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Issue No.05 - Sept.-Oct. (2013 vol.33)
pp: 50-59
ABSTRACT
Although the superior subthreshold characteristics of steep-slope devices can help power up more cores, researchers still need CMOS technology to accelerate sequential applications, because it can reach higher frequencies. Device-level heterogeneous multicores can give the best of both worlds, but they need smart resource management to realize this promise. In this article, the authors discuss device-level heterogeneous multicores and various resource-management schemes for reaching higher energy efficiency.
INDEX TERMS
Multicore processing, CMOS integrated circuits, Silicon, Dynamic scheduling, Low voltage, Performance evaluation, Program processors, Semiconductor device manufacture, power partitioning, steep-slope devices, dark silicon, dim silicon, CMOS-TFET heterogeneous architectures, dynamic voltage and frequency scaling, DVFS, thread migration
CITATION
"Steep-Slope Devices: From Dark to Dim Silicon", IEEE Micro, vol.33, no. 5, pp. 50-59, Sept.-Oct. 2013, doi:10.1109/MM.2013.75
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