• I
  • ICASSP
  • 1992
  • Acoustics, Speech, and Signal Processing, 1992. ICASSP-92 Vol 3., 1992 IEEE International Conference on
Advanced Search 
Acoustics, Speech, and Signal Processing, 1992. ICASSP-92 Vol 3., 1992 IEEE International Conference on
San Francisco, CA, USA
March 23-March 26
ISBN: 0-7803-0532-9
Table of Contents
J. Dall, Electromagn. Inst., Tech. Univ. of Denmark, Lyngby, Denmark
pp. 5-8
A.W. Krone, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
A.W. Krone, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
pp. 13-16
H. Yang, Dept. of Electr. & Comput. Eng., State Univ. of New York, Amherst, NY, USA
M. Soumekh, Dept. of Electr. & Comput. Eng., State Univ. of New York, Amherst, NY, USA
pp. 17-20
W. Chuang, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
T.S. Huang, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
pp. 21-24
E. Rignot, Jet Propulation Lab., California Inst. of Technol., Pasadena, CA, USA
R. Chellappa, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
pp. 25-28
Y. Delignon, Dept. Math. et Syst. de Commun., Ecole Nat. Superierure de Telecommun. de Bretagne, Brest, France
R. Garello, Dept. Math. et Syst. de Commun., Ecole Nat. Superierure de Telecommun. de Bretagne, Brest, France
A. Hillion, Dept. Math. et Syst. de Commun., Ecole Nat. Superierure de Telecommun. de Bretagne, Brest, France
pp. 29-32
S.D. Silverstein, GE Corporate Res. & Dev., Schenectady, NY, USA
L.J. Thomas, GE Corporate Res. & Dev., Schenectady, NY, USA
pp. 33-36
B.L. Douglas, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
H. Lee, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 37-40
J.M. Francos, Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
D.P. de Garrido, Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
J.W. Woods, Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
pp. 41-44
A.A. Farag, Dept. of Eng. Math. & Comput. Sci., Louisville Univ., KY, USA
pp. 49-52
F. Marques, Dept. Teoria de la Senal y Communicaciones, ETSETB, Barcelona, Spain
J. Cunillera, Dept. Teoria de la Senal y Communicaciones, ETSETB, Barcelona, Spain
A. Gasull, Dept. Teoria de la Senal y Communicaciones, ETSETB, Barcelona, Spain
pp. 53-56
D.A. Langan, General Electric Corp. R&D Center, Schenectady, NY, USA
K.L. Molnar, General Electric Corp. R&D Center, Schenectady, NY, USA
J.W. Modestino, Dept. Teoria de la Senal y Communicaciones, ETSETB, Barcelona, Spain
pp. 57-60
P. Perez, IRISA/CNRS, Rennes, France
F. Heitz, General Electric Corp. R&D Center, Schenectady, NY, USA
pp. 61-64
D. Dunn, Pennsylvania State Univ., University Park, PA, USA
W. Higgins, Pennsylvania State Univ., University Park, PA, USA
J. Wakeley, Pennsylvania State Univ., University Park, PA, USA
pp. 65-68
J.-L. Chen, Dept. of Electr. & Comput. Eng., State Univ. of New York, Amherst, NY, USA
A. Kundu, Dept. of Electr. & Comput. Eng., State Univ. of New York, Amherst, NY, USA
pp. 69-72
G.K. Gregoriou, Imaging & Comput. Vision Center, Drexel Univ., Philadelphia, PA, USA
O.J. Tretiak, Imaging & Comput. Vision Center, Drexel Univ., Philadelphia, PA, USA
pp. 73-76
F.A. DeCosta, Commun. & Signal Process. Lab., Howard Univ., Washington, DC, USA
M.F. Chouika, Imaging & Comput. Vision Center, Drexel Univ., Philadelphia, PA, USA
pp. 77-80
M. Hedley, Dept. of Electr. Eng., Sydney Univ., NSW, Australia
H. Yan, Dept. of Electr. Eng., Sydney Univ., NSW, Australia
pp. 81-84
J. Riek, Rochester Univ., NY, USA
M.A. Tekalp, Rochester Univ., NY, USA
W.E. Smith, Rochester Univ., NY, USA
pp. 85-88
E. Hughlett, Karl Suss America Inc., Westbury Center, Vermont, USA
P. Kaiser, Rochester Univ., NY, USA
pp. 93-96
H. Na, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
H. Lee, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 97-100
P.K. Moller, Electron. Inst., Tech. Univ. of Denmark, Lyngby, Denmark
H.C. Larsen, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 101-104
E. Harrigan, Signal Processing Div., Strathclyde Univ., Glasgow, UK
J.R. Kroh, Signal Processing Div., Strathclyde Univ., Glasgow, UK
W.A. Sandham, Signal Processing Div., Strathclyde Univ., Glasgow, UK
T.S. Durrani, Signal Processing Div., Strathclyde Univ., Glasgow, UK
