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Acoustics, Speech, and Signal Processing, 1993. ICASSP-93 Vol 1., 1993 IEEE International Conference on
Minneapolis, MN, USA
April 27-April 30
ISBN: 0-7803-0946-4
Table of Contents
G.D. Cain, Sch. of Electron. & Manuf. Syst. Eng., Westminster Univ., London, UK
A. Yardim, Sch. of Electron. & Manuf. Syst. Eng., Westminster Univ., London, UK
R.C.S. Morling, Sch. of Electron. & Manuf. Syst. Eng., Westminster Univ., London, UK
pp. 4-7
B.L. Evans, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
J.H. McClellan, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
H.J. Trussell, Sch. of Electron. & Manuf. Syst. Eng., Westminster Univ., London, UK
pp. 12-15
R.H. Bamberger, Sch. of EECS, Washington State Univ., Pullman, WA, USA
S.L. Eddins, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
S.J. Reeves, Sch. of Electron. & Manuf. Syst. Eng., Westminster Univ., London, UK
pp. 16-19
C.S. Burrus, Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX, USA
pp. 20-23
R.L. Kirlin, Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
B.A. Hedstrom, Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
pp. 24-27
R. Chassaing, Roger Williams Univ., Bristol, RI, USA
W. Anakwa, Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
A. Richardson, Sch. of Electron. & Manuf. Syst. Eng., Westminster Univ., London, UK
pp. 28-31
R.W. Stewart, Dept. of Electron. & Electr. Eng., Strathclyde Univ., Glasgow, UK
pp. 32-35
V.L. Stonick, Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
pp. 36-39
D. Brzakovic, Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN, USA
H. Beck, Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN, USA
P. Shanmugam, Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN, USA
pp. 44-47
C.L. Nikias, Signal & Image Process. Inst., Univ. of Southern California, Los Angeles, CA, USA
S. Gao, Signal & Image Process. Inst., Univ. of Southern California, Los Angeles, CA, USA
S. Heidari, Signal & Image Process. Inst., Univ. of Southern California, Los Angeles, CA, USA
pp. 71-74
T.G. Xydis, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
A.E. Yagle, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
pp. 75-78
R.A. Malkin, Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
T.C. Pilkington, Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
pp. 79-82
W.J. Williams, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
pp. 83-86
X. Kong, The Johns Hopkins Univ., Baltimore, MD, USA
N. Thakor, The Johns Hopkins Univ., Baltimore, MD, USA
pp. 87-90
J.C. Mosher, Los Alamos Nat. Lab., NM, USA
R.M. Leahy, Los Alamos Nat. Lab., NM, USA
P.S. Lewis, Los Alamos Nat. Lab., NM, USA
pp. 91-94
E. Dubois, INRS-Telecommun., Verdun, Que., Canada
J. Konrad, INRS-Telecommun., Verdun, Que., Canada
pp. 95-98
S.W. Wu, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
A. Gersho, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 103-106
T. Kamae, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
T. Kishimoto, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 107-109
J.G. Apostolopoulos, Res. Lab. of Electron., MIT, Cambridge, MA, USA
P.A. Monta, Res. Lab. of Electron., MIT, Cambridge, MA, USA
J.J. Nicolas, Res. Lab. of Electron., MIT, Cambridge, MA, USA
J.S. Lim, Res. Lab. of Electron., MIT, Cambridge, MA, USA
pp. 110-113
B.G. Haskell, AT&T Bell Lab., Holmdel, NJ, USA
A.R. Reibman, AT&T Bell Lab., Holmdel, NJ, USA
pp. 114-116
D. Raychaudhuri, David Sarnoff Res. Center, Princeton, NJ, USA
H. Sun, David Sarnoff Res. Center, Princeton, NJ, USA
R.S. Girons, Res. Lab. of Electron., MIT, Cambridge, MA, USA
pp. 117-120
J. Backman, Acoustics Lab., Helsinki Univ. of Technol., Espoo, Finland
M. Karjalainen, Acoustics Lab., Helsinki Univ. of Technol., Espoo, Finland
pp. 125-128
J. Chen, Wisconsin Univ., Madison, WI, USA
