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  • Acoustics, Speech, and Signal Processing, 1992. ICASSP-92 Vol 5., 1992 IEEE International Conference on
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Acoustics, Speech, and Signal Processing, 1992. ICASSP-92 Vol 5., 1992 IEEE International Conference on
San Francisco, CA, USA
March 23-March 26
ISBN: 0-7803-0532-9
Table of Contents
R. Stasinski, Dept. of Electron. & Commun., Tech. Univ. of Poznan, Poland
pp. 1-4
D. Schonfeld, Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
pp. 5-8
D.P.-K. Lun, Dept. of Electron. Eng., Hong Kong Polytech., Kowloon, Hong Kong
W.-C. Siu, Dept. of Electron. Eng., Hong Kong Polytech., Kowloon, Hong Kong
pp. 9-12
C. Lu, Dept. of Comput. Sci., Towson State Univ., Baltimore, MD, USA
R. Tolimieri, Dept. of Electron. Eng., Hong Kong Polytech., Kowloon, Hong Kong
pp. 13-16
J. Chen, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
H. Sorensen, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
pp. 17-20
F. Desbouvries, Inst. Nat. des Telecommun., Evry, France
C. Gueguen, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
pp. 21-24
A. Wojtkiewicz, Inst. of Electron. Fund., Warsaw Univ. of Technol., Poland
M. Tuszynski, Inst. of Electron. Fund., Warsaw Univ. of Technol., Poland
pp. 25-28
R.S. Orr, Atlantic Aerospace Electron. Corp., Greenbelt, MD, USA
J.M. Morris, Inst. of Electron. Fund., Warsaw Univ. of Technol., Poland
pp. 29-31
Wan-Chi Siu, Dept. of Electron. Eng., Hong Kong Polytech., Kowloon, Hong Kong
D.P.K. Lun, Dept. of Electron. Eng., Hong Kong Polytech., Kowloon, Hong Kong
pp. 33-36
L.C. Ludeman, Dept. of Electr. & Comput. Eng., New Mexico State Univ., Las Cruces, NM, USA
pp. 37-40
H. Kanai, Dept. of Electr. Eng., Tohoku Univ., Sendai, Japan
N. Chubachi, Dept. of Electr. Eng., Tohoku Univ., Sendai, Japan
pp. 45-48
A.N. Skodras, Dept. of Electr. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
pp. 53-55
T. Ebrahimi, Lab. de Traitement des Signaux, EPFL-Ecublens, Lausanne, Switzerland
M. Kunt, Lab. de Traitement des Signaux, EPFL-Ecublens, Lausanne, Switzerland
pp. 57-60
S. Shaw, SRI Int., Menlo Park, CA, USA
T. Garvey, SRI Int., Menlo Park, CA, USA
pp. 61-64
W.A. Kittel, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
M.H. Hayes, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 65-68
M.N. Brown, Dept. of Electron. & Electr. Eng., Strathclyde Univ., Glasgow, UK
R.W. Stewart, Dept. of Electron. & Electr. Eng., Strathclyde Univ., Glasgow, UK
T.S. Durrani, Dept. of Electron. & Electr. Eng., Strathclyde Univ., Glasgow, UK
pp. 69-72
E. Dorken, Boston Univ., MA, USA
S.H. Nawab, Boston Univ., MA, USA
V.R. Lesser, Dept. of Electron. & Electr. Eng., Strathclyde Univ., Glasgow, UK
pp. 73-76
S.A. Martucci, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
R.M. Mersereau, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 85-88
S.R. Powell, Dept. of Electron. Comput. Eng., California Univ., La Jolla, CA, USA
P.M. Chau, Dept. of Electron. Comput. Eng., California Univ., La Jolla, CA, USA
pp. 89-92
T. Kobayashi, Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
K. Fukushi, Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
K. Tokuda, Dept. of Electron. & Electr. Eng., Strathclyde Univ., Glasgow, UK
pp. 93-96
K. Schwarz, Lehrstuhl fuer Nachrichtentechnik, Erlangen-Nurnberg Univ., Germany
R. Reng, Lehrstuhl fuer Nachrichtentechnik, Erlangen-Nurnberg Univ., Germany
H.W. Schussler, Lehrstuhl fuer Nachrichtentechnik, Erlangen-Nurnberg Univ., Germany
pp. 97-100
M. Schulist, Lehrstuhl fuer Nachrichtentechnik, Erlangen-Nurnberg Univ., Germany
pp. 101-104
C. Young, Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
D.L. Jones, Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
pp. 109-112
