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Acoustics, Speech, and Signal Processing, 1992. ICASSP-92 Vol 2., 1992 IEEE International Conference on
San Francisco, CA, USA
March 23-March 26
ISBN: 0-7803-0532-9
Table of Contents
L. Atlas, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
J. Fang, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
pp. 9-12
A.P. Lobo, Dept. of Commun. & Neurosci., Keele Univ., UK
W.A. Ainsworth, Dept. of Commun. & Neurosci., Keele Univ., UK
pp. 13-16
A. Kiessling, Erlangen-Nurnberg Univ., Germany
R. Kompe, Erlangen-Nurnberg Univ., Germany
H. Niemann, Erlangen-Nurnberg Univ., Germany
E. Noth, Erlangen-Nurnberg Univ., Germany
pp. 17-20
Y.H. Gu, Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
pp. 21-24
K.E. Cummings, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
M.A. Clements, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 25-28
P.P.L. Prado, Dept. of Electr. Eng., Florida Univ., FL, USA
E.H. Shiva, Dept. of Electr. Eng., Florida Univ., FL, USA
D.G. Childers, Dept. of Electr. Eng., Florida Univ., FL, USA
pp. 33-36
T. Hayashi, NTT DATA Communication Systems Corp., Kanagawa, Japan
K. Murakami, NTT DATA Communication Systems Corp., Kanagawa, Japan
pp. 41-44
Sin-Horng Chen, Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Shaw-Hwa Hwang, Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Chun-Yu Tsai, Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
pp. 45-48
Y. Sagisaka, ATR Interpreting Technology Res. Lab., Kyoto, Japan
N. Kaiki, ATR Interpreting Technology Res. Lab., Kyoto, Japan
pp. 49-52
M. Abe, NTT Human Interface Labs., Tokyo, Japan
H. Sato, NTT Human Interface Labs., Tokyo, Japan
pp. 53-56
Q. Lin, Dept. of Speech Commun. & Music Acoust., R. Inst. of Technol., Stockholm, Sweden
G. Fant, Dept. of Speech Commun. & Music Acoust., R. Inst. of Technol., Stockholm, Sweden
pp. 57-60
R.W.P. Luk, Dept. of Electron. & Comput. Sci., Southampton Univ., UK
R.I. Damper, Dept. of Electron. & Comput. Sci., Southampton Univ., UK
pp. 61-64
N. Iwahashi, ATR Interpreting Telephony Res. Lab., Kyoto, Japan
N. Kaiki, ATR Interpreting Telephony Res. Lab., Kyoto, Japan
Y. Sagisaka, ATR Interpreting Telephony Res. Lab., Kyoto, Japan
pp. 65-68
Y. Yamashita, Inst. of Sci. & Ind. Res., Osaka Univ., Japan
R. Mizoguchi, Inst. of Sci. & Ind. Res., Osaka Univ., Japan
pp. 69-72
L.C. Oliviera, INESC, Lisbon, Portugal
M.C. Viana, Inst. of Sci. & Ind. Res., Osaka Univ., Japan
I.M. Trancoso, ATR Interpreting Telephony Res. Lab., Kyoto, Japan
pp. 73-76
T. Zeppenfeld, Sch. of Comput. Sci., Carnegie Mellon Univ., Pittsburgh, PA, USA
A.H. Waibel, Sch. of Comput. Sci., Carnegie Mellon Univ., Pittsburgh, PA, USA
pp. 77-80
K.P. Li, ITT A/CD, San Diego, CA, USA
J.A. Naylor, ITT A/CD, San Diego, CA, USA
M.L. Rossen, ATR Interpreting Telephony Res. Lab., Kyoto, Japan
pp. 81-84
L.D. Wilcox, Xerox Palo Alto Res. Center, CA, USA
M.A. Bush, Xerox Palo Alto Res. Center, CA, USA
pp. 97-100
E.M. Hofstetter, MIT Lincoln Lab., Lexington, MA, USA
R.C. Rose, MIT Lincoln Lab., Lexington, MA, USA
pp. 101-104
K. Ng, BBN Systems & Technologies, Cambridge, MA, USA
H. Gish, BBN Systems & Technologies, Cambridge, MA, USA
J.R. Rohlicek, BBN Systems & Technologies, Cambridge, MA, USA
pp. 109-112
J.R. Rohlicek, BBN Systems & Technologies, Cambridge, MA, USA
D. Ayuso, BBN Systems & Technologies, Cambridge, MA, USA
M. Bates, BBN Systems & Technologies, Cambridge, MA, USA
R. Bobrow, BBN Systems & Technologies, Cambridge, MA, USA
A. Boulanger, BBN Systems & Technologies, Cambridge, MA, USA
H. Gish, BBN Systems & Technologies, Cambridge, MA, USA
P. Jeanrenaud, BBN Systems & Technologies, Cambridge, MA, USA
M. Meteer, BBN Systems & Technologies, Cambridge, MA, USA
M. Siu, BBN Systems & Technologies, Cambridge, MA, USA
pp. 113-116
J.H. Chung, AT&T Bell Labs., Naperville, IL, USA
R.W. Schafer, BBN Systems & Technologies, Cambridge, MA, USA