pp. 105-108
T.-K. Ku, Dept. of Electr. Eng.-Syst., Univ. of Southern California, Los Angeles, CA, USA
C.-C.J. Kuo, Dept. of Electr. Eng.-Syst., Univ. of Southern California, Los Angeles, CA, USA
pp. 109-112
S.A. Kassam, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
R.J. Kozick, Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA, USA
pp. 113-116
G. Bozdagi, Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
L. Onural, Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
A. Atalar, Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
pp. 117-120
R.W. Brockett, Div. of Appl. Sci., Harvard Univ., Cambridge, MA, USA
P. Maragos, Div. of Appl. Sci., Harvard Univ., Cambridge, MA, USA
pp. 125-128
D. Zhao, Dept. of Electr. & Comput. Eng., Michigan Univ., Dearborn, MI, USA
M. Shridhar, Dept. of Electr. & Comput. Eng., Michigan Univ., Dearborn, MI, USA
D.G. Daut, Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
pp. 129-132
J. Samarabandu, State Univ. of New York, Buffalo, NY, USA
R. Acharya, State Univ. of New York, Buffalo, NY, USA
E. Hausmann, State Univ. of New York, Buffalo, NY, USA
K. Allen, State Univ. of New York, Buffalo, NY, USA
pp. 133-136
X. Cao, Dept. of Electr. & Electron. Eng., Wales Univ., Swansea, UK
F. Deravi, Dept. of Electr. & Electron. Eng., Wales Univ., Swansea, UK
pp. 137-140
R.L. Delanoy, MIT Lincoln Lab., Lexington, MA, USA
J.G. Verly, MIT Lincoln Lab., Lexington, MA, USA
D.E. Dudgeon, MIT Lincoln Lab., Lexington, MA, USA
pp. 141-144
L.-X. Wang, Dept. of Electr. Eng.-Syst., Univ. of Southern California, Los Angeles, CA, USA
J.M. Mendel, Dept. of Electr. Eng.-Syst., Univ. of Southern California, Los Angeles, CA, USA
pp. 145-148
E. Levin, AT&T Bell Labs., Murray Hill, NJ, USA
R. Pieraccini, AT&T Bell Labs., Murray Hill, NJ, USA
pp. 149-152
Y. He, Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA
M.-Y. Chen, Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA
A. Kundu, Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA
pp. 153-156
Chang-Keng Lin, Telecommun. Lab., Minist. of Commun., Taipei, Taiwan
Kuo-Sen Chou, Telecommun. Lab., Minist. of Commun., Taipei, Taiwan
Bor-Shenn Jeng, Telecommun. Lab., Minist. of Commun., Taipei, Taiwan
Chun-Hsi Shih, Telecommun. Lab., Minist. of Commun., Taipei, Taiwan
Tzu-Kai Su, Telecommun. Lab., Minist. of Commun., Taipei, Taiwan
pp. 157-160
H.J. Trussel, Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
P. Vora, Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
pp. 161-164
G.E. Ford, Center for Image Process. & Integrated Comput., California Univ., Davis, CA, USA
R.R. Estes, Center for Image Process. & Integrated Comput., California Univ., Davis, CA, USA
H. Chen, Center for Image Process. & Integrated Comput., California Univ., Davis, CA, USA
pp. 165-168
A.M. Tekalp, Dept. of Electr. Eng., Rochester Univ., NY, USA
M.K. Ozkan, Dept. of Electr. Eng., Rochester Univ., NY, USA
M.I. Sezan, Center for Image Process. & Integrated Comput., California Univ., Davis, CA, USA
pp. 169-172
R.R. Schultz, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
R.L. Stevenson, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
pp. 173-176
M. Unser, Nat. Inst. of Health, Bethesda, MD, USA
A. Aldroubi, Nat. Inst. of Health, Bethesda, MD, USA
pp. 177-180
B. Ayazifar, Res. Lab. of Electron., MIT, Cambridge, MA, USA
J.S. Lim, Res. Lab. of Electron., MIT, Cambridge, MA, USA
pp. 181-184
J. Zhong, Beckman Inst., Illinois Univ., Urbana, IL, USA
J. Weng, Beckman Inst., Illinois Univ., Urbana, IL, USA
T.S. Huang, Beckman Inst., Illinois Univ., Urbana, IL, USA
pp. 185-188
D.L. Neuhoff, Dept. of Electr. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
T.N. Pappas, Beckman Inst., Illinois Univ., Urbana, IL, USA
N. Seshadri, Beckman Inst., Illinois Univ., Urbana, IL, USA
pp. 189-192
T. Mitsa, Dept. of Electr. & Comput. Eng., Iowa Univ., Iowa City, IA, USA
K.J. Parker, Beckman Inst., Illinois Univ., Urbana, IL, USA
pp. 193-196
X. Ran, Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
N. Farvardin, Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
pp. 201-204
C.T. Chiu, Maryland Univ., College Park, MD, USA