L. Cohen, CAIP Res. Center, Rutgers Univ., Piscataway, NJ, USA
pp. 113-116
J.P. Ovarlez, ONERA, Chatillon, France
J. Bertrand, Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
P. Bertrand, Lehrstuhl fuer Nachrichtentechnik, Erlangen-Nurnberg Univ., Germany
pp. 117-120
P.J. Loughlin, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
J.W. Pitton, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
L.E. Atlas, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
pp. 125-128
E.L. Titlebaum, Dept. of Electr. Eng., Rochester Univ., NY, USA
S.K. Mehta, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
pp. 129-132
C.E. Davila, Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
M.S. Mobin, Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
pp. 133-136
R.G. Braniuk, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
D.L. Jones, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
pp. 137-140
X. Yu, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
I.S. Reed, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
W. Kraske, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
A.D. Stocker, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
pp. 141-144
N.S. Kontoyannis, Bradley Dept. of Electr. Eng., Virginia Tech, Blacksburg, VA, USA
J.R. Mitchell, Bradley Dept. of Electr. Eng., Virginia Tech, Blacksburg, VA, USA
A.A. Beex, Bradley Dept. of Electr. Eng., Virginia Tech, Blacksburg, VA, USA
pp. 145-148
Y. Takizawa, Commun. Syst. Lab., OKI Electr., Toyko, Japan
A. Fukasawa, Commun. Syst. Lab., OKI Electr., Toyko, Japan
pp. 149-152
M.A. Lagunas, Dept. de TSC, ETSI de Telecomun., Barcelona, Spain
A. Pages, Dept. de TSC, ETSI de Telecomun., Barcelona, Spain
pp. 153-156
P. Goncalves, CNRS, Ecole Normale Superieure de Lyon, Lyon, France
P. Flandrin, CNRS, Ecole Normale Superieure de Lyon, Lyon, France
pp. 157-160
P.M. Djuric, Dept. of Electr. Eng., State Univ. of New York, Stony Brook, NY, USA
S.M. Kay, CNRS, Ecole Normale Superieure de Lyon, Lyon, France
G.F. Boudreaux-Bartels, Bradley Dept. of Electr. Eng., Virginia Tech, Blacksburg, VA, USA
pp. 161-164
N. Zhou, Dept. of Electr. Eng. & Comput. Sci., Norwegian Inst. of Technol., Trondheim, Norway
N. Holte, Dept. of Electr. Eng. & Comput. Sci., Norwegian Inst. of Technol., Trondheim, Norway
pp. 165-168
P.A. Regalia, Dept. Electron. et Commun., Inst. Nat. des Telecommun., Evry, France
pp. 169-172
G.S. Cunningham, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
W.J. Williams, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
pp. 177-180
A. Papandreou, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
G.F. Boudreaux-Bartels, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
pp. 181-184
R.G. Shenoy, Schlumberger-Doll Res., Ridgefield, CT, USA
T.W. Parks, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
pp. 185-188
J.I. Portillo-Garcia, E.T.S. de Ingenieros de Telecommun., Ciudad Univ., Madrid, Spain
J.R. Casar-Corredera, E.T.S. de Ingenieros de Telecommun., Ciudad Univ., Madrid, Spain
G. de Miguel-Vela, E.T.S. de Ingenieros de Telecommun., Ciudad Univ., Madrid, Spain
pp. 189-192
B. Boashash, Centre for Signal Process. Res., Queensland Univ. of Technol., Brisbane, Qld., Australia
G. Frazer, Centre for Signal Process. Res., Queensland Univ. of Technol., Brisbane, Qld., Australia
pp. 193-196
J.R. Fonollosa, Signal & Image Process. Inst., Univ. of Southern California, Los Angeles, CA, USA
C.L. Nikias, Signal & Image Process. Inst., Univ. of Southern California, Los Angeles, CA, USA
pp. 197-200
G.R. Wilson, Appl. Res. Lab., Texas Univ., Austin, TX, USA
K.R. Hardwicke, Appl. Res. Lab., Texas Univ., Austin, TX, USA
R.T. Trochta, Appl. Res. Lab., Texas Univ., Austin, TX, USA
pp. 201-204
D.C. Shin, Dept. of Electr. Eng.-Syst., Univ. of Southern California, Los Angeles, CA, USA