pp. 117-120
H. Nielsen, Telecommun. Res. Lab., Horsholm, Denmark
K.B. Mikkelsen, Telecommun. Res. Lab., Horsholm, Denmark
H.B. Hansen, Telecommun. Res. Lab., Horsholm, Denmark
Y. Wu, Telecommun. Res. Lab., Horsholm, Denmark
K.J. Larsen, Telecommun. Res. Lab., Horsholm, Denmark
J.A. Sorensen, Telecommun. Res. Lab., Horsholm, Denmark
pp. 129-132
Y. Hussain, Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
N. Farvardin, Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
pp. 133-136
A.V. McCree, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
A.V. McCree, Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 137-140
D. Rowe, Dept. of Electr. & Comput. Eng., Wollongong Univ., NSW, Australia
P. Secker, Dept. of Electr. & Comput. Eng., Wollongong Univ., NSW, Australia
pp. 141-144
J. Haagen, Telecommun. Res. Lab., Horsholm, Denmark
H. Nielsen, Telecommun. Res. Lab., Horsholm, Denmark
S.D. Hansen, Telecommun. Res. Lab., Horsholm, Denmark
pp. 145-148
B.L. Tseng, MIT, Cambridge, MA, USA
F.K. Soong, NTT Human Interface Lab., Tokyo, Japan
A.E. Rosenberg, Telecommun. Res. Lab., Horsholm, Denmark
pp. 161-164
M. Savic, Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
J. Sorensen, Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
pp. 165-168
H.M. Chang, NYNEX Science & Technology Inc., White Plains, NY, USA
pp. 169-172
Y. Gong, CRIN/CRNS, INRIA, Vandoeuvre, France
J.-P. Haton, CRIN/CRNS, INRIA, Vandoeuvre, France
pp. 173-176
Y.-H. Kao, Texas Instruments Inc., Dallas, TX, USA
P.K. Rajasekaran, Texas Instruments Inc., Dallas, TX, USA
J.S. Baras, Texas Instruments Inc., Dallas, TX, USA
pp. 177-180
L.P. Netsch, Texas Instruments Inc., Dallas, TX, USA
G.R. Doddington, Texas Instruments Inc., Dallas, TX, USA
pp. 181-184
D.A. Reynolds, MIT Lincoln Lab., Lexington, MA, USA
R.C. Rose, MIT Lincoln Lab., Lexington, MA, USA
pp. 185-188
M.-H. Siu, BBN Systems & Technologies, Cambridge, MA, USA
G. Yu, BBN Systems & Technologies, Cambridge, MA, USA
H. Gish, BBN Systems & Technologies, Cambridge, MA, USA
pp. 189-192
G. Davidson, Dolby Labs. Inc., San Francisco, CA, USA
W. Anderson, BBN Systems & Technologies, Cambridge, MA, USA
A. Lovrich, BBN Systems & Technologies, Cambridge, MA, USA
pp. 193-196
Do-Hui Teh, Asia Matsushita Electric S Pte Ltd., Singapore
Ah-Peng Tan, Asia Matsushita Electric S Pte Ltd., Singapore
Soo-Ngee Koh, BBN Systems & Technologies, Cambridge, MA, USA
pp. 197-200
C. Heegard, Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
T. Shamoon, Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
pp. 201-203
W.R.T. ten Kate, Philips Res. Lab., Eindhoven, Netherlands
P.M. Boers, Philips Res. Lab., Eindhoven, Netherlands
A. Makivirta, BBN Systems & Technologies, Cambridge, MA, USA
J. Kuusama, Telecommun. Res. Lab., Horsholm, Denmark
K.E. Christensen, Telecommun. Res. Lab., Horsholm, Denmark
E. Sorensen, Telecommun. Res. Lab., Horsholm, Denmark
pp. 205-208
Y.S. Cho, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
E.J. Powers, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
pp. 209-212
Y. Haneda, NTT Human Interface Labs., Tokyo, Japan
S. Makino, NTT Human Interface Labs., Tokyo, Japan
Y. Kaneda, NTT Human Interface Labs., Tokyo, Japan
pp. 213-216
A.S. Munshi, Dept. of Electr. Eng., Toronto Unv., Ont., Canada
pp. 217-220
N.D. Black, Dept. of Electr. Eng., Ulster Univ., Jordanstown, UK
M. Lydon, Dept. of Electr. Eng., Ulster Univ., Jordanstown, UK
N. Waterman, Dept. of Electr. Eng., Ulster Univ., Jordanstown, UK
M. Powderly, Dept. of Electr. Eng., Ulster Univ., Jordanstown, UK
pp. 225-228
D.E. Melton, Nelson Industries Inc., Stoughton, WI, USA
R.A. Greiner, Dept. of Electr. Eng., Ulster Univ., Jordanstown, UK
pp. 229-232
J. Thi, AT&T Bell Labs., Arlington, VA, USA
D.R. Morgan, Dept. of Electr. Eng., Ulster Univ., Jordanstown, UK
pp. 233-236
S.J. Elliott, Inst. of Sound & Vibration Res., Southampton Univ., UK