B.D. Van Veen, Wisconsin Univ., Madison, WI, USA
K.E. Hecox, Wisconsin Univ., Madison, WI, USA
pp. 129-132
R.E.P. Dowling, Imperial Coll. of Sci., Technol., & Med., London, UK
L.F. Turner, Imperial Coll. of Sci., Technol., & Med., London, UK
pp. 133-136
R. Wang, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
R. Harjani, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
pp. 137-140
J.C. Rutledge, Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
A. Tungthangthum, Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
pp. 141-144
H. Javkin, Panasonic Technologies Inc., Santa Barbara, CA, USA
N. Antonanzas-Barroso, Panasonic Technologies Inc., Santa Barbara, CA, USA
A. Das, Panasonic Technologies Inc., Santa Barbara, CA, USA
D. Zerkle, Panasonic Technologies Inc., Santa Barbara, CA, USA
pp. 145-148
M. Schoenle, Hamburg Tech. Univ., Germany
N. Fliege, Hamburg Tech. Univ., Germany
U. Zoelzer, Hamburg Tech. Univ., Germany
pp. 153-156
M. Tohyama, NTT Human Interface Lab., Musashino-shi, Tokyo, Japan
R.H. Lyon, Hamburg Tech. Univ., Germany
T. Koike, Hamburg Tech. Univ., Germany
pp. 157-160
V.A. Margo, Colorado Univ., Boulder, CO, USA
D.M. Etter, Colorado Univ., Boulder, CO, USA
N.C. Carlson, Colorado Univ., Boulder, CO, USA
J.H. Gross, Panasonic Technologies Inc., Santa Barbara, CA, USA
pp. 161-164
R. de Vries, Dept. of Electr. Eng., Twente Univ., AE Enschede, Netherlands
A.P. Berkhoff, Dept. of Electr. Eng., Twente Univ., AE Enschede, Netherlands
C.H. Slump, Dept. of Electr. Eng., Twente Univ., AE Enschede, Netherlands
O.E. Herrmann, Dept. of Electr. Eng., Twente Univ., AE Enschede, Netherlands
pp. 165-168
M.M. Goodwin, AT&T Bell Lab., Murray Hill, NJ, USA
G.W. Elko, AT&T Bell Lab., Murray Hill, NJ, USA
pp. 169-172
E.D. McKinney, Sch. of Electr. Eng., Oklahoma Univ., Norman, OK, USA
V.E. DeBrunner, Sch. of Electr. Eng., Oklahoma Univ., Norman, OK, USA
pp. 177-180
J. Thi, AT&T Bell Lab., Arlington, VA, USA
D.R. Morgan, Sch. of Electr. Eng., Oklahoma Univ., Norman, OK, USA
pp. 181-184
R.W. Stewart, Dept. of Electron. & Electr. Eng., Strathclyde Univ., Glasgow, UK
R. Duncan, Dept. of Electron. & Electr. Eng., Strathclyde Univ., Glasgow, UK
S. Weiss, Dept. of Electron. & Electr. Eng., Strathclyde Univ., Glasgow, UK
pp. 185-188
M.J. Ji, Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
S.M. Kuo, Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
pp. 189-192
K. Brandenburg, Lehrstuhl f. Tech. Elektronik, Erlangen-Nurnberg Univ., Germany
R. Henke, Lehrstuhl f. Tech. Elektronik, Erlangen-Nurnberg Univ., Germany
pp. 193-196
D. Sinha, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
A.H. Tewfik, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
pp. 197-200
X. Lin, Dept. of Electron. & Comput. Sci., Southampton Univ., UK
R. Steele, Dept. of Electron. & Comput. Sci., Southampton Univ., UK
pp. 201-204
M. Paraskevas, Wire Commun. Lab., Patras Univ., Greece
D. Tsoukalas, Wire Commun. Lab., Patras Univ., Greece
J. Mourjopoulos, Wire Commun. Lab., Patras Univ., Greece
pp. 205-208
T.F. Quatieri, MIT Lincoln Lab., Lexington, MA, USA
R.B. Dunn, MIT Lincoln Lab., Lexington, MA, USA
T.E. Hanna, Wire Commun. Lab., Patras Univ., Greece
pp. 213-216
M. Karjalainen, Acoustics Lab., Helsinki Univ. of Technol., Espoo, Finland
J. Backman, Acoustics Lab., Helsinki Univ. of Technol., Espoo, Finland
J. Polkki, IRCAM, Paris, France
pp. 229-232
H. Messer, Dept. of Electr. Eng.-Syst., Tel Aviv Univ., Israel
P.M. Schultheiss, Acoustics Lab., Helsinki Univ. of Technol., Espoo, Finland
pp. 233-236
B.X. Li, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
S. Haykin, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
pp. 237-240
Q. Jin, Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
K.M. Wong, Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
Z.Q. Luo, Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