J.M. Mendel, Dept. of Electr. Eng.-Syst., Univ. of Southern California, Los Angeles, CA, USA
pp. 205-208
Z. Shi, Dept. of Electr. Eng., Queen's Univ., Kingston, Ont., Canada
F.W. Fairman, Dept. of Electr. Eng., Queen's Univ., Kingston, Ont., Canada
pp. 209-212
V. Chandran, Washington State Univ., Pullman, WA, USA
S.L. Elgar, Washington State Univ., Pullman, WA, USA
pp. 213-216
E. Dilaveroglu, Colorado Univ., Colarado Springs, CO, USA
M.A. Wickert, Colorado Univ., Colarado Springs, CO, USA
pp. 217-220
A.V. Dandawate, Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
G.B. Giannakis, Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
pp. 229-232
K. Krim, Lab. des Signaux et Systemes, Gif-sur-Yvette, France
J.G. Proakis, Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
pp. 237-240
Q. Wu, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
K.M. Wong, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
J.P. Reilly, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
pp. 241-244
M.D. Zoltowski, Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
C.P. Mathews, Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
pp. 245-248
L. Tong, Dept. of Electr. & Comput. Eng., West Virginia Univ., Morgantown, WV, USA
R. Liu, Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
pp. 249-252
J.O. Jonsson, Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
A.O. Steinhardt, Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
pp. 253-256
C. Roller, Melpar Div., E-Systems, Fairfax, VA, USA
W. Wasylkiwskyj, Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
pp. 257-260
B. Jost, Georgia Inst. of Technol., Atlanta, GA, USA
D.B. Williams, Georgia Inst. of Technol., Atlanta, GA, USA
pp. 261-264
J.A. Marks, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
K.M. Buckley, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
pp. 265-268
K. Diepold, Inst. for Network Theory & Circuit Design, Tech. Univ. Munich, Germany
R. Pauli, Inst. for Network Theory & Circuit Design, Tech. Univ. Munich, Germany
pp. 269-272
R.M. Liang, Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
K.S. Arun, Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
pp. 273-276
J.A. Cadzow, Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA
D.M. Wilkes, Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA
pp. 277-280
S. Kay, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
V. Nagesha, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
pp. 281-284
J.C. Preisig, Dept. of Appl. Ocean Phys. & Eng., Woods Hole Oceanogr. Inst., MA, USA
pp. 285-288
N. Antoniadis, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
A.O. Heo, Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
pp. 289-292
M.F. Griffin, United Technologies Res. Center, East Hartford, CT, USA
E.C. Boman, United Technologies Res. Center, East Hartford, CT, USA
G.W. Stewart, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
pp. 293-296
P. Bondon, Lab. de Signaux et Syst., Gif-sur-Yvette, France
M. Benidir, Lab. de Signaux et Syst., Gif-sur-Yvette, France
B. Picinbono, Lab. de Signaux et Syst., Gif-sur-Yvette, France
pp. 301-304
K. Yao, Dept. of Eng., California Univ., Los Angeles, CA, USA
F. Lorenzelli, Dept. of Eng., California Univ., Los Angeles, CA, USA
J. Kong, Dept. of Eng., California Univ., Los Angeles, CA, USA
pp. 305-308
A.R.N. Nilchi, Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
V.J. Mathews, Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
pp. 309-312
O. Michel, Ecole Normale Superieure de Lyon, France
P. Flandrin, Ecole Normale Superieure de Lyon, France
pp. 317-320
J.S. Brush, RTA Corp., Springfield, VA, USA
J.B. Kadtke, Ecole Normale Superieure de Lyon, France
pp. 321-324
A.C. Singer, Res. Lab. of Electron., MIT, Cambridge, MA, USA