J. Rex, Dept. of Electr. Eng., Ulster Univ., Jordanstown, UK
pp. 237-240
A.A. Beck, Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
S.A. Zahorian, Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
pp. 241-244
J. Lin, Maryland Univ., College Park, MD, USA
W.-H. Ki, Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
K. Thompson, Dept. of Electr. Eng., Ulster Univ., Jordanstown, UK
S. Shamma, Dept. of Electr. Eng., Ulster Univ., Jordanstown, UK
pp. 245-248
V. Valimaki, Helsinki Univ. of Technol., Espoo, Finland
M. Karjalainen, Helsinki Univ. of Technol., Espoo, Finland
Z. Janosy, Helsinki Univ. of Technol., Espoo, Finland
U.K. Laine, Helsinki Univ. of Technol., Espoo, Finland
pp. 249-252
V.L. Stonick, Carnegie Mellon Univ., Pittsburgh, PA, USA
D. Massie, Helsinki Univ. of Technol., Espoo, Finland
pp. 253-256
K.S. Jog, Dept. of Electron. & Telecommun., Gov. Coll. of Eng., Pune, India
A. Ingle, Dept. of Electron. & Telecommun., Gov. Coll. of Eng., Pune, India
pp. 257-260
X. Qi, Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
F. Palmieri, Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
pp. 265-268
V. Kadirkamanathan, Dept. of Eng., Cambridge Univ., UK
M. Niranjan, Dept. of Eng., Cambridge Univ., UK
F. Fallside, Dept. of Eng., Cambridge Univ., UK
pp. 269-272
Y. Autret, Univ. de Bretagne Occidentale, Brest, France
B. Solaiman, Dept. of Eng., Cambridge Univ., UK
pp. 277-280
M.D. Emmerson, Dept. of Electron. & Comput. Sci., Southampton Univ., UK
R.I. Damper, Dept. of Electron. & Comput. Sci., Southampton Univ., UK
pp. 281-284
P.W. Rander, General Motors Research Labs., Warren, MI, USA
K.P. Unnikrishnan, General Motors Research Labs., Warren, MI, USA
pp. 285-288
H. Chen, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
R.-W. Liu, Dept. of Electr. Eng., Notre Dame Univ., IN, USA
pp. 293-296
S. Bannour, Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
M.R. Azimi-Sadjadi, Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
pp. 297-300
M. Peng, Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
C.L. Nikias, Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
J.G. Proakis, Dept. of Eng., Cambridge Univ., UK
pp. 301-304
Zengjun Xiang, Dept. of Radio Eng., Southeast Univ., Nanjing, China
Guangguo Bi, Dept. of Radio Eng., Southeast Univ., Nanjing, China
pp. 305-308vol.2
Z. Michalopoulou, Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
L. Nolte, Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
D. Alexandrou, Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
pp. 309-312
J. Yang, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
Q. Wu, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
J.P. Reilly, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
pp. 313-316
Yupeng Chen, Inst. of Acoust., Academia Sinica, Beijing, China
Chaohuan Hou, Inst. of Acoust., Academia Sinica, Beijing, China
pp. 317-320
H. Kobatake, Fac. of Technol., Tokyo Univ. of Agric. & Technol., Japan
W. Morita, Fac. of Technol., Tokyo Univ. of Agric. & Technol., Japan
Y. Yano, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
pp. 321-324
A. Dinc, Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
Y. Bar-Ness, Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
pp. 325-328
S.M. Aghili, Dept. of Electr. Eng., McNeese State Univ., Lake Charles, LA, USA
M.H. Thursby, Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
D.R. Marpaka, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
pp. 333-336
J. Kangas, Lab. of Inf. & Comput. Sci., Helsinki Univ. of Technol., Espoo, Finland
K. Torkkola, Lab. of Inf. & Comput. Sci., Helsinki Univ. of Technol., Espoo, Finland
M. Kokkonen, Lab. of Inf. & Comput. Sci., Helsinki Univ. of Technol., Espoo, Finland
pp. 341-344
H. Bourlard, L&H Speech Products, Ieper, Belgium
N. Morgan, Lab. of Inf. & Comput. Sci., Helsinki Univ. of Technol., Espoo, Finland
C. Wooters, Lab. of Inf. & Comput. Sci., Helsinki Univ. of Technol., Espoo, Finland
