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Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP'03)
Cannes, France
April 30-April 30
ISBN: 0-7803-7066-X
Table of Contents
Papers
C. Mandelbaum, MEMSCAP, Crolles, France
S. Cases, MEMSCAP, Crolles, France
D. Bensaude, MEMSCAP, Crolles, France
L. Basteres, MEMSCAP, Crolles, France
P. Nachtergaele, MEMSCAP, Crolles, France
pp. 21-26
H.G. Kerkhoff, Testable Design & Test of Microsyst. Group, MESA Res. Inst., Enschede, Netherlands
M. Acar, Testable Design & Test of Microsyst. Group, MESA Res. Inst., Enschede, Netherlands
pp. 27-32
C. Germer, Inst. for Eng. Design, Tech. Univ. of Braunschweig, Germany
U. Hansen, Testable Design & Test of Microsyst. Group, MESA Res. Inst., Enschede, Netherlands
H.-J. Franke, MEMSCAP, Crolles, France
S. Buttgenbach, MEMSCAP, Crolles, France
pp. 33-38
M. Knight, Dept. of Electr. & Comput. Eng., Oregon Health & Sci. Univ., Beaverton, OR, USA
B. Kaminska, Testable Design & Test of Microsyst. Group, MESA Res. Inst., Enschede, Netherlands
J. House, MEMSCAP, Crolles, France
pp. 39-44
J.-P. Sommer, Dept. of Mech. Reliability & Micro Mater., Fraunhofer-Inst. for Reliability & Micro Integration, Berlin, Germany
O. Wittler, Testable Design & Test of Microsyst. Group, MESA Res. Inst., Enschede, Netherlands
D. Manessis, MEMSCAP, Crolles, France
B. Michel, MEMSCAP, Crolles, France
pp. 45-49
L. Rufer, TIMA Lab., Grenoble, France
S. Mir, TIMA Lab., Grenoble, France
E. Simeu, TIMA Lab., Grenoble, France
C. Domingues, TIMA Lab., Grenoble, France
pp. 50-55
A. Endemano, Dept. of Electron. & Comput. Eng., Heriot-Watt Univ., Edinburgh, UK
J.Y. Fourniols, TIMA Lab., Grenoble, France
H. Camon, TIMA Lab., Grenoble, France
A. Marchese, TIMA Lab., Grenoble, France
S. Muratet, MEMSCAP, Crolles, France
pp. 56-63
J.L. Merino, Dept. of Electron., Barcelona Univ., Spain
S.A. Bota, TIMA Lab., Grenoble, France
J. Samitier, TIMA Lab., Grenoble, France
B. Niessen, TIMA Lab., Grenoble, France
E. Cabruja, MEMSCAP, Crolles, France
pp. 64-68
J.L. Merino, Dept. d'Electron., Barcelona Univ., Spain
R. Casanova, Dept. d'Electron., Barcelona Univ., Spain
A. Dieguez, Dept. d'Electron., Barcelona Univ., Spain
S.A. Bota, TIMA Lab., Grenoble, France
J. Samitier, MEMSCAP, Crolles, France
pp. 69-74
H. Cai, Inst. for Infocomm. Res., Singapore, Singapore
C.W. Chan, Dept. d'Electron., Barcelona Univ., Spain
C.S. Thian, Dept. d'Electron., Barcelona Univ., Spain
X.M. Zhang, TIMA Lab., Grenoble, France
C. Lu, MEMSCAP, Crolles, France
pp. 75-78
D. Peters, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
S. Rehfuss, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
R. Laur, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
H.-G. Brachtendorf, TIMA Lab., Grenoble, France
pp. 79-83
I. Sieber, Inst. fur Angewandte Inf., Forschungszentrum Karlsruhe, Germany
U. Gengenbach, Inst. fur Angewandte Inf., Forschungszentrum Karlsruhe, Germany
A. Hofmann, Inst. fur Angewandte Inf., Forschungszentrum Karlsruhe, Germany
pp. 84-89
S. Rehfuss, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
C. Gorecki, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
D. Peters, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
R. Laur, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
pp. 90-94
R.L. Moreno, Microelectron. Group, Univ. Fed. de Itajuba, Sao Paulo, Brazil
