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Steep-Slope Devices: From Dark to Dim Silicon
Sept.-Oct. 2013 (vol. 33 no. 5)
pp. 50-59
Although the superior subthreshold characteristics of steep-slope devices can help power up more cores, researchers still need CMOS technology to accelerate sequential applications, because it can reach higher frequencies. Device-level heterogeneous multicores can give the best of both worlds, but they need smart resource management to realize this promise. In this article, the authors discuss device-level heterogeneous multicores and various resource-management schemes for reaching higher energy efficiency.
Index Terms:
Multicore processing,CMOS integrated circuits,Silicon,Dynamic scheduling,Low voltage,Performance evaluation,Program processors,Semiconductor device manufacture,power partitioning,steep-slope devices,dark silicon,dim silicon,CMOS-TFET heterogeneous architectures,dynamic voltage and frequency scaling,DVFS,thread migration
Citation:
"Steep-Slope Devices: From Dark to Dim Silicon," IEEE Micro, vol. 33, no. 5, pp. 50-59, Sept.-Oct. 2013, doi:10.1109/MM.2013.75
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