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2009 Fifth IEEE International Conference on e-Science
The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics
Oxford, United Kingdom
December 09-December 11
ISBN: 978-0-7695-3877-8
The next substitution of the XDEnabling Grids for E-sciencE project (EGEE) in 2010 by the European Grid Initiative (EGI), where grid infrastructure of each country will be run by National Grid Initiatives (NGI), is giving a boost to the NGI development. In this context, the Spanish National Grid Initiative (es-NGI) is being developed by the escience Spanish network. The es-NGI is developing virtual organizations where common area applications are associated. In this context, the MOSFET virtual organisation (VO-MOSFET) was born in 2009 to perform semiconductor device simulations using the es-NGI infrastructure. This virtual organization is supported by the es-NGI resource centres and it is developing a job submission and monitoring system independent of the grid middleware. In this paper a general description of the VO-MOSFET and some application level utilities of the job submission system are presented. Furthermore, a gridification example of a nanoelectronic simulation is presented proving the grid benefits for the field of nanoelectronic simulation.
Index Terms:
Grid computing, Nanoelectronics, Monte Carlo Simulation, DG-SOI MOSFET, EGI, NGI-es
Citation:
R. Valin, N. Seoane, M. Aldegunde, A. Garcia-Loureiro, "The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics," e-science, pp.271-276, 2009 Fifth IEEE International Conference on e-Science, 2009
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