G.W. Wornell, Res. Lab. of Electron., MIT, Cambridge, MA, USA
A.V. Oppenheim, Res. Lab. of Electron., MIT, Cambridge, MA, USA
pp. 325-328
D.F. Drake, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
D.B. Williams, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 329-332
A. Sano, Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
H. Tsuji, Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
H. Ohmori, Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
pp. 333-336
M. Nayeri, Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
M. Nayeri, Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
M.M. Krunz, Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
pp. 337-340
E.M. Dowling, Center for Eng. Math., Texas Univ., Richardson, TX, USA
R.D. DeGroat, Center for Eng. Math., Texas Univ., Richardson, TX, USA
D.A. Linebarger, Center for Eng. Math., Texas Univ., Richardson, TX, USA
pp. 341-344
S. Valaee, Dept. of Electr. Eng., McGill Univ., Montreal, Que., Canada
P. Kabal, Center for Eng. Math., Texas Univ., Richardson, TX, USA
pp. 345-348
G. Xu, Inf. Syst. Lab., Stanford Univ., CA, USA
R.H. Roy, Center for Eng. Math., Texas Univ., Richardson, TX, USA
T. Kailath, Center for Eng. Math., Texas Univ., Richardson, TX, USA
pp. 349-352
K.A. Burgess, Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
B.D. Van Veen, Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
pp. 353-356
S. Bose, Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
A.O. Steinhardt, Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
pp. 357-360
V. Nagesha, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
S. Kay, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
J. Salisbury, Center for Eng. Math., Texas Univ., Richardson, TX, USA
pp. 365-368
R. Onn, Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
A.O. Steinhardt, Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
pp. 369-372
H. Wang, Dept. of Electr. & Comput. Eng., Syracuse Univ., NY, USA
L. Cai, Dept. of Electr. & Comput. Eng., Syracuse Univ., NY, USA
pp. 373-376
W.G. Chen, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
J.P. Reilly, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
K.M. Wong, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
pp. 377-380
Q.T. Zhang, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
K.M. Wong, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
pp. 381-384
A. Drosopoulos, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
S. Haykin, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
pp. 385-388
H. Liu, Dept. of Electr. Eng., Portland State Univ., OR, USA
F. Li, Dept. of Electr. Eng., Portland State Univ., OR, USA
pp. 389-392
A.A. Shah, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
D.W. Tufts, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
pp. 393-396
A.L. Swindlehurst, Dept. of Electr. & Comput. Eng., Brigham Young Univ., Provo, UT, USA
pp. 401-404
W. Xu, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
M. Kaveh, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
pp. 405-408
M. Cabrera, ETSI Telecommun., Univ. Politechnica de Cataluna, Barcelona, Spain
M.A. Lagunas, ETSI Telecommun., Univ. Politechnica de Cataluna, Barcelona, Spain
pp. 413-416
J. Li, Dept. of Electr. Eng., Kentucky Univ., Lexington, KY, USA
J. Li, ETSI Telecommun., Univ. Politechnica de Cataluna, Barcelona, Spain
pp. 417-420
C.M. Monti, Dept. of Electron. & Inf., Padova Univ., Italy
G.L. Pierobon, Dept. of Electron. & Inf., Padova Univ., Italy
U. Viaro, Dept. of Electron. & Inf., Padova Univ., Italy
pp. 421-424
J.D. George, Signalmetrics Inc., Winter Park, FL, USA
R.R. Muise, Dept. of Electron. & Inf., Padova Univ., Italy
J.S. Abel, Dept. of Electron. & Inf., Padova Univ., Italy
pp. 425-428
