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Los Angeles, CA
March 31, 2009 to April 2, 2009
ISBN: 978-0-7695-3507-4
pp: 596-599
ABSTRACT
A novel multiple-valued memory circuit design using multiple-peak negative differential resistance (NDR) circuit based on standard SiGe process is demonstrated. The NDR circuit is designed based on the combination of metal-oxide-semiconductor field-effect-transistor (MOS) and hetero-junction-bipolar-transistor (HBT) devices. However, we can obtain the multiple-peak negative differential resistance curves by suitably designing the MOS widths/lengths parameters. The memory circuit use four-peak MOS-HBT-NDR circuit as the driver and four constant current sources as the load. When we control the current sources on and off alternatively, we can obtain a sequence of multiple-valued logic output.
INDEX TERMS
NDR, HBT, BiCMOS, MOS-HBT-NDR
CITATION
Dong-Shong Liang, Kwang-Jow Gan, Jenq-Jong Lu, Cheng-Chi Tai, Cher-Shiung Tsai, Geng-Huang Lan, Yaw-Hwang Chen, "Multiple-Valued Memory Design by Standard BiCMOS Technique", CSIE, 2009, 2009 WRI World Congress on Computer Science and Information Engineering, CSIE, 2009 WRI World Congress on Computer Science and Information Engineering, CSIE 2009, pp. 596-599, doi:10.1109/CSIE.2009.972
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