ramstad, Div. of Telecommun., Norwegian Inst. Technol., Trondheim, Norway
pp. 566-569vol.5
W.C. Chung, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
M.J.T. Smith, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 570-573vol.5
E. Chang, California Univ., Berkeley, CA, USA
A. Zahkor, California Univ., Berkeley, CA, USA
pp. 574-577vol.5
E. Ramirez, Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
V. Vaishampayan, Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
pp. 578-581vol.5
J.W. Woods, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
T. Naveen, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
pp. 582-585vol.5
G. Poggi, Dipartimento di Ingegneria Elettronica, Napoli Univ., Italy
E. Sasso, Dipartimento di Ingegneria Elettronica, Napoli Univ., Italy
pp. 586-589vol.5
M. Barlaud, Univ. de Nice-Sophia Antipolis, Valbonne, France
P. Sole, Univ. de Nice-Sophia Antipolis, Valbonne, France
J.M. Moureaux, Univ. de Nice-Sophia Antipolis, Valbonne, France
M. Antonini, Univ. de Nice-Sophia Antipolis, Valbonne, France
P. Gauthier, Univ. de Nice-Sophia Antipolis, Valbonne, France
pp. 590-593vol.5
W.J. Zeng, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Y.F. Huang, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
S.C. Huang, Univ. de Nice-Sophia Antipolis, Valbonne, France
pp. 594-597vol.5
F. Kossentini, Georgia Inst. of Technol., Atlanta, GA, USA
M.J.T. Smith, Georgia Inst. of Technol., Atlanta, GA, USA
C.F. Barnes, Georgia Inst. of Technol., Atlanta, GA, USA
pp. 598-601vol.5
D.F. Lyons, Mitre Corp., McLean, VA, USA
D.L. Neuhoff, Georgia Inst. of Technol., Atlanta, GA, USA
D. Hui, Georgia Inst. of Technol., Atlanta, GA, USA
pp. 602-605vol.5
C. Lo, Dept. of Electr. Eng.-Syst., Univ. of Southern California, Los Angeles, CA, USA
pp. 606-608vol.5
W. Li, EECS Dept., Lehigh Univ., Bethlehem, PA, USA
Y.-Q. Zhang, Georgia Inst. of Technol., Atlanta, GA, USA
pp. 609-612vol.5
T. Naveen, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
J.W. Woods, ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
pp. 613-616vol.5
D. Chiang, Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
L.C. Potter, Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
pp. 617-620vol.5
N. Balram, IBM Corp., Boca Raton, FL, USA
J.M.F. Moura, Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
pp. 621-624vol.5
G.H. Wakefield, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
B.J. Feng, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
K.R. Raghavan, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
M.A. Blommer, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
pp. 626-629vol.5
H.H. Bothe, Dept. of Electron. Tech. Univ. of Berlin, Germany
F. Rieger, Dept. of Electron. Tech. Univ. of Berlin, Germany
pp. 634-637vol.5
C. Banga, Groupe Image, Inst. Nat. des Telecommun., Villeneuve d'Ascq, France
F. Ghorbel, Groupe Image, Inst. Nat. des Telecommun., Villeneuve d'Ascq, France
pp. 638-641vol.5
A.O. Asadi, NYNEX Sci. & Technol., Inc., White Plains, NY, USA
H.C. Leung, NYNEX Sci. & Technol., Inc., White Plains, NY, USA
pp. 642-645vol.5
M.K. Asi, The Higher Inst. for Appl. Sci. & Technol., Damascus, Syria
M. Mrayati, The Higher Inst. for Appl. Sci. & Technol., Damascus, Syria
pp. 646-649vol.5
M.S. Tawfik, ANACAD Comput. Syst., Meylan, France
A. Wittmann, ANACAD Comput. Syst., Meylan, France
P. Senn, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
pp. 650-653vol.5
S.G. Bakamidis, Dept. of Electr. Eng., Nat. Tech. Univ. of Athens, Greece
pp. 658-661vol.5
Z. Berman, Electr. Eng. Dept., Maryland Univ., College Park, MD, USA
J.S. Baras, Electr. Eng. Dept., Maryland Univ., College Park, MD, USA
pp. 662-665vol.5
N. Takai, Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci. Technol. & Med., London, UK
A. Manikas, Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci. Technol. & Med., London, UK
pp. 666-669vol.5
A. Souloumiac, Thomson-CSF/RGS/STS, Gennevilliers, France
P. Chevalier, Thomson-CSF/RGS/STS, Gennevilliers, France
C. Demeure, Thomson-CSF/RGS/STS, Gennevilliers, France
pp. 670-673vol.5
F. Bosveld, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
R.L. Lagendijk, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
J. Biemond, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
pp. 674-677vol.5
N. Niki, Tokushima Univ., Minami-josanjima-cho, Japan
T. Hayashida, Tokushima Univ., Minami-josanjima-cho, Japan
F. Masakiyo, Tokushima Univ., Minami-josanjima-cho, Japan
H. Nishitani, Tokushima Univ., Minami-josanjima-cho, Japan
I. Tamura, Univ. de Nice-Sophia Antipolis, Valbonne, France
pp. 678-681vol.5
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