T.P. Bronez, MITRE Corp., McLean, VA, USA
D.S. Brown, MITRE Corp., McLean, VA, USA
pp. 429-432
J.-T. Yang, Dept. of Electr. & comput. Eng., Pennsylvania State Univ., University Park, PA, USA
S.D. Cabrera, Dept. of Electr. & comput. Eng., Pennsylvania State Univ., University Park, PA, USA
pp. 433-436
G.A. Zimmerman, Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
E.T. Olsen, Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
pp. 437-440
A.A. Platonov, Inst. of Electron. Fundamentals, Warsaw Univ. of Technol., Poland
Z.K. Gajo, Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
J. Szabatin, Dept. of Electron. & Inf., Padova Univ., Italy
pp. 441-444
J. Tsao, Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
W.-J. Shyu, Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
pp. 449-452
J. Schroeder, Dept. of Eng., Denver Univ., CO, USA
J. Lansford, Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
pp. 453-456
P.L. Ainsleigh, US Naval Res. Lab., Orlando, FL, USA
J.D. George, Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
pp. 457-460
M.R. Raghuveer, Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
S.A. Dianat, Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
pp. 461-464
R.D. DeGroat, Center for Eng. Math., Texas Univ., Richardson, TX, USA
L.R. Hunt, Center for Eng. Math., Texas Univ., Richardson, TX, USA
D.A. Linebarger, Center for Eng. Math., Texas Univ., Richardson, TX, USA
pp. 465-468
T. Ning, Dept. of Eng. & Comput. Sci., Trinity Coll., Hartford, CT, USA
S.M. Gao, Center for Eng. Math., Texas Univ., Richardson, TX, USA
pp. 469-472
J.A.R. Fonollosa, ETSE Telecommun., Univ. Politecnica de Catalunya, Barcelona, Spain
J. Vidal, ETSE Telecommun., Univ. Politecnica de Catalunya, Barcelona, Spain
A. Moreno, ETSE Telecommun., Univ. Politecnica de Catalunya, Barcelona, Spain
pp. 473-476
P.O. Amblard, CEPHAG-ENSIEG, St. Martin d'Heres, France
D. Baudois, CEPHAG-ENSIEG, St. Martin d'Heres, France
J.L. Lacoume, CEPHAG-ENSIEG, St. Martin d'Heres, France
pp. 477-480
L.F. Chaparro, Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
L. Luo, Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
pp. 481-484
A.K. Nandi, Dept. of Electron. & Electr. Eng., Strathclyde Univ., Glasgow, UK
C.A. Greated, Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
pp. 485-488
B. Shafai, Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
S. Mo, Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
pp. 489-492
S.B. Kim, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
E.J. Powers, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
pp. 493-496
P.M.T. Broersen, Fac. of Appl. Phys., Delft Univ. of Technol., Netherlands
H.E. Wensink, Fac. of Appl. Phys., Delft Univ. of Technol., Netherlands
pp. 497-500
K.M.M. Prabhu, Dept. of Electr. Eng., Indian Inst. of Tech., Madras, India
K.B. Bagan, Fac. of Appl. Phys., Delft Univ. of Technol., Netherlands
pp. 505-508
M.G. Ruano, Sch. of Electr. Eng. Sci., Univ. Coll. of North Wales, Bangor, UK
P.J. Fish, Sch. of Electr. Eng. Sci., Univ. Coll. of North Wales, Bangor, UK
pp. 513-516
A. Ferrari, LASSY, Univ. de Nice-Sophia Antipolis, France
G. Alengrin, LASSY, Univ. de Nice-Sophia Antipolis, France
C. Theys, LASSY, Univ. de Nice-Sophia Antipolis, France
pp. 517-520
J. Sanubari, Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
K. Tokuda, Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
M. Onoda, Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
pp. 521-524
D.M. Wilkes, Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA
G. Liang, Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA
J.A. Cadzow, Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA
pp. 525-528
A. Spanias, Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
G. Lim, Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