K.J.R. Liu, Maryland Univ., College Park, MD, USA
pp. 205-208
H. Torbey, Columbia Univ., NY, USA
D. Friedlander, Columbia Univ., NY, USA
J. Barda, Beckman Inst., Illinois Univ., Urbana, IL, USA
pp. 209-212
D. Taubman, Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
A. Zakhor, Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
pp. 213-216
R.H. Bamberger, Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
pp. 217-220
F. Bosveld, Delft Univ. of Technol., Netherlands
R.L. Lagendijk, Delft Univ. of Technol., Netherlands
J. Biemond, Delft Univ. of Technol., Netherlands
pp. 221-224
N. Mohsenian, Dept. of Electr. Eng., Worcester Polytech. Inst., MA, USA
N.M. Nasrabadi, Delft Univ. of Technol., Netherlands
pp. 233-236
R.E. Van Dyck, Center for Commun. & Signal Process., North Carolina State Univ., Raleigh, NC, USA
S.A. Rajala, Center for Commun. & Signal Process., North Carolina State Univ., Raleigh, NC, USA
pp. 237-240
J. Huang, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
S. Liu, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
M.H. Hayes, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
R.M. Mersereau, Telecommun. Lab., Minist. of Commun., Taipei, Taiwan
pp. 241-244
S.N. Efstratiadis, Swiss Federal Inst. of Technol., Lausanne, Switzerland
A.K. Katsaggelos, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 245-248
S.A. Rajala, Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
I.M. Abdelqadar, Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
G.L. Bilbro, Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
W.E. Snyder, Telecommun. Lab., Minist. of Commun., Taipei, Taiwan
pp. 253-256
W.E. Snyder, Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
J.L. Prince, Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
pp. 257-260
R.W. Young, Dept. of Eng., Cambridge Univ., UK
N.G. Kingsbury, Dept. of Eng., Cambridge Univ., UK
pp. 261-264
R. Depommier, INRS-Telecommun., Verdun, Que., Canada
E. Dubois, INRS-Telecommun., Verdun, Que., Canada
pp. 269-272
C.W. Chen, Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
T.S. Huang, Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
pp. 273-276
N.P. Willis, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Y. Bresler, Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
pp. 277-280
M. Zibulski, Dept. of Electr. Eng., Technion, Israel Inst. of Technol., Haifa, Israel
Y.Y. Zeevi, Dept. of Electr. Eng., Technion, Israel Inst. of Technol., Haifa, Israel
pp. 281-284
K. Aizawa, Beckman Inst., Illinois Univ., Urbana, IL, USA
T. Komatsu, Rennes Univ., Lannion, France
T. Saito, Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
pp. 289-292
A.T. Erdem, Eastman Kodak Co., Rochester, NY, USA
M.I. Sezan, Eastman Kodak Co., Rochester, NY, USA
M.K. Ozkan, Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
pp. 293-296
J.W. Woods, Rensselaer Polytech. Inst., Troy, NY, USA
J. Kim, Rensselaer Polytech. Inst., Troy, NY, USA
pp. 297-300
S.F. Yau, Illinois Univ., Urbana, IL, USA
Y. Bresler, Illinois Univ., Urbana, IL, USA
pp. 305-308
V. Ramamoorthy, Southwestern Bell Technology Resources Inc., St. Louis, MO, USA
pp. 309-312
M. Analoui, Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
J. Allebach, Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
pp. 313-316
G.L. Wise, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
E.B. Hall, Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
pp. 317-320
W.-H. Fang, Dept. of Electron. Eng., Nat. Taiwan Inst. of Technol., Taipei, Taiwan
pp. 325-328
X. Liu, Bordeaux Univ., Talence, France
P. Baylou, Bordeaux Univ., Talence, France
M. Najim, Bordeaux Univ., Talence, France
pp. 329-332
J.J. Sacchini, Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
W.M. Steedly, Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
R.L. Moses, Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
pp. 333-336
A.D. Salvia, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
H.M. Valenzuela, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
pp. 337-340
C.R. Champlin, Motorola Strategic Electronics Div., Chandler, AZ, USA
D.R. Morrell, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