pp. 241-244
H. Krim, ECE Dept., Northeastern Univ., Boston, MA, USA
J.-C. Pesquet, Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
K. Drouiche, Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
pp. 245-248
D. Kraus, Dept. of Electr. Eng., Ruhr-Univ., Bochum, Germany
A. Dhaouadi, Dept. of Electr. Eng., Ruhr-Univ., Bochum, Germany
J.F. Bohme, Dept. of Electr. Eng., Ruhr-Univ., Bochum, Germany
pp. 257-260
H. Lee, Atlantic Aerospace Electronics Corp., Waltham, MA, USA
F. Li, Dept. of Electr. Eng., Ruhr-Univ., Bochum, Germany
pp. 261-264
W. Chang, NUWC Detachment, New London, CT, USA
B. Bosworth, NUWC Detachment, New London, CT, USA
G.C. Carter, NUWC Detachment, New London, CT, USA
pp. 265-268
B.A. Weisburn, Cornell Univ., Ithaca, NY, USA
S.G. Mitchell, Cornell Univ., Ithaca, NY, USA
C.W. Clark, Cornell Univ., Ithaca, NY, USA
T.W. Parks, Cornell Univ., Ithaca, NY, USA
pp. 269-272
M.P. Wylie, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
S. Roy, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
R.F. Schmitt, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
pp. 281-284
M.L. Graham, US Naval Undersea Warfare Center Div., Newport, RI, USA
F. O'Brien, US Naval Undersea Warfare Center Div., Newport, RI, USA
K.F. Gong, US Naval Undersea Warfare Center Div., Newport, RI, USA
S.E. Hammel, US Naval Undersea Warfare Center Div., Newport, RI, USA
pp. 285-288
H.B. Riley, Dept. of Electr. & Comput. Eng., Ohio Univ., Athens, OH, USA
J.A. Tague, Dept. of Electr. & Comput. Eng., Ohio Univ., Athens, OH, USA
pp. 293-296
M. Lu, Dept. of Radio Eng., Southeast Univ., Nanjing, China
Z.Y. He, Dept. of Radio Eng., Southeast Univ., Nanjing, China
pp. 301-304
J.A. Nuttall, US Naval Undersea Warfare Center, New London, CT, USA
P. Willett, Dept. of Radio Eng., Southeast Univ., Nanjing, China
pp. 305-308
E.C. Real, Lockheed Sanders Inc., Nashua, NH, USA
D.P. Charette, Lockheed Sanders Inc., Nashua, NH, USA
R.A. Gilbert, Lockheed Sanders Inc., Nashua, NH, USA
D.W. Tufts, US Naval Undersea Warfare Center Div., Newport, RI, USA
pp. 309-312
H.C. So, Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, NT, Hong Kong
P.C. Ching, Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, NT, Hong Kong
H.C. Ho, Lockheed Sanders Inc., Nashua, NH, USA
Y.T. Chan, US Naval Undersea Warfare Center Div., Newport, RI, USA
pp. 313-316
J.C. Di Martino, CRIN/INRIA, Vandoeuvre, France
J.P. Haton, CRIN/INRIA, Vandoeuvre, France
A. Laporte, Lockheed Sanders Inc., Nashua, NH, USA
pp. 317-320
B. Senadji, Ecole Nat. Superieure des Telecommun., Paris, France
Y. Grenier, Ecole Nat. Superieure des Telecommun., Paris, France
pp. 321-324
G. Loubet, CEPHA/ENSIEG, St-Martin d'Heres, France
G. Jourdain, CEPHA/ENSIEG, St-Martin d'Heres, France
pp. 329-332
T.G. Manickam, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
R.J. Vaccaro, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
pp. 333-336
S.K. Mehta, US Naval Undersea Warfare Center, New London, CT, USA
E.L. Titlebaum, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
pp. 337-340
S. Sriram, Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
E.A. Lee, Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
pp. 345-348
M. Petrowski, Harris Semiconductor, Melbourne, FL, USA
D.B. Chester, Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
W.R. Young, Lockheed Sanders Inc., Nashua, NH, USA
pp. 349-352
L.E. Lucke, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
K.K. Parhi, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
pp. 357-360
G. Shrimali, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
K.K. Parhi, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
pp. 361-364
T.P. Kelliher, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
M.J. Irwin, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
pp. 365-368