E.C. Rodrigues, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
pp. 95-98
M. Tang, Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
A. Agarwal, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
J. Li, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
Q.X. Zhang, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
P. Win, MEMSCAP, Crolles, France
pp. 99-102
S. Deladi, MESA Res. Inst., Twente Univ., Enschede, Netherlands
G. Krijnen, MESA Res. Inst., Twente Univ., Enschede, Netherlands
M.C. Elwenspoek, MESA Res. Inst., Twente Univ., Enschede, Netherlands
pp. 103-107
F. Conseil, Dept. ISEN, Inst. d'Electron., Villeneuve d'Ascq, France
P. Derderian, MESA Res. Inst., Twente Univ., Enschede, Netherlands
M.-F. Ravat, MESA Res. Inst., Twente Univ., Enschede, Netherlands
D. Collard, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
L. Buchaillot, MEMSCAP, Crolles, France
pp. 108-112
Geng-Sheng Kuo, Nat. Chengchi Univ., Taipei, Taiwan
Yong Yin, MESA Res. Inst., Twente Univ., Enschede, Netherlands
pp. 113-116
G. Casinovi, Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
pp. 117-120
L. Ferrario, Microelectron. Div., ITC-irst, Trento, Italy
S. Taschini, MESA Res. Inst., Twente Univ., Enschede, Netherlands
M. Emmenegger, MESA Res. Inst., Twente Univ., Enschede, Netherlands
H. Baltes, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
J.G. Korvink, MEMSCAP, Crolles, France
pp. 121-126
H.G. Teo, Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
J. Singh, MESA Res. Inst., Twente Univ., Enschede, Netherlands
C. Lu, MESA Res. Inst., Twente Univ., Enschede, Netherlands
A.Q. Liu, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
pp. 127-130
C. Wang, Ind. Math. & Gravity Group, Lancaster Univ., UK
D. Liu, Ind. Math. & Gravity Group, Lancaster Univ., UK
R. Rosing, MESA Res. Inst., Twente Univ., Enschede, Netherlands
B. De Masi, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
A. Richardson, MEMSCAP, Crolles, France
pp. 131-136
N.C. Popa, Dispositifs et Instrum. en Optoeletron. et Micro-ondes, Univ. Jean Monnet, Saint-Etienne, France
A. Siblini, Dispositifs et Instrum. en Optoeletron. et Micro-ondes, Univ. Jean Monnet, Saint-Etienne, France
L. Jorat, Dispositifs et Instrum. en Optoeletron. et Micro-ondes, Univ. Jean Monnet, Saint-Etienne, France
pp. 143-148
M. Schlegel, Dept. of Electr. Eng. & Inf. Technol., Chemnitz Univ. of Technol., Germany
G. Herrmann, Dept. of Electr. Eng. & Inf. Technol., Chemnitz Univ. of Technol., Germany
D. Muller, Dept. of Electr. Eng. & Inf. Technol., Chemnitz Univ. of Technol., Germany
pp. 149-153
Zheng Cui, Rutherford Appleton Lab., Chilton, UK
Chao Gong, Dept. of Electr. Eng. & Inf. Technol., Chemnitz Univ. of Technol., Germany
Shanhong Xia, Dept. of Electr. Eng. & Inf. Technol., Chemnitz Univ. of Technol., Germany
pp. 154-158
H. Bolte, ITEM, Bremen Univ., Germany
O. Nussen, ITEM, Bremen Univ., Germany
D. Peters, ITEM, Bremen Univ., Germany
R. Laur, ITEM, Bremen Univ., Germany
D. Richter, MEMSCAP, Crolles, France
pp. 159-163
Guangya Zhou, Dept. of Mech. Eng., Nat. Univ. of Singapore, Singapore
K.K.L. Cheo, Dept. of Mech. Eng., Nat. Univ. of Singapore, Singapore
F.E.H. Tay, Dept. of Mech. Eng., Nat. Univ. of Singapore, Singapore
F.E.H. Tay, Dept. of Mech. Eng., Nat. Univ. of Singapore, Singapore
pp. 164-169
Kaiping Zeng, Inst. for Microsyst. Technol., Freiburg Univ., Germany
Zhenyu Liu, Inst. for Microsyst. Technol., Freiburg Univ., Germany