pp. 341-344
N. Balram, Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
J.M.F. Moura, Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
pp. 345-348
P.L. Combettes, Dept. of Electr. Eng., City Univ. of New York, NY, USA
M. Benidir, Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
B. Picinbono, Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
pp. 349-352
W.S. So, Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
A.O. Steinhardt, Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
pp. 353-356
S.A. Mohamed, Dept. of Electr. Eng., Queen's Univ., Kingston, Ont., Canada
M.M. Fahmy, Dept. of Electr. Eng., Queen's Univ., Kingston, Ont., Canada
pp. 357-360
R. Baseri, Rensselaer Polytech. Inst., Troy, NY, USA
V.J. Mathews, Dept. of Electr. Eng., Queen's Univ., Kingston, Ont., Canada
pp. 365-368
F. Kossentini, Georgia Tech. Lorraine, Metz, France
M.J.T. Smith, Georgia Tech. Lorraine, Metz, France
C.F. Barnes, Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
pp. 369-372
D.P. de Garrido, Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
W.A. Pearlman, Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
pp. 373-376
D. Miller, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
K. Rose, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 377-380
K. Zeger, Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
A. Bist, Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
pp. 381-384
L. Torres, Dept. of Signal Theory & Commun., Univ. Politechnica de Cataluna, Barcelona, Spain
E. Arias, Dept. of Signal Theory & Commun., Univ. Politechnica de Cataluna, Barcelona, Spain
pp. 385-388
W.-Y. Chan, Dept. of Electr. Eng., McGill Univ., Montreal, Que., Canada
pp. 389-392
G.J. Sullivan, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
R.L. Baker, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
pp. 393-396
D. Soudris, Dept. of Electr. Eng., Patras Univ., Greece
V. Paliouras, Dept. of Electr. Eng., Patras Univ., Greece
T. Stouraitis, Dept. of Electr. Eng., Patras Univ., Greece
pp. 397-400
B.T. Kelley, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
V.K. Madisetti, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 409-412
J. Segman, Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
pp. 413-416
S. Mann, MIT, Cambridge, MA, USA
S. Haykin, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 417-420
N. Polyak, Dept. of Electr.-Comput.-Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
W.A. Pearlman, Dept. of Electr.-Comput.-Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
pp. 425-428
L. Bomer, Siemens AG, Munchen, Germany
M. Antweiler, Dept. of Electr.-Comput.-Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
H. Schotten, Dept. of Electr. Eng., Patras Univ., Greece
pp. 429-432
G.W. Donohoe, Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
C.-H. Jeong, Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
pp. 437-440
M.Y. Jaisimha, Washington Univ., Seattle, WA, USA
E.A. Riskin, Washington Univ., Seattle, WA, USA
R.M. Harlick, Washington Univ., Seattle, WA, USA
pp. 441-444
A. Zaccarin, Dept. de Genie Electrique, Laval Univ., Quebec City, Que., Canada
B. Liu, Washington Univ., Seattle, WA, USA
pp. 449-452
R.L. Lagendijk, Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
M.I. Sezan, Washington Univ., Seattle, WA, USA
pp. 453-46-
S. Gupta, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
A. Gersho, Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
pp. 457-460
H. Knutsson, Linkoping Univ., Sweden
L. Haglund, Linkoping Univ., Sweden
H. Barman, Linkoping Univ., Sweden
G.H. Granlund, Linkoping Univ., Sweden
pp. 469-472
W.-M. Lam, Dept. of Electr. Eng., Princeton Univ., NJ, USA
A.R. Reibman, Linkoping Univ., Sweden
pp. 477-480
Z. Zhou, Dept. of Electr. Eng., Toronto Univ., Ont., Canada
A.N. Venetsanopoulos, Dept. of Electr. Eng., Toronto Univ., Ont., Canada
pp. 481-484
D.M. Monro, Sch. of Electron. & Electr. Eng., Bath Univ., UK
F. Dudbridge, Sch. of Electron. & Electr. Eng., Bath Univ., UK
pp. 485-488
S. Lucke, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
T. Rao, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