P. Loizou, Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
M. Deisher, Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
pp. 529-532
G.S. Edelson, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
R. Kumaresan, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
D.W. Tufts, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
pp. 533-536
S.-S. Hang, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
R. Jain, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
pp. 537-540
G. Menez, Dept. de l'URA, CNRS, Univ. de Nice-Sophia Antipolis, France
M. Auguin, Dept. de l'URA, CNRS, Univ. de Nice-Sophia Antipolis, France
F. Boeri, Dept. de l'URA, CNRS, Univ. de Nice-Sophia Antipolis, France
C. Carriere, Dept. de l'URA, CNRS, Univ. de Nice-Sophia Antipolis, France
pp. 541-544
M.A. Bayoumi, Univ. of Southwestern Louisiana, Lafayette, LA, USA
N.A. Ramakrishna, Univ. of Southwestern Louisiana, Lafayette, LA, USA
V. Israni, Univ. of Southwestern Louisiana, Lafayette, LA, USA
R.K. Jayam, Univ. of Southwestern Louisiana, Lafayette, LA, USA
pp. 545-548
D.B. Powell, Condisco Systems, Foster City, CA, USA
E.A. Lee, NEC Corp., Kawasaki, Japan
W.C. Newman, Univ. of Southwestern Louisiana, Lafayette, LA, USA
pp. 553-556
P.E. Beckmann, Res. Lab. of Electron., MIT, Cambridge, MA, USA
B.R. Musicus, NEC Corp., Kawasaki, Japan
pp. 557-560
G.R. Gao, McGill Univ., Montreal, Que., Canada
R. Govindarajan, McGill Univ., Montreal, Que., Canada
P. Panangaden, McGill Univ., Montreal, Que., Canada
pp. 561-564
L.-F. Chao, Dept. of Comput. Sci., Princeton Univ., NJ, USA
E.H.-M. Sha, Dept. of Comput. Sci., Princeton Univ., NJ, USA
pp. 565-568
M. Potkonjak, NEC C&C Res. Lab., Princeton, NJ, USA
J. Rabaey, Dept. of Comput. Sci., Princeton Univ., NJ, USA
pp. 569-572
N. Ling, Dept. of Comput. Eng., Santa Clara Univ., CA, USA
T. Shih, Dept. of Comput. Eng., Santa Clara Univ., CA, USA
J. Huang, Dept. of Comput. Eng., Santa Clara Univ., CA, USA
pp. 573-576
G. Mirchandani, Dept. of Comput. Sci. & Electr. Eng., Vermont Univ., Burlington, VT, USA
G. Mirchandani, Dept. of Comput. Sci. & Electr. Eng., Vermont Univ., Burlington, VT, USA
J. Michel, Dept. of Comput. Sci. & Electr. Eng., Vermont Univ., Burlington, VT, USA
P. Twombly, Univ. of Southwestern Louisiana, Lafayette, LA, USA
pp. 577-580
P. Hoang, Dept. of Electr. Eng., California Univ., Berkeley, CA, USA
J. Rabaey, Dept. of Electr. Eng., California Univ., Berkeley, CA, USA
pp. 581-584
F. Lorenzelli, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
K. Yao, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
pp. 585-588
B.A. Curtis, IBM, Boca Raton, FL, USA
V.K. Madisetti, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
pp. 589-592
P.R. Gelabert, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
P.R. Gelabert, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 593-596
T. Hamada, California Univ., La Jolla, CA, USA
S. Banerjee, California Univ., La Jolla, CA, USA
P.M. Chau, California Univ., La Jolla, CA, USA
R.D. Fellman, California Univ., La Jolla, CA, USA
pp. 597-600
P. Duncan, California Univ., Los Angeles, CA, USA
S. Swamy, California Univ., Los Angeles, CA, USA
S. Sprouse, California Univ., Los Angeles, CA, USA
D. Potasz, California Univ., Los Angeles, CA, USA
R. Jain, California Univ., Los Angeles, CA, USA
pp. 605-608
B.P. McGovern, Inst. of Adv. Microelectron., Queen's Univ., Belfast, UK
R.F. Woods, Inst. of Adv. Microelectron., Queen's Univ., Belfast, UK
J.V. McCanny, Inst. of Adv. Microelectron., Queen's Univ., Belfast, UK
pp. 609-612
T. Yoshino, Texas Instruments Tsukuba Res. & Dev. Center, Japan
H. Nishimura, Inst. of Adv. Microelectron., Queen's Univ., Belfast, UK
pp. 613-616
E. Bernard, Inst. for Network Theory & Circuit Design, Tech. Univ., Munich, Germany