J.G. Korvink, Inst. for Microsyst. Technol., Freiburg Univ., Germany
pp. 170-175
E. Brusa, DIEGM, Univ. degli Studi di Udine, Italy
F. De Bona, DIEGM, Univ. degli Studi di Udine, Italy
A. Gugliotta, Inst. for Microsyst. Technol., Freiburg Univ., Germany
A. Soma, Dept. of Mech. Eng., Nat. Univ. of Singapore, Singapore
pp. 181-186
G. McRobbie, MicroScale Sensors, Univ. of Paisley, UK
Zaikang Ling, MicroScale Sensors, Univ. of Paisley, UK
F. Clark, MicroScale Sensors, Univ. of Paisley, UK
pp. 187-191
L. Ferrario, Microsyst. Div., ITC-irst, Povo, Italy
C. Armaroli, Microsyst. Div., ITC-irst, Povo, Italy
B. Margesin, Microsyst. Div., ITC-irst, Povo, Italy
G. Soncini, Microsyst. Div., ITC-irst, Povo, Italy
pp. 192-196
O. Nussen, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
D. Peters, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
H. Bolte, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
R. Laur, Inst. for Electromagn. Theor. & Microelectron., Bremen Univ., Germany
pp. 197-200
Chen Shi-Hao, Dept. of Mech. Eng., Tatung Univ., Taipei, Taiwan
Chien Chao-Heng, Dept. of Mech. Eng., Tatung Univ., Taipei, Taiwan
pp. 201-203
S. Myllymaki, Tampere Univ. of Technol., Finland
E. Ristolainen, Tampere Univ. of Technol., Finland
P. Heino, Tampere Univ. of Technol., Finland
A. Lehto, Tampere Univ. of Technol., Finland
K. Varjonen, Tampere Univ. of Technol., Finland
pp. 204-207
M. Morata, Centro Nacional de Microelectron., Campus Univ. Autonoma de Barcelona, Bellaterra, Spain
E. Figueras, Centro Nacional de Microelectron., Campus Univ. Autonoma de Barcelona, Bellaterra, Spain
I. Gracia, Centro Nacional de Microelectron., Campus Univ. Autonoma de Barcelona, Bellaterra, Spain
L. Fonseca, Centro Nacional de Microelectron., Campus Univ. Autonoma de Barcelona, Bellaterra, Spain
C. Cane, Centro Nacional de Microelectron., Campus Univ. Autonoma de Barcelona, Bellaterra, Spain
pp. 208-213
A. Mohamed, Electron. Res. Inst., Egypt
H. Elsimary, Electron. Res. Inst., Egypt
M. Ismail, Centro Nacional de Microelectron., Campus Univ. Autonoma de Barcelona, Bellaterra, Spain
pp. 214-217
Hua Li, Comput. MEMS Div., Inst. of High Performance Comput., Singapore, Singapore
Y.K. Yew, Comput. MEMS Div., Inst. of High Performance Comput., Singapore, Singapore
K.Y. Lam, Comput. MEMS Div., Inst. of High Performance Comput., Singapore, Singapore
T.Y. Ng, Comput. MEMS Div., Inst. of High Performance Comput., Singapore, Singapore
pp. 218-222
J. Laconte, Res. Center in Micro, Univ. Catholique de Louvain, Belgium
V. Wilmart, Res. Center in Micro, Univ. Catholique de Louvain, Belgium
J.-P. Raskin, Comput. MEMS Div., Inst. of High Performance Comput., Singapore, Singapore
D. Flandre, Comput. MEMS Div., Inst. of High Performance Comput., Singapore, Singapore
pp. 223-228
J. Kiihamaki, Microlelctron., VTT Inf. Technol., Finland
P. Pekko, Microlelctron., VTT Inf. Technol., Finland
H. Kattelus, Microlelctron., VTT Inf. Technol., Finland
T. Sillanpaa, Comput. MEMS Div., Inst. of High Performance Comput., Singapore, Singapore
T. Mattila, Centro Nacional de Microelectron., Campus Univ. Autonoma de Barcelona, Bellaterra, Spain
pp. 229-233
J. Li, Microelectron. Div., Nanyang Technol. Univ., Singapore
Q.X. Zhang, Microlelctron., VTT Inf. Technol., Finland
A.Q. Liu, Microlelctron., VTT Inf. Technol., Finland
pp. 234-238
