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Issue No.06 - Nov.-Dec. (2014 vol.34)
pp: 74-85
Xiaofei Wang , University of Minnesota
John Keane , Intel
Tony Tae-Hyoung Kim , Nanyang Technological University
Pulkit Jain , Intel
Qianying Tang , University of Minnesota
Chris H. Kim , University of Minnesota
Circuit reliability issues such as bias temperature instability, hot carrier injection, time-dependent dielectric breakdown, electromigration, and random telegraph noise have become a growing concern with technology scaling. Precise measurements of circuit degradation induced by these reliability mechanisms are a key aspect of robust design. This article reviews several unique test-chip designs that demonstrate the benefits of utilizing on-chip logic and a simple test interface to automate circuit aging experiments. This new class of compact on-chip sensors can reveal important aspects of circuit aging that would otherwise be impossible to measure, facilitate the collection of reliability data from systems deployed in the field, and eventually lead us down the path to real-time aging compensation in future processors.
Odometers, Sensors, Frequency measurement, Monitoring, Telegraphy, Temperature measurement, Circuit stability, Network-on-chip,random telegraph noise, circuit reliability, aging, variation, reliability monitor, on-chip sensor, in-situ sensor, bias temperature instability, hot carrier injection, time-dependent dielectric breakdown
Xiaofei Wang, John Keane, Tony Tae-Hyoung Kim, Pulkit Jain, Qianying Tang, Chris H. Kim, "Silicon Odometers: Compact In Situ Aging Sensors for Robust System Design", IEEE Micro, vol.34, no. 6, pp. 74-85, Nov.-Dec. 2014, doi:10.1109/MM.2014.2
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