J.G. Krammer, Inst. for Network Theory & Circuit Design, Tech. Univ., Munich, Germany
M. Sauer, Inst. for Network Theory & Circuit Design, Tech. Univ., Munich, Germany
R. Schweizer, Inst. for Network Theory & Circuit Design, Tech. Univ., Munich, Germany
pp. 617-620
J.-I. Guo, Nat. Chiao Tung Univ., Hsinchu, Taiwan
C.-M. Liu, Nat. Chiao Tung Univ., Hsinchu, Taiwan
C.-W. Jen, Nat. Chiao Tung Univ., Hsinchu, Taiwan
pp. 621-624
E.H.-M. Sha, Dept. of Comput. Sci., Princeton Univ., NJ, USA
K. Steiglitz, Dept. of Comput. Sci., Princeton Univ., NJ, USA
pp. 625-628
P.J. Black, Inf. Syst. Lab., Stanford Univ., CA, USA
T.H.-Y. Meng, Inf. Syst. Lab., Stanford Univ., CA, USA
pp. 629-632
A.R. Ansari, Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
F.J. Taylor, Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
pp. 633-636
C.-F. Chang, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
B.J. Sheu, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
H. Okada, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
pp. 637-640
M.J. Irwin, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
R.M. Owens, Dept. of Comput. Sci., Pennsylvania State Univ., University Park, PA, USA
pp. 641-644
L.E. Lucke, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
K.K. Parhi, Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
pp. 645-648
M. Vishwanath, Dept. of Comput. Sci., Pennylvania State Univ., University Park, PA, USA
R.M. Owens, Dept. of Comput. Sci., Pennylvania State Univ., University Park, PA, USA
pp. 649-652
H.-D. Lin, AT&T Bell Lab., Holmdel, NJ, USA
D.G. Messerschmitt, Dept. of Comput. Sci., Pennylvania State Univ., University Park, PA, USA
pp. 653-656
M. Karaman, Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
E. Kolagasioglu, Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
A. Atalar, Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
pp. 657-660
I. Tamitani, NEC Corp., Kawasaki, Japan
M. Ohta, NEC Corp., Kawasaki, Japan
Y. Ooi, NEC Corp., Kawasaki, Japan
A. Yoshida, NEC Corp., Kawasaki, Japan
M. Nomura, NEC Corp., Kawasaki, Japan
H. Koyama, NEC Corp., Kawasaki, Japan
T. Nishitani, NEC Corp., Kawasaki, Japan
pp. 661-664
G. Dudley, PictureTel Corp., Peabody, MA, USA
M. Nieman, PictureTel Corp., Peabody, MA, USA
S. Vernick, PictureTel Corp., Peabody, MA, USA
pp. 665-668
A. Razavi, Zoran Corp., Santa Clara, CA, USA
R. Adar, Zoran Corp., Santa Clara, CA, USA
I. Shenberg, Zoran Corp., Santa Clara, CA, USA
R. Retter, Zoran Corp., Santa Clara, CA, USA
R. Friedlander, Zoran Corp., Santa Clara, CA, USA
pp. 669-672
C.D. Summerfield, Syrinx Speech Systems Pty Ltd., Waterloo, NSW, Australia
R.F. Lyon, Zoran Corp., Santa Clara, CA, USA
pp. 673-676
A. Madisetti, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
R. Jain, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
R.L. Baker, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
R. Dianysian, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
pp. 677-680
T. Araki, Matsushita Electric Ind. Co. Ltd., Osaka, Japan
M. Toyokura, Matsushita Electric Ind. Co. Ltd., Osaka, Japan
M. Wakamori, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
K. Aono, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
pp. 681-684
J. Venbrux, NASA Space Eng. Res. Center, Idaho Univ., Moscow, ID, USA
M. Liu, NASA Space Eng. Res. Center, Idaho Univ., Moscow, ID, USA
pp. 685-688
S.S. Ardalan, North Carolina A&T State Univ., Greensboro, NC, USA
J. Foster, North Carolina A&T State Univ., Greensboro, NC, USA
T.-K. Wang, North Carolina A&T State Univ., Greensboro, NC, USA
pp. 689-692
S. Cucchi, DSP Lab., ALCATEL Telettra, Vimercate, Italy
M. Fratti, DSP Lab., ALCATEL Telettra, Vimercate, Italy
pp. 693-696
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