M. Terre, Thomson CSF/CNI, Boulogne Billancourt, France
M. Bellanger, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
pp. 373-376
F.F. Islam, Dept. of Electron., Kyoto Univ., Japan
K. Tamaru, Dept. of Electron., Kyoto Univ., Japan
pp. 377-380
M. Potkonjak, NEC USA, Princeton, NJ, USA
J. Rabaey, Dept. of Electron., Kyoto Univ., Japan
pp. 381-384
D.V. Poornaiah, Indian Telephone Ind. Ltd., Bangalore, India
R. Haribabu, Indian Telephone Ind. Ltd., Bangalore, India
M.O. Ahmad, Lockheed Sanders Inc., Nashua, NH, USA
pp. 385-388
D. Soudris, Dept. of Electr. Eng., Patras Univ., Greece
V. Paliouras, Dept. of Electr. Eng., Patras Univ., Greece
T. Stouraitis, Dept. of Electr. Eng., Patras Univ., Greece
A. Skavantzos, US Naval Undersea Warfare Center Div., Newport, RI, USA
pp. 389-392
J. Schonfeld, Lab. fuer Informationstechnolgie, Hannover Univ., Germany
P. Pirsch, Lab. fuer Informationstechnolgie, Hannover Univ., Germany
pp. 397-400
C. Nagendra, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
M. Borah, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
M. Vishwanath, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
R.M. Owens, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
M.J. Irwin, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
pp. 401-404
D.R. Bull, Dept. of Electr. & Electron. Eng., Bristol Univ., UK
G. Wacey, Dept. of Electr. & Electron. Eng., Bristol Univ., UK
J.J. Stone, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
J.M. Soloff, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
pp. 405-408
W.-C. Fang, Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
T. Shaw, Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
J. Yu, Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
B. Lau, Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Y.-C. Lin, Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
pp. 409-412
C. Chakrabarti, Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
pp. 413-416
L.-F. Chao, Dept. of Comput. Sci., Princeton Univ., NJ, USA
E.H.-M. Sha, Tech. Univ., Berlin, Germany
pp. 421-424
M. Auguin, Lab. d'Inf. Signaux et Syst., Nice Univ., France
F. Boeri, Lab. d'Inf. Signaux et Syst., Nice Univ., France
C. Carriere, Lab. d'Inf. Signaux et Syst., Nice Univ., France
G. Menez, Lab. d'Inf. Signaux et Syst., Nice Univ., France
pp. 425-428
J.T. Buck, Dept. of EECS, California Univ., Berkeley, CA, USA
E.A. Lee, Dept. of EECS, California Univ., Berkeley, CA, USA
pp. 429-432
P.J. Black, Inf. Syst. Lab., Stanford Univ., CA, USA
T.H.-Y. Meng, Inf. Syst. Lab., Stanford Univ., CA, USA
pp. 433-436
H. Park, Dept. of Electr. Eng-Syst., Univ. of Southern California, Los Angeles, CA, USA
V.K. Prasanna, Dept. of Electr. Eng-Syst., Univ. of Southern California, Los Angeles, CA, USA
pp. 437-440
J. Eldon, Raytheon Semiconductor, La Jolla, CA, USA
pp. 441-444
E. Frantzeskakis, Electr. Eng. Dept., Maryland Univ., College Park, MD, USA
J.S. Baras, Electr. Eng. Dept., Maryland Univ., College Park, MD, USA
K.J.R. Liu, Electr. Eng. Dept., Maryland Univ., College Park, MD, USA
pp. 445-448
M. Bertran, Tech. Univ. of Catalonia, Barcelona, Spain
F. Oller, Tech. Univ. of Catalonia, Barcelona, Spain
J. Forga, Tech. Univ. of Catalonia, Barcelona, Spain
J.A. Frau, Tech. Univ. of Catalonia, Barcelona, Spain
J.M. Espejo, Tech. Univ. of Catalonia, Barcelona, Spain
A. Ripoll, Tech. Univ. of Catalonia, Barcelona, Spain
J.C. Herranz, Tech. Univ. of Catalonia, Barcelona, Spain
pp. 449-452
K.H. Yu, Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Y.H. Hu, Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
pp. 461-464
G.I. Kechriotis, Electr. & Comput. Eng. Dept., Northeastern Univ., Boston, MA, USA
E.S. Manolakos, Electr. & Comput. Eng. Dept., Northeastern Univ., Boston, MA, USA
pp. 465-468
K.A. Al-Mashouq, King Saud Univ., Riyadh, Saudi Arabia