A. Jourdain, IMEC, Leuven, Belgium
H. Ziad, Microlelctron., VTT Inf. Technol., Finland
P. De Moor, Microlelctron., VTT Inf. Technol., Finland
H.A.C. Tilmans, Comput. MEMS Div., Inst. of High Performance Comput., Singapore, Singapore
pp. 239-244
C. Rusu, MEMS Group, Imego Inst., Gothenburg, Sweden
H. Jansen, Microlelctron., VTT Inf. Technol., Finland
R. Gunn, Microlelctron., VTT Inf. Technol., Finland
A. Witvrouw, Comput. MEMS Div., Inst. of High Performance Comput., Singapore, Singapore
pp. 245-250
D.M. Allen, Sch. of Ind. & Manuf. Sci., Cranfield Univ., Bedford, UK
H.J.A. Almond, Sch. of Ind. & Manuf. Sci., Cranfield Univ., Bedford, UK
D. Boubal, Sch. of Ind. & Manuf. Sci., Cranfield Univ., Bedford, UK
pp. 251-254
Erik Jung, Fraunhofer-IZM, Berlin, Germany
A. Ostmann, Sch. of Ind. & Manuf. Sci., Cranfield Univ., Bedford, UK
M. Wiemer, Sch. of Ind. & Manuf. Sci., Cranfield Univ., Bedford, UK
I. Kolesnik, Comput. MEMS Div., Inst. of High Performance Comput., Singapore, Singapore
M. Hutter, Centro Nacional de Microelectron., Campus Univ. Autonoma de Barcelona, Bellaterra, Spain
pp. 255-260
Yigui Li, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiao Tong Univ., China
Di Chen, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiao Tong Univ., China
Jun Zhu, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiao Tong Univ., China
Jingquan Liu, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiao Tong Univ., China
Jiliang Zhang, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiao Tong Univ., China
pp. 261-264
R. Truckenmuller, Inst. fur Mikrostrukturtechnik, Forschungszentrum Karlsruhe, Germany
P. Henzi, Inst. fur Mikrostrukturtechnik, Forschungszentrum Karlsruhe, Germany
D. Herrmann, Inst. fur Mikrostrukturtechnik, Forschungszentrum Karlsruhe, Germany
V. Saile, Inst. fur Mikrostrukturtechnik, Forschungszentrum Karlsruhe, Germany
W.K. Schomburg, Inst. fur Mikrostrukturtechnik, Forschungszentrum Karlsruhe, Germany
pp. 265-267
Guodong Hong, Dept. of Electr. & Electron. Eng., Imperial Coll., London, UK
A.S. Holmes, Dept. of Electr. & Electron. Eng., Imperial Coll., London, UK
M.E. Heaton, Dept. of Electr. & Electron. Eng., Imperial Coll., London, UK
pp. 268-271
M. Worgull, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe AC, Germany
M. Heckele, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe AC, Germany
pp. 272-274
Hsiharng Yang, Inst. of Precision Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Tsung-Shuin Tsai, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe AC, Germany
Reiyu Chein, Dept. of Electr. & Electron. Eng., Imperial Coll., London, UK
Chia-Hua Chang, Inst. fur Mikrostrukturtechnik, Forschungszentrum Karlsruhe, Germany
Jen-Chin Wu, Inst. fur Mikrostrukturtechnik, Forschungszentrum Karlsruhe, Germany
pp. 275-280
L. Lorenzelli, ITC-irst Microsyst. Div., Trento, Italy
K.J. Rangra, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe AC, Germany
C. Collini, Dept. of Electr. & Electron. Eng., Imperial Coll., London, UK
F. Giacomozzi, Inst. fur Mikrostrukturtechnik, Forschungszentrum Karlsruhe, Germany
B. Margesin, Inst. fur Mikrostrukturtechnik, Forschungszentrum Karlsruhe, Germany
pp. 281-285
T. Kobayashi, Nat. Inst. of Adv. Ind. Sci. & Technol., Japan
X.C. Shan, Nat. Inst. of Adv. Ind. Sci. & Technol., Japan
Y. Murakoshi, Nat. Inst. of Adv. Ind. Sci. & Technol., Japan
R. Maeda, Nat. Inst. of Adv. Ind. Sci. & Technol., Japan