S. Renals, Helsinki Univ. of Technol., Espoo, Finland
pp. 349-352
H.B.D. Sorensen, Inst. of Electron. Syst., Aalborg Univ., Denmark
U. Hartmann, Inst. of Electron. Syst., Aalborg Univ., Denmark
pp. 353-356
T.M. English, Dept. of Comput. Sci., Texas Tech Univ., Lubbock, TX, USA
L.C. Boggess, Inst. of Electron. Syst., Aalborg Univ., Denmark
pp. 357-360
M.A. Franzini, Telefonica Investigacion y Desarrollo, Madrid, Spain
pp. 361-364
K.M. Curtis, Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
J. Burinston, Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
pp. 369-372
K. Rohani, Motorola Inc., Ft. Worth, TX, USA
M.T. Manry, Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
pp. 373-376
L.E. Russo, Lockheed Sanders Inc., Nashua, NH, USA
E.C. Real, Lockheed Sanders Inc., Nashua, NH, USA
pp. 377-380
F. Arduini, Dept. of Biophys. & Electron. & Eng., Genoa Univ., Italy
S. Fioravanti, Dept. of Biophys. & Electron. & Eng., Genoa Univ., Italy
D.D. Giusto, Dept. of Biophys. & Electron. & Eng., Genoa Univ., Italy
pp. 381-384
O.T.-C. Chen, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
B.J. Sheu, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
W.-C. Fang, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
pp. 385-388
R. Lancini, CEFRIEL, Milano, Italy
F. Perego, CEFRIEL, Milano, Italy
S. Tubaro, Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
pp. 389-392
S.T. Acton, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
A.C. Bovik, Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
pp. 393-396
J.-N. Hwang, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
H. Li, Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
pp. 397-400
R. Re, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
F. Roli, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
S.B. Serpico, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
G. Vernazza, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
pp. 401-404
I.N.M. Papadakis, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
J.G. Reisman, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
S.C.A. Thomopoulos, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
pp. 405-408
M. Teles de Figueiredo, Dept. de Engenharia Electrotecnica e de Computadores, Inst. Superior Tecnico, Lisboa, Portugal
J.M.N. Leitao, Dept. de Engenharia Electrotecnica e de Computadores, Inst. Superior Tecnico, Lisboa, Portugal
pp. 409-412
M. Bouvet, Centre d'Etudes et de Recherches en Detection Sous-Marine, Six-Fours-Les-Plages, France
M. Di Martino, Centre d'Etudes et de Recherches en Detection Sous-Marine, Six-Fours-Les-Plages, France
pp. 413-416
M. Wazenski, Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
D. Alexandrou, Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
B. Breed, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
D. DeFatta, Dept. of Biophys. & Electron. Eng., Genoa Univ., Italy
pp. 417-420
P. Stoica, Dept. of Control & Comput., Polytech. Inst. of Bucharest, Romania
B. Ottersten, Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
M. Viberg, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
pp. 421-424
V.A.N. Barroso, Dept. of Eng. Electr. e de Comp., Inst. Superior Tecnico, Lisboa, Portugal
J.M.F. Moura, Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
pp. 425-428
S. Stergiopoulos, Defence Research Establishment Atlantic, Dartmouth, NS, Canada
N.T. Allcott, Defence Research Establishment Atlantic, Dartmouth, NS, Canada
pp. 433-436
B. Ottersten, Dept. of Autom. Control, R. Inst. of Technol., Stockholm, Sweden
M. Viberg, Telecom Paris, France
B. Wahlberg, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
pp. 441-444
F. Martinerie, Thomson Sintra Activities-Sous-Marines, Arcueil, France
P. Forster, Thomson Sintra Activities-Sous-Marines, Arcueil, France
pp. 449-452
B. Baygun, Michigan Univ., Ann Arbor, MI, USA
A.O. Hero, Michigan Univ., Ann Arbor, MI, USA