I.S. Reed, Electr. & Comput. Eng. Dept., Northeastern Univ., Boston, MA, USA
pp. 469-472
Z. Xiang, Dept. of Radio Eng., Southeast Univ., Nanjing, China
G. Bi, Dept. of Radio Eng., Southeast Univ., Nanjing, China
pp. 473-476
J. Yang, Dept. of Electr. Eng., Brigham Young Univ., Provo, UT, USA
Q. Wu, Dept. of Radio Eng., Southeast Univ., Nanjing, China
J.P. Reilly, Tech. Univ. of Catalonia, Barcelona, Spain
pp. 477-480
V. Ramamurti, Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
S.S. Rao, Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
P.P. Gandhi, Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
pp. 481-484
F.-L. Luo, Dept. of Autom., Tsinghua Univ., Beijing, China
Y.-D. Li, Dept. of Autom., Tsinghua Univ., Beijing, China
pp. 485-488
E. Wilson, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
S. Umesh, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
D.W. Tufts, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
pp. 489-492
C.H. Chen, Electr. & Comput. Eng. Dept., Massachusetts Dartmouth Univ., N. Dartmouth, MA, USA
G.G. Lee, Electr. & Comput. Eng. Dept., Massachusetts Dartmouth Univ., N. Dartmouth, MA, USA
pp. 493-496
Z. Wang, Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
J.V. Hanson, Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
pp. 497-500
K. Farrell, CAIP Center, Rutgers Univ., Piscataway, NJ, USA
R.J. Mammone, CAIP Center, Rutgers Univ., Piscataway, NJ, USA
A.L. Gorin, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
pp. 501-504
A.L. Gorin, AT&T Bell Lab., Murray Hill, NJ, USA
L.G. Miller, AT&T Bell Lab., Murray Hill, NJ, USA
S.E. Levinson, AT&T Bell Lab., Murray Hill, NJ, USA
pp. 505-508
A. Basu, Dept. of Telecommun., Norwegian Inst. of Technol., Trondheim, Norway
T. Svendsen, Dept. of Telecommun., Norwegian Inst. of Technol., Trondheim, Norway
pp. 509-512
G. Zavaliagkos, Northeastern Univ., Boston, MA, USA
R. Schwartz, Dept. of Telecommun., Norwegian Inst. of Technol., Trondheim, Norway
J. Makhoul, AT&T Bell Lab., Murray Hill, NJ, USA
pp. 513-516
M.P. DeSimio, Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
T.R. Anderson, Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
pp. 521-524
B. de Vries, David Sarnoff Res. Center, Princeton, NJ, USA
L. Dias, David Sarnoff Res. Center, Princeton, NJ, USA
J. Pearson, David Sarnoff Res. Center, Princeton, NJ, USA
pp. 525-528
J.E. Diaz-Verdejo, Dpto. de Electronica y Tecnologia de Computadores, Granada Univ., Spain
J.C. Segura-Luna, Dpto. de Electronica y Tecnologia de Computadores, Granada Univ., Spain
A.J. Rubio-Ayuso, Dpto. de Electronica y Tecnologia de Computadores, Granada Univ., Spain
A.M. Peinado-Herreros, Dpto. de Electronica y Tecnologia de Computadores, Granada Univ., Spain
J.L. Perez-Cordoba, Dpto. de Electronica y Tecnologia de Computadores, Granada Univ., Spain
pp. 529-532
A. Mellouk, LRI, UA 410 CNRS, Univ. Paris Sud, Orsay, France
P. Gallinari, Dpto. de Electronica y Tecnologia de Computadores, Granada Univ., Spain
pp. 533-536
H.B.D. Sorensen, Speech Technol. Centre, Aalborg Univ., Denmark
U. Hartmann, Speech Technol. Centre, Aalborg Univ., Denmark
pp. 537-540
Y. Konig, Int. Comput. Sci. Inst., Berkeley, CA, USA
N. Morgan, Int. Comput. Sci. Inst., Berkeley, CA, USA
pp. 545-548
M. Fanty, Oregon Grad. Inst. of Sci. & Technol., Beaverton, OR, USA
P. Schmid, Oregon Grad. Inst. of Sci. & Technol., Beaverton, OR, USA
R. Cole, Oregon Grad. Inst. of Sci. & Technol., Beaverton, OR, USA
pp. 549-552
Y. Kato, ATR Interpreting Telephony Res. Lab., Soraku-gun, Kyoto, Japan
M. Sugiyama, ATR Interpreting Telephony Res. Lab., Soraku-gun, Kyoto, Japan
pp. 553-556
C. Bregler, Dept. of Comput. Sci., Karlsruhe Univ., Germany
H. Hild, ATR Interpreting Telephony Res. Lab., Soraku-gun, Kyoto, Japan
S. Manke, Oregon Grad. Inst. of Sci. & Technol., Beaverton, OR, USA
A. Waibel, Dpto. de Electronica y Tecnologia de Computadores, Granada Univ., Spain