pp. 286-289
M. Knight, Dept. of Electr. & Comput. Eng., OGI Sch. of Sci. & Eng., Beaverton, OR, USA
J. House, Dept. of Electr. & Comput. Eng., OGI Sch. of Sci. & Eng., Beaverton, OR, USA
pp. 290-294
E. Novak, Veeco Instrum., Plainvew, NY, USA
F. Pasop, Veeco Instrum., Plainvew, NY, USA
T. Browne, Veeco Instrum., Plainvew, NY, USA
pp. 295-299
M. Ichiki, Nat. Inst. of Adv. Ind. Sci. & Technol, Tsukuba, Japan
Lulu Zhang, Nat. Inst. of Adv. Ind. Sci. & Technol, Tsukuba, Japan
Zhen Yang, Nat. Inst. of Adv. Ind. Sci. & Technol, Tsukuba, Japan
T. Ikehara, Nat. Inst. of Adv. Ind. Sci. & Technol, Tsukuba, Japan
R. Maeda, Nat. Inst. of Adv. Ind. Sci. & Technol, Tsukuba, Japan
pp. 300-303
Y. Murakoshi, Integrated Solid-State Electr. Mech. Instrum., Nat. Inst. of Adv. Ind. Sci. & Technol, Tsukuba, Japan
Y. Murakoshi, Nat. Inst. of Adv. Ind. Sci. & Technol, Tsukuba, Japan
T. Shimizu, Nat. Inst. of Adv. Ind. Sci. & Technol, Tsukuba, Japan
R. Maeda, Nat. Inst. of Adv. Ind. Sci. & Technol, Tsukuba, Japan
pp. 304-311
F. Marty, Ecole Nat. Superieure d'Ingenieurs en Electron. et Electrotech., Noisy-Le-Grand, France
S. Didelon, Ecole Nat. Superieure d'Ingenieurs en Electron. et Electrotech., Noisy-Le-Grand, France
B. Mercier, Ecole Nat. Superieure d'Ingenieurs en Electron. et Electrotech., Noisy-Le-Grand, France
C. Moyroud, Ecole Nat. Superieure d'Ingenieurs en Electron. et Electrotech., Noisy-Le-Grand, France
T. Bourouina, Ecole Nat. Superieure d'Ingenieurs en Electron. et Electrotech., Noisy-Le-Grand, France
pp. 312-317
H. Majjad, Angstrom Lab., Uppsala Univ., Sweden
M. Lindeberg, Angstrom Lab., Uppsala Univ., Sweden
M. Skupinski, Angstrom Lab., Uppsala Univ., Sweden
K. Hjort, Angstrom Lab., Uppsala Univ., Sweden
pp. 318-323
J. Schulz, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
K. Bade, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
M. Guttmann, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
L. Hahn, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
A. Janssen, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
U. Kohler, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
P. Meyer, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
F. Winkler, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
pp. 324-328
F.F. Meroni, Inst. of Mech. Syst., Eidgenossische Tech. Hochschule, Zurich, Switzerland
E. Mazza, Inst. of Mech. Syst., Eidgenossische Tech. Hochschule, Zurich, Switzerland
pp. 329-334
B. Wunderle, Fraunhofer Inst. Zuverlassigkeit und Mikrointegration, Berlin, Germany
J. Auersperg, Fraunhofer Inst. Zuverlassigkeit und Mikrointegration, Berlin, Germany
V. Grosser, Fraunhofer Inst. Zuverlassigkeit und Mikrointegration, Berlin, Germany
E. Kaulfersch, Fraunhofer Inst. Zuverlassigkeit und Mikrointegration, Berlin, Germany
O. Wittler, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
B. Michel, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
pp. 335-340
X. Lafontan, MEMSCAP, Crolles, France
J. Kuchenbecker, Fraunhofer Inst. Zuverlassigkeit und Mikrointegration, Berlin, Germany
B. Guillon, Fraunhofer Inst. Zuverlassigkeit und Mikrointegration, Berlin, Germany
P. Pons, Fraunhofer Inst. Zuverlassigkeit und Mikrointegration, Berlin, Germany
P. Nerin, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
F. Pressecq, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