pp. 453-456
I.M.G. Lourtie, CAPS, Inst. Superior Tecnico, Lisboa, Portugal
G.C. Carter, Michigan Univ., Ann Arbor, MI, USA
S. Basu, Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
pp. 457-460
Q.T. Zhang, Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
H.S. Miao, Michigan Univ., Ann Arbor, MI, USA
pp. 465-468
A.J. Efron, Illinois Univ., Chicago, IL, USA
H. Jeen, Michigan Univ., Ann Arbor, MI, USA
pp. 469-472
B. Porat, Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
B. Friedlander, Michigan Univ., Ann Arbor, MI, USA
pp. 473-476
A.P. Petropulu, Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
pp. 477-480
T.W. Parks, Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
B.A. Weisburn, Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
pp. 481-484
F.G.B. De Natale, Dept. of Biophys. & Electr. Eng., Genoa Univ., Italy
S. Fioravanti, Dept. of Biophys. & Electr. Eng., Genoa Univ., Italy
D.D. Giusto, Dept. of Biophys. & Electr. Eng., Genoa Univ., Italy
G. Vernazza, Dept. of Biophys. & Electr. Eng., Genoa Univ., Italy
pp. 485-488
M.A. Doron, Dept. of Electron. Syst., Tel-Aviv Univ., Ramat-Aviv, Israel
A.J. Weiss, Dept. of Electron. Syst., Tel-Aviv Univ., Ramat-Aviv, Israel
pp. 489-492
W. Hong, Dept. of Electron. Eng., Naval Aad., Kyoungham, South Korea
A.H. Tewfik, Dept. of Electron. Syst., Tel-Aviv Univ., Ramat-Aviv, Israel
pp. 493-496
E. Doron, Dept. of Nucl. Phys., Weizmann Inst. of Sci., Rehovot, Israel
M.A. Doron, Dept. of Electron. Syst., Tel-Aviv Univ., Ramat-Aviv, Israel
pp. 497-500
G.H. Niezgoda, Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
J. Krolik, Dept. of Electron. Syst., Tel-Aviv Univ., Ramat-Aviv, Israel
pp. 501-504
D. Sinno, Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
D. Cochran, Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
pp. 505-508
M.J.D. Rendas, CAPS, Inst. Superior Tecnico, Lisboa, Portugal
J.M.F. Moura, Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
pp. 509-512
J. Jachner, Atlantic Aerospace Electronics Corp., Waltham, MA, USA
H. Lee, Atlantic Aerospace Electronics Corp., Waltham, MA, USA
pp. 513-516
H.R. Karimi, Dept. of Electr. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
A. Manikas, Dept. of Electr. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
pp. 517-520
J.J. Towers, Dept. of Electr. & Comput. Eng., R. Mil. Coll. of Canada, Kingston, Ont., Canada
Y.T. Chan, Dept. of Electr. & Comput. Eng., R. Mil. Coll. of Canada, Kingston, Ont., Canada
pp. 525-528
P. Larzabal, THOMSON-CSF, Gennevilliers, France
H. Clergeot, Dept. of Electr. & Comput. Eng., R. Mil. Coll. of Canada, Kingston, Ont., Canada
pp. 529-532
F. Li, Dept. of Electr. Eng., Portland State Univ., OR, USA
H. Liu, Dept. of Electr. Eng., Portland State Univ., OR, USA
R.J. Vaccaro, Dept. of Biophys. & Electr. Eng., Genoa Univ., Italy
pp. 537-540
C.M. McIntyre, Defence Res. Establ. Atlantic, Dartmouth, NS, Canada
D.A. Dermott, Defence Res. Establ. Atlantic, Dartmouth, NS, Canada
pp. 541-544
S.K. Mehta, US Naval Underwater Syst. Center, New London, CT, USA
E.L. Titlebaum, Defence Res. Establ. Atlantic, Dartmouth, NS, Canada
pp. 545-548
R.J. Vaccaro, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
T. Manickam, Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
pp. 549-552
S. Umesh, Dept of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
D.W. Tufts, Dept of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
pp. 553-556
J.S. Abel, Tetra Systems Inc., Palo Alto., CA, USA
H.J. Lee, Tetra Systems Inc., Palo Alto., CA, USA
A.P. Lowell, Tetra Systems Inc., Palo Alto., CA, USA
pp. 561-564
A. Zeira, Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
P.M. Schultheiss, Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
pp. 565-568
J.D. Johnston, AT&T Bell Labs., Murray Hill, NJ, USA
A.J. Ferreira, AT&T Bell Labs., Murray Hill, NJ, USA
pp. 569-572
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