pp. 557-560
P. Le Cerf, Katholieke Univ. Leuven, Heverlee, Belgium
D. Van Compernolle, Katholieke Univ. Leuven, Heverlee, Belgium
pp. 561-564
R.P. Lippmann, MIT Lincoln Lab., Lexington, MA, USA
E. Singer, MIT Lincoln Lab., Lexington, MA, USA
pp. 565-568
J. Alvarez-Cercadillo, ETSI Telecommun, UPM, Madrid, Spain
J. Ortega-Garcia, ETSI Telecommun, UPM, Madrid, Spain
L.A. Hernandez-Gomez, ETSI Telecommun, UPM, Madrid, Spain
pp. 569-572
S. Moon, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
J.-N. Hwang, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
pp. 573-576
J.S. Taur, Princeton Univ., NJ, USA
S.Y. Kung, Princeton Univ., NJ, USA
pp. 577-580
L. Xu, Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
M.R. Azimi-Sadjadi, Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
pp. 581-584
J.-N. Hwang, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
E.T.Y. Chen, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
A.F. Lippman, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
pp. 585-588
H. Chen, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
R.-W. Liu, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
pp. 589-592
P. Yee, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
S. Haykin, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
pp. 597-600
A. Falaschi, Inst. of Elettron., Perugia Univ., Italy
A. Baldassarra, Dept. of Eng., Cambridge Univ., UK
G. Martinelli, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
L.P. Ricotti, Dpto. de Electronica y Tecnologia de Computadores, Granada Univ., Spain
pp. 605-608
R.D. Dony, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
S. Haykin, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
pp. 609-612
S. Haykin, Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
B.V.K. Vijaya Kumar, Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
pp. 613-616
C. Shang, Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
K. Brown, Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
pp. 617-620
A. Sankar, AT&T Bell Lab., Murray Hill, NJ, USA
A. Gorin, AT&T Bell Lab., Murray Hill, NJ, USA
pp. 621-624
U. Bodenhausen, Comput. Sci. Dept., Karlsruhe Univ., Germany
S. Manke, AT&T Bell Lab., Murray Hill, NJ, USA
pp. 625-628
N. Guglielmi, DEIS, Bologna Univ., Italy
R. Guerrieri, DEIS, Bologna Univ., Italy
M. Mastretta, DEIS, Bologna Univ., Italy
L. De Vena, DEIS, Bologna Univ., Italy
pp. 629-632
H. Li, Coll. of Med. Eng. & Arts & Sci., Univ. of South Florida, Tampa, FL, USA
W. Qian, Coll. of Med. Eng. & Arts & Sci., Univ. of South Florida, Tampa, FL, USA
L.P. Clarke, Coll. of Med. Eng. & Arts & Sci., Univ. of South Florida, Tampa, FL, USA
M. Kallergi, Coll. of Med. Eng. & Arts & Sci., Univ. of South Florida, Tampa, FL, USA
pp. 633-636
T. Denk, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
K.K. Parhi, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
V. Cherkassky, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
pp. 637-640
A. Tirakis, Dept. Electr. Eng., Nat. Tech. Univ. of Athens, Greece
S. Kollias, Dept. Electr. Eng., Nat. Tech. Univ. of Athens, Greece
pp. 641-644
Q.-Z. Wu, Telecommun. Lab., Min. of Transp. & Commun., Chung-Li, Taiwan
B.-S. Jeng, Telecommun. Lab., Min. of Transp. & Commun., Chung-Li, Taiwan
Y.-F. Kuan, Telecommun. Lab., Min. of Transp. & Commun., Chung-Li, Taiwan
K.-S. Chou, Telecommun. Lab., Min. of Transp. & Commun., Chung-Li, Taiwan
M.-T. Chen, Telecommun. Lab., Min. of Transp. & Commun., Chung-Li, Taiwan
T.-K. Su, Telecommun. Lab., Min. of Transp. & Commun., Chung-Li, Taiwan
pp. 645-648
H. Hanek, Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
N. Ansari, Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
Z.Z. Zhang, Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
pp. 649-652
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