M. Dardalhon, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
S. Rigo, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
pp. 341-345
M. Moraja, SAES Getters, Lainate, Italy
M. Amiotti, SAES Getters, Lainate, Italy
pp. 346-349
Yigui Li, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiaotong Univ., China
Chun Hui, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiaotong Univ., China
Jun Zhu, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiaotong Univ., China
Jingquan Liu, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiaotong Univ., China
Y. Kanamori, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
pp. 350-352
E. Lennon, Centre de Recherches sur les Tres Basses Temperatures, CNRS, Grenoble, France
F. Ayela, Centre de Recherches sur les Tres Basses Temperatures, CNRS, Grenoble, France
pp. 353-355
Hsiharng Yang, Inst. of Precision Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
Che-Ping Lin, Centre de Recherches sur les Tres Basses Temperatures, CNRS, Grenoble, France
Ching-Kong Chao, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiaotong Univ., China
Cheng-Tang Pan, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiaotong Univ., China
pp. 356-361
Chien Chao-Heng, Dept. of Mech. Eng., Tatung Univ., Taipei, Taiwan
Chen Shi-Hao, Dept. of Mech. Eng., Tatung Univ., Taipei, Taiwan
pp. 362-366
P.-H. Chen, Dept. of Mech. Eng., Nat. Taiwan Univ., Taipei, Taiwan
P.-P. Ding, Dept. of Mech. Eng., Nat. Taiwan Univ., Taipei, Taiwan
J.-S. Kuo, Dept. of Mech. Eng., Nat. Taiwan Univ., Taipei, Taiwan
pp. 373-377
P. Pal, Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi, India
S. Tuli, Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi, India
S. Chandra, Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi, India
pp. 378-381
M. Feldmann, Inst. for Microtechnol., Technische Univ. Braunschweig, Germany
S. Butefisch, Inst. for Microtechnol., Technische Univ. Braunschweig, Germany
S. Buttgenbach, Inst. for Microtechnol., Technische Univ. Braunschweig, Germany
pp. 382-386
Ashok Sharma, Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
T.A. Harder, Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Yu-Chong Tai, Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
pp. 394-398
Feng-Tsai Wang, Dept. of Mech. Manuf Eng., Nat. Huwei Inst. of Technol., Yunlin, Taiwan
Chen-Siang Hsu, Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
R.F. Shyu, Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
C.T. Ho, Key Lab. for Thin Film & Microfabrication of Minist. of Educ., Shanghai Jiaotong Univ., China
pp. 399-401
B. Margesin, ITC-irst, Povo, Italy
A. Bagolini, ITC-irst, Povo, Italy
V. Guarnieri, ITC-irst, Povo, Italy
F. Giacomozzi, ITC-irst, Povo, Italy
A. Faes, ITC-irst, Povo, Italy
R. Pal, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
M. Decarli, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
pp. 402-405
L. Fonseca, Centro Nacional de Microelectron., Bellaterra, Spain
E. Cabruja, Centro Nacional de Microelectron., Bellaterra, Spain
C. Calaza, ITC-irst, Povo, Italy
R. Rubio, ITC-irst, Povo, Italy
J. Santander, ITC-irst, Povo, Italy
E. Figueras, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
I. Gracia, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
C. Cane, Inst. fur Mikrostrukturtech., Forschungszentrum Karlsruhe, Germany
pp. 407-410
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