R. Mersereau, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 489-492
B. Zeng, Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Y. Neuvo, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
A.N. Venetsanopoulos, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 493-496
R.A. Vander Kam, Dept. of Elect. Eng., Stanford Univ., CA, USA
P.A. Chou, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
E.A. Riskin, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
R.M. Gray, Linkoping Univ., Sweden
pp. 497-500
Q. Guo, Dept. of Electr. Eng., Worcester Polytech. Inst., MA, USA
N.M. Nasrabadi, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
N. Mohsenian, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 501-504
K.S. Knudsen, Dept. of Electr. & Comput Eng., Calgary Univ., Alta., Canada
L.T. Bruton, Dept. of Electr. & Comput Eng., Calgary Univ., Alta., Canada
pp. 505-508
F. Garcia-Ugalde, IRISA/INRIA, Rennes, France
C. Labit, IRISA/INRIA, Rennes, France
V. Nzomigni, IRISA/INRIA, Rennes, France
pp. 513-516
S.-G. Kong, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
B. Kosko, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
pp. 517-520
H. Watanabe, NTT Human Interface Labs., Yokosuka, Japan
S. Sinbghal, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
pp. 521-524
S. Liu, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
M. Hayes, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 525-528
I. Furukawa, NTT Transmission Syst. Labs., Kanagawa, Japan
K. Kashiwabuchi, NTT Transmission Syst. Labs., Kanagawa, Japan
S. Ono, NTT Transmission Syst. Labs., Kanagawa, Japan
pp. 529-532
T. Sawabe, NTT Transmission Syst. Labs., Kanagawa, Japan
T. Fujii, NTT Transmission Syst. Labs., Kanagawa, Japan
H. Nakada, NTT Transmission Syst. Labs., Kanagawa, Japan
N. Ohta, NTT Transmission Syst. Labs., Kanagawa, Japan
S. Ono, NTT Transmission Syst. Labs., Kanagawa, Japan
pp. 533-536
T. Murakami, Mitsubishi Electric Corp., Kamakura, Japan
H. Ohira, Mitsubishi Electric Corp., Kamakura, Japan
O. Tanno, Mitsubishi Electric Corp., Kamakura, Japan
R. Suzuki, Mitsubishi Electric Corp., Kamakura, Japan
M. Wada, Mitsubishi Electric Corp., Kamakura, Japan
T. Saito, Mitsubishi Electric Corp., Kamakura, Japan
K. Ogura, Mitsubishi Electric Corp., Kamakura, Japan
K. Asai, Mitsubishi Electric Corp., Kamakura, Japan
pp. 537-540
C. Erskine, Zoran Corp., Santa Clara, CA, USA
S. Kusevitzky, Zoran Corp., Santa Clara, CA, USA
J. Orihara, Mitsubishi Electric Corp., Kamakura, Japan
H. Watanabe, Mitsubishi Electric Corp., Kamakura, Japan
pp. 541-544
P. Haskell, California Univ., Berkeley, CA, USA
D. Messerschmitt, California Univ., Berkeley, CA, USA
pp. 545-548
Q. Zhang, Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
R. Ward, Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
pp. 549-552
I.W. Sandberg, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
pp. 553-555
S. Paul, Tech. Univ. Munich, Germany
K. Huper, Tech. Univ. Munich, Germany
J.A. Nossek, Tech. Univ. Munich, Germany
pp. 557-560
J. Crespo, Sch. of Electr. Eng., Georgia Inst. of Tech., Atlanta, GA, USA
R.W. Schafer, Tech. Univ. Munich, Germany
pp. 561-564
C. Bouman, Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
M. Shapiro, Tech. Univ. Munich, Germany
pp. 565-568
C.A. Davatzikos, Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
J.L. Prince, Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
pp. 569-572
Z. Kato, INRIA, Valbonne, France
J. Zerubia, INRIA, Valbonne, France
M. Berthod, INRIA, Valbonne, France
pp. 573-576
T. Soni, Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
J.R. Zeidler, INRIA, Valbonne, France
W.H. Ku, INRIA, Valbonne, France
pp. 581-584
Shuqiu Li, Inst. of Acoust., Acad. Sinica, Beijing, China
Ziqiang Hou, Inst. of Acoust., Acad. Sinica, Beijing, China
Qihu Li, Inst. of Acoust., Acad. Sinica, Beijing, China
pp. 585-588
H. Li, Dept. of Electr. Eng., Linkoping Univ., Sweden
P. Roivainen, Dept. of Electr. Eng., Linkoping Univ., Sweden
R. Forchheimer, Dept. of Electr. Eng., Linkoping Univ., Sweden
pp. 593-596
Usage of this product signifies your acceptance of the